Paul J Timans

US Patent:

6717158, Apr 6, 2004

Filed:

Jan 6, 2000

Appl. No.:

09/478247

Inventors:

Arnon Gat - Palo Alto CA
Bob Bogart - Pacifica CA
Conor Patrick OCarroll - Sunneyvale CA
Paul Janis Timans - Mountain View CA
Shuen Chun Choy - San Francisco CA
Zion Koren - Cupertino CA
Chris Francis Bragg - Oakland CA

Assignee:

Mattson Technology, Inc. - Fremont CA

International Classification:

H01L 2100

US Classification:

2504922, 392416, 219411

Abstract:

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be either active sources of light energy or passive sources which reflect, refract or absorb light energy. For instance, in one embodiment, the tuning devices can comprise a lamp spaced from a focusing lens designed to focus determined amounts of light energy onto a particular location of a wafer being heated.

US Patent:

6835914, Dec 28, 2004

Filed:

Nov 5, 2002

Appl. No.:

10/288271

Inventors:

Paul Janis Timans - Mountain View CA

Assignee:

Mattson Technology, Inc. - Fremont CA

International Classification:

F27B 514

US Classification:

219390, 219405, 219411, 392416, 392418, 118724, 118 501, 501 50, 501 64, 428428

Abstract:

A method and apparatus for heating semiconductor wafers in thermal processing chambers. The apparatus includes a non-contact temperature measurement system that utilizes radiation sensing devices, such as pyrometers, to determine the temperature of the wafer during processing. The radiation sensing devices determine the temperature of the wafer by monitoring the amount of radiation being emitted by the wafer at a particular wavelength. In accordance with the present invention, a spectral filter is included in the apparatus for filtering light being emitted by lamps used to heat the wafer at the wavelength at which the radiation sensing devices operate. The spectral filter includes a light absorbing agent such as a rare earth element, an oxide of a rare earth element, a light absorbing dye, a metal, or a semiconductor material.

US Patent:

6849831, Feb 1, 2005

Filed:

Jul 30, 2002

Appl. No.:

10/209155

Inventors:

Paul J. Timans - Mountain View CA, US
Narasimha Acharya - San Jose CA, US

Assignee:

Mattson Technology, Inc. - Fremont CA

International Classification:

F22B 514

US Classification:

219390, 219405, 219411, 392416, 392418, 118724, 118 501, 438 5, 438486, 438166, 438928

Abstract:

Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

US Patent:

6951996, Oct 4, 2005

Filed:

Dec 29, 2003

Appl. No.:

10/747592

Inventors:

Paul J. Timans - Mountain View CA, US
Narasimha Acharya - San Jose CA, US

Assignee:

Mattson Technology, Inc. - Fremont CA

International Classification:

F27B005/14

US Classification:

219390, 2191216, 21912185, 219762, 392416, 392423, 438799, 438530, 438486, 438149, 1565832, 118724

Abstract:

Pulsed processing methods and systems for heating objects such as semiconductor substrates feature process control for multi-pulse processing of a single substrate, or single or multi-pulse processing of different substrates having different physical properties. Heat is applied a controllable way to the object during a background heating mode, thereby selectively heating the object to at least generally produce a temperature rise throughout the object during background heating. A first surface of the object is heated in a pulsed heating mode by subjecting it to at least a first pulse of energy. Background heating is controlled in timed relation to the first pulse. A first temperature response of the object to the first energy pulse may be sensed and used to establish at least a second set of pulse parameters for at least a second energy pulse to at least partially produce a target condition.

