Peng Zhang

age ~41

from New York, NY

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Peng Zhang Phones & Addresses

New York, NY
Prior Lake, MN
Tupelo, MS
Allston, MA
Fort Lee, NJ

Resumes

Peng Zhang Framingham, MA

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Work:

Olympus NDT

Jul 2012 to 2000
Test Systems Engineer AAC Technologies Holdings, Inc
San Jose, CA
Jul 2011 to Jun 2012
Senior acoustics engineer Medical Acoustics Lab
Boston, MA
Sep 2006 to Jun 2011
Research assistant Institute of Acoustics
Nanjing, CN
Sep 2003 to Jun 2006
Research assistant

Education:

Boston University
Boston, MA
2006 to 2011
Ph.D. in Mechanical Engineering with concentration in Acoustics/Ultrasonics Nanjing University
Nanjing, CN
2006
M. S. in Acoustics Nanjing University
Nanjing, CN
2003
B. S. in Acoustics

Skills:

Matlab, LabVIEW, C/C++, Microsoft Project, etc.

Peng Zhang Elmhurst, NY

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Work:

Thakur Digital

May 2014 to 2000
Photographer (part time) United Inc.
Manhattan, NY
Mar 2014 to Jul 2014
Cooperation Trainer (full time) Buffalo Used Furniture
Buffalo, NY
Jun 2013 to Feb 2014
Individual Founder (part time) Campus Dining & Shop
Buffalo, NY
Sep 2012 to Dec 2013
Campus Dining Attendant (part time) Social Democrats, USA
Washington, DC
Aug 2013 to Aug 2013
Volunteer Photographer Rich Rose Shoes Factory

Jan 2010 to Dec 2010
Production Manager (full time) Wan Shun Shoes Store

Jun 2009 to Dec 2009
Sales Representative (full time)

Education:

UNIVERSITY AT BUFFALO, THE STATE UNIVERSITY OF NEW YORK
Buffalo, NY
2011 to 2013
Bachelor of Science in Business Administration

Skills:

Microsoft Office Word, Excel, PowerPoint, Access, Photoshop, Photography, Marketing research and Marketing analysis, Organization and leadership, Social Media

Peng Zhang Malden, MA

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Work:

Cognitive Systems Laboratory at Northeastern University

Jan 2011 to 2000
Research Assistant HVAC Laboratory, Shandong University
Jinan, CN
Oct 2009 to Feb 2010
Research Assistant

Education:

Northeastern University
Boston, MA
May 2013
M.S. in Electrical Engineering Shandong University
Jinan, CN
Jun 2010
Bachelor of Science in Automation

Peng Zhang Norwalk, CT

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Work:

Dragon Gate Investment Partners
New York, NY
Dec 2012 to Apr 2013
Business Development Intern Executive-In-Residence Programs
New York, NY
Jan 2011 to May 2011
Business Consultant Industrial and Commercial Bank of China New York Branch
New York, NY
Jan 2010 to Feb 2010
Intern Industrial and Commercial Bank of China Guangzhou Branch
Guangzhou, CHINA
Jul 2005 to Dec 2008
Client Manager

Education:

St. John's University
Queens, NY
2009 to 2012
Master of Business Administration in Finance Hunan University of Commerce
Sep 2001 to Jun 2005
Bachelor in Finance

Skills:

Fluent in Mandarin(Chinese); Intermediate in Cantonese(Chinese); Familiar with Excel, Word, PowerPoint; Experienced in Fact Set & Bloomberg Research

Name / Title

Company / Classification

Phones & Addresses

Peng Zhang
M

U.S.A. Gangye Valve Group LLC

Us Patents

Process Solutions Containing Surfactants
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US Patent:

8227395, Jul 24, 2012
Filed:

Jul 29, 2010
Appl. No.:

12/846369
Inventors:

Peng Zhang - Hillsdale NJ, US
Danielle Megan King Curzi - San Francisco CA, US
Leslie Cox Barber - Cave Creek AZ, US
Assignee:

Air Products and Chemicals, Inc. - Allentown PA
International Classification:

C11D 1/00
US Classification:

510175, 510176, 134 13
Abstract:

Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

Ceramic Paddle
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US Patent:

