Paul B Fleming

US Patent:

39551563, May 4, 1976

Filed:

Apr 29, 1974

Appl. No.:

5/465057

Inventors:

Paul Lawrence Fleming - Rockville MD

Assignee:

Communications Satellite Corporation (Comsat) - Washington DC

International Classification:

H01P 510
H01P 520

US Classification:

333 9

Abstract:

A planar microwave integrated circuit, including features of slot lines and coplanar lines, for use as a magic tee and a power divider.

US Patent:

39756904, Aug 17, 1976

Filed:

Sep 2, 1975

Appl. No.:

5/609657

Inventors:

Paul L. Fleming - Rockville MD

Assignee:

Communicatons Satellite Corporation (Comsat) - Washington DC

International Classification:

H03F 304

US Classification:

330 5

Abstract:

A planar transmission line comprising a Gunn effect semiconductor having an epitaxial portion as the propagating medium amplifies and switches r. f. signals and is not transit time limited in the direction of propagation. The spacing between the transmission line conductors and the dopant concentration of the Gunn effect semiconductor are selected to prevent the formation of domains and thereby prevent Gunn oscillations from occurring at E fields above the Gunn threshold.

US Patent:

41526589, May 1, 1979

Filed:

Feb 22, 1978

Appl. No.:

5/879928

Inventors:

Paul L. Fleming - Rockville MD
Henry E. Carlson - Glen Burnie MD

Assignee:

Communications Satellite Corporation - Washington DC

International Classification:

H03F 304

US Classification:

330 5

Abstract:

Undesirable odd mode oscillations in coplanar active medium propagation (AMP) devices are suppressed, and transmission of the desired even mode signal is enhanced by placing a planar resistance element beneath the substrate supporting the Gunn epitaxial layer.

US Patent:

43226957, Mar 30, 1982

Filed:

Dec 26, 1979

Appl. No.:

6/107111

Inventors:

Paul L. Fleming - Rockville MD
Thane Smith - Middletown MD

Assignee:

Communications Satellite Corporation - Washington DC

International Classification:

H01P 115

US Classification:

333104

Abstract:

The planar transmission line attenuator and switch is formed on a flat piece of semiconductor material. Transmission line metallic conductors are deposited on a flat surface of the semiconductor material, and at least one of the metallic conductors forms a Schottky barrier contact to this flat semiconductor surface. The gap between the metallic conductors defines a shunt current path through the semiconductor material. The semiconductor material at the surface in contact with the transmission line conductor must be conductive. By applying a bias voltage to the metallic conductor forming the Schottky barrier contact, the conductivity of the shunt path can be controlled by changing the depletion layer width across the Schottky barrier. A plurality of planar transmission line switches can be combined into multi-port networks, examples of which are cross-bar switching devices and. beta. element switching devices.