US Patent:

6970644, Nov 29, 2005

Filed:

Dec 21, 2000

Appl. No.:

09/747522

Inventors:

Zion Koren - Sunnyvale CA, US
Conor Patrick O'Carroll - Sunnyvale CA, US
Shuen Chun Choy - San Francisco CA, US
Paul Janis Timans - Mountain View CA, US
Rudy Santo Tomas Cardema - San Jose CA, US
James Tsuneo Taoka - San Jose CA, US
Arieh A. Strod - Cupertino CA, US

Assignee:

Mattson Technology, Inc. - Fremont CA

International Classification:

F26B003/30

US Classification:

392418, 392416, 219390, 219405, 219411, 2191216, 21912182, 118724, 118725, 501 50, 501 64, 428425

Abstract:

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

US Patent:

7015422, Mar 21, 2006

Filed:

Nov 7, 2001

Appl. No.:

10/040272

Inventors:

Paul Janis Timans - Mountain View CA, US

Assignee:

Mattson Technology, Inc. - Fremont CA

International Classification:

F27B 5/14

US Classification:

219370, 219390, 219405, 219411, 2191216, 21912174, 21912182, 21912166, 118724, 118725, 118 801, 392416, 392418

Abstract:

Various processes for heating semiconductor wafers is disclosed. In particular, the present invention is directed to configuring light sources emitting light energy onto a wafer in order to optimize absorption of the energy by the wafer. Optimization is carried out by varying the angle of incidence of the light energy contacting the wafer, using multiple wavelengths of light, and configuring the light energy such that it contacts the wafer in a particular polarized state. In one embodiment, the light energy can be emitted by a laser that is scanned over the surface of the wafer.

US Patent:

7045746, May 16, 2006

Filed:

Nov 12, 2003

Appl. No.:

10/706367

Inventors:

Daniel J. Devine - Los Gatos CA, US
Young Jai Lee - Sunnyvale CA, US
Paul J. Timans - Mountain View CA, US
Frank Allan Lema - San Jose CA, US

Assignee:

Mattson Technology, Inc. - Fremont CA

International Classification:

F27D 11/00

US Classification:

219411, 219390, 219405, 219416, 392416, 392418, 118724, 118725, 118 501

Abstract:

As part of a system for processing a workpiece by applying a controlled heat to the workpiece, a heating arrangement includes an array of spaced apart heating elements for use in a confronting relationship with the workpiece to subject the workpiece to a direct radiation that is produced. A radiation shield includes a plurality of members supported for movement between (i) retracted positions, which allow the direct radiation to reach the workpiece, and (ii) extended positions, in which the plurality of members cooperate in way which serves to at least partially block the direct radiation from reaching the workpiece and to absorb radiation emitted and reflected by the workpiece and thereby achieve greater control of the time-temperature profile than previously obtainable. At least certain ones of the members move between adjacent ones of the heating elements in moving those certain members between the retracted and extended positions. Tubular, curved and plate-like member configurations can be used.

US Patent:

7115837, Oct 3, 2006

Filed:

Jul 28, 2003

Appl. No.:

10/629400

Inventors:

Paul J. Timans - Mountain View CA, US
Daniel J. Devine - Los Gatos CA, US
Young Jai Lee - Sunnyvale CA, US
Yao Zhi Hu - San Jose CA, US
Peter C. Bordiga - Petaluma CA, US

Assignee:

Mattson Technology, Inc. - Fremont CA

International Classification:

F27B 5/14
F26B 19/00

US Classification:

219405, 219390, 219411, 2194431, 219543, 118724, 118725, 118 501, 118728, 392416, 392418

Abstract:

A customizable chamber spectral response is described which can be used at least to tailor chamber performance for wafer heating, wafer cooling, temperature measurement, and stray light. In one aspect, a system is described for processing a treatment object having a given emission spectrum at a treatment object temperature which causes the treatment object to produce a treatment object radiated energy. The chamber responds in a first way to the heating arrangement radiated energy and in a second way to the treatment object radiated energy that is incident thereon. The chamber may respond in the first way by reflecting the majority of the heat source radiated energy and in the second way by absorbing the majority of the treatment object radiated energy. Different portions of the chamber may be treated with selectively reflectivity based on design considerations to achieve objectives with respect to a particular chamber performance parameter.