20090214999, Aug 27, 2009
Filed:

Feb 20, 2009
Appl. No.:

12/389741
Inventors:

Scott A. Kaempfe - Brighton MA, US
Michael P. Kenney - Charlton MA, US
Karen A. Dwyer - Sterling MA, US
Peng Zhang - Northborough MA, US
Assignee:

SAINT-GOBAIN CERAMICS & PLASTICS, INC. - Worcester MA
International Classification:

F27D 3/12
F27D 5/00
US Classification:

432 11, 432253, 432239
Abstract:

A paddle for the production of semiconductor wafers is provided. The paddle can be a cantilever paddle made of a ceramic such as silicon carbide and can be used with round or square wafers, such as photovoltaic wafers. The paddle exhibits excellent deflection and strength characteristics.

Curable Formulations For Forming Low-K Dielectric Silicon-Containing Films Using Polycarbosilazane
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US Patent:

20230095074, Mar 30, 2023
Filed:

Oct 31, 2022
Appl. No.:

17/977619
Inventors:

- Paris, FR
- Fremont CA, US
Peng ZHANG - Montvale NJ, US
Fan QIN - Bear DE, US
Gennadiy ITOV - Flemington NJ, US
Fabrizio MARCHEGIANI - Wilmington DE, US
Thomas J. LARRABEE - Middletown DE, US
Venkateswara R. PALLEM - Hockessin DE, US
International Classification:

C09D 183/14
Abstract:

A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.

Si-Containing Film Forming Precursors And Methods Of Using The Same
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US Patent:

20210395890, Dec 23, 2021
Filed:

Aug 23, 2021
Appl. No.:

17/409229
Inventors:

- Paris, FR
Peng ZHANG - Montvale NJ, US
Antonio SANCHEZ - Tsukuba, JP
Manish KHANDELWAL - Somerset NJ, US
Gennadiy ITOV - Flemington NJ, US
Reno PESARESI - , US
Grigory NIKIFOROV - Easton PA, US
David ORBAN - Hampton NJ, US
International Classification:

C23C 16/455
H01L 21/02
C01B 21/088
C23C 16/515
C23C 16/40
C23C 16/34
C23C 16/30
C01B 21/087
C07F 7/02
Abstract:

Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formulawherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′]; further wherein each R′ of the [SiR′] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C-Csaturated or unsaturated hydrocarbyl group, a C-Csaturated or unsaturated alkoxy group, or an amino group [—NRR] with each Rand Rbeing further selected from H or a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d≠0; or d=0, c≠0.

Si-Containing Film Forming Precursors And Methods Of Using The Same
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US Patent:

20210225635, Jul 22, 2021
Filed:

Mar 10, 2021
Appl. No.:

17/197895
Inventors:

- Paris, FR
Peng ZHANG - Montvale NJ, US
Antonio SANCHEZ - Tsukuba, JP
Manish KHANDELWAL - Somerset NJ, US
Gennadiy ITOV - Flemington NJ, US
Reno PESARESI - Easton NJ, US
International Classification:

H01L 21/02
C07F 7/02
C01B 21/087
C01B 21/088
C23C 16/30
C23C 16/34
C23C 16/40
C23C 16/455
C23C 16/515
Abstract:

Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

Si-Containing Film Forming Precursors And Methods Of Using The Same
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US Patent:

20190362961, Nov 28, 2019
Filed:

Jul 16, 2019
Appl. No.:

16/513307
Inventors:

- Paris, FR
Peng ZHANG - Montvale NJ, US
Antonio SANCHEZ - Tsukuba, JP
Manish KHANDELWAL - Somerset NJ, US
Gennadiu ITOV - Flemington NJ, US
Reno PESARESI - Easton NJ, US
International Classification:

H01L 21/02
C01B 21/088
C23C 16/455
C23C 16/515
C07F 7/02
C23C 16/40
C23C 16/34
C23C 16/30
C01B 21/087
Abstract:

Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH)N—SiH—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C-Csaturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Si-Containing Film Forming Precursors And Methods Of Using The Same
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US Patent:

20190311894, Oct 10, 2019
Filed:

Jun 21, 2019
Appl. No.:

16/449070
Inventors:

- Paris, FR
Peng Zhang - Montvale NJ, US
Antonio Sanchez - Tsukuba, JP
Manish Khandelwal - Somerset NJ, US
Gennadiy Itov - Flemington NJ, US
Reno Pesaresi - Easton PA, US
Grigory Nikiforov - Bridgewater NJ, US
David Orban - Hampton NJ, US
International Classification:

H01L 21/02
C01B 21/088
C23C 16/455
C23C 16/515
C07F 7/02
C23C 16/40
C23C 16/34
C23C 16/30
C01B 21/087
Abstract:

Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formulawherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′]; further wherein each R′ of the [SiR′] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C-Csaturated or unsaturated hydrocarbyl group, a C-Csaturated or unsaturated alkoxy group, or an amino group [—NRR] with each Rand Rbeing further selected from H or a C-Clinear or branched, saturated or unsaturated hydrocarbyl group.

Si-Containing Film Forming Compositions And Methods Of Making And Using The Same
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US Patent:

20190040279, Feb 7, 2019
Filed:

Mar 23, 2017
Appl. No.:

16/087464
Inventors:

- Fremont CA, US
- Paris, FR
Jean-Marc GIRARD - Versailles, FR
Antonio SANCHEZ - Tsukuba, JP
Peng ZHANG - Montvale NJ, US
Yang WANG - Garnet Valley PA, US
International Classification:

C09D 183/16
C08G 77/62
C07F 7/10
Abstract:

Si-containing film forming compositions are disclosed comprising a precursor having the formula [—NR—RRSi—(CH)—SiRR—]wherein n=2 to 400; R, R, R, R, and Rare independently H, a hydrocarbon group, or an alkylamino group, and provided that at least one of R, R, R, and Ris H; and R is independently H, a hydrocarbon group, or a silyl group. Exemplary precursors include, but are not limited to, [—NH—SiH—CH—SiH—], and [—N(SiH—CH—SiH)—SiH—CH—SiH—].

News

Weaponizing Oxygen to Kill Infections and Disease

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An Alternative to AntibioticsInstead of resorting to antibiotics, which no longer work against some bacteria like MRSA, we use photosensitizers, mostly dye molecules, that become excited when illuminated with light, Peng Zhang, Ph.D., says. Then, the photosensitizers convert oxygen into reactive
Date: Aug 20, 2018
Category: Headlines
Source: Google

Weaponizing oxygen to kill infections and disease

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"Instead of resorting to antibiotics, which no longer work against some bacteria like MRSA, we use photosensitizers, mostly dye molecules, that become excited when illuminated with light," Peng Zhang, Ph.D., says. "Then, the photosensitizers convert oxygen into reactive oxygen species that attack th
Date: Aug 19, 2018
Category: Headlines
Source: Google

Scientists 'bottle up' sound waves

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"Our technique offers a new degree of freedom for controlling the flow of acoustic energy at will," explained Peng Zhang, lead researcher from US Department of Energy (DOE)'s Lawrence Berkeley National Laboratory (Berkeley Lab).
Date: Aug 05, 2014
Category: Sci/Tech
Source: Google

A Clock that Will Last Forever

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ngineering Center, is the corresponding author of a paper describing this work in Physical Review Letters (PRL). The paper is titled Space-time crystals of trapped ions. Co-authoring this paper were Tongcang Li, Zhe-Xuan Gong, Zhang-Qi Yin, Haitao Quan, Xiaobo Yin, Peng Zhang and Luming Duan.
Date: Sep 25, 2012
Category: Sci/Tech
Source: Google

A clock that will last forever: Researchers propose a way to build the first ...

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and Engineering Center, is the corresponding author of a paper describing this work in Physical Review Letters (PRL). The paper is titled "Space-time crystals of trapped ions." Co-authoring this paper were Tongcang Li, Zhe-Xuan Gong, Zhang-Qi Yin, Haitao Quan, Xiaobo Yin, Peng Zhang and Luming Duan.Peng Zhang, another co-author and member of Zhang's research group, notes that a space-time crystal might also be used to store and transfer quantum information across different rotational states in both space and time. Space-time crystals may also find analogues in other physical systems beyond tra
Date: Sep 24, 2012
Category: Sci/Tech
Source: Google