Patricia J Norton

US Patent:

55500650, Aug 27, 1996

Filed:

Nov 25, 1994

Appl. No.:

8/344911

Inventors:

Majid M. Hashemi - Tempe AZ
Saied N. Tehrani - Scottsdale AZ
Patricia A. Norton - Mesa AZ

Assignee:

Motorola - Schaumburg IL

International Classification:

H01L 21265

US Classification:

437 39

Abstract:

A method of fabricating a self-aligned FET having a semi-insulating substrate of GaAs or InP with a conductive channel formed either by doping the surface or an epitaxially grown channel by molecular beam epitaxy or metalorganic vapor phase epitaxy in the substrate adjacent the surface. Forming a high temperature stable LaB. sub. 6 /TiWN "T-shaped" Schottky gate contact on the substrate surface, which is used for source and drain ohmic region implants into the substrate adjacent to the surface and self-aligned to the "T-shaped" gate, with source and drain ohmic contacts also self-aligned with respect to the gate.

US Patent:

55713742, Nov 5, 1996

Filed:

Oct 2, 1995

Appl. No.:

8/538064

Inventors:

Christine Thero - Scottsdale AZ
Patricia A. Norton - Mesa AZ

Assignee:

Motorola - Schaumburg IL

International Classification:

H01L 2100

US Classification:

1566431

Abstract:

A mask (12) is applied to a silicon carbide substrate (11) in order to etch the substrate (11). The material used for the mask (12) has a Mohs hardness factor greater than 4 in order to prevent sputtering material from the mask (12) onto the substrate (11). An oxygen and sulfur hexafluoride plasma is utilized to perform the etch.

US Patent:

59218380, Jul 13, 1999

Filed:

Dec 27, 1996

Appl. No.:

8/774820

Inventors:

Sung P. Pack - Tempe AZ
Patricia A. Norton - Mesa AZ
Robert F. Woodburn - Mesa AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01J 902

US Classification:

445 50

Abstract:

A method for protecting extraction electrodes (140) during processing of Spindt-tip field emitters (150, 155) includes the steps of: (i) depositing a parting layer (170) on the extraction electrodes (140) and in an interspace region (145) defined by the extraction electrodes (140), (ii) sharpening the Spindt-tip field emitters (150), (iii) depositing a layer (180) of emission-enhancing material on the sharpened field emitters (155) and on the parting layer (170), and (iv) removing the parting layer (170), thereby lifting off the emission-enhancing material from the extraction electrodes (140) and from the interspace region (145), but not from the sharpened field emitters (155).