Peng Zhang

US Patent:

20120028870, Feb 2, 2012

Filed:

Feb 19, 2010

Appl. No.:

12/709054

Inventors:

Jeffrey A. Barnes - Bethlehem CT, US
Jun Liu - Brookfield CT, US
Peng Zhang - Montvale NJ, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

C11D 3/04
B65D 69/00

US Classification:

510175, 206223

Abstract:

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

US Patent:

20120283163, Nov 8, 2012

Filed:

Oct 20, 2009

Appl. No.:

13/124942

Inventors:

Jeffrey A. Barnes - Bethlehem CT, US
Brian Benac - Marble Falls TX, US
Karl E. Boggs - Hopewell Junction NY, US
Lin Feng - Orange CT, US
Jun Liu - Brookfield CT, US
Melissa A. Petruska - Newtown CT, US
Xiaodong Yan - New Milford CT, US
Peng Zhang - Montvale NJ, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

C11D 7/60

US Classification:

510175

Abstract:

A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

US Patent:

20130280123, Oct 24, 2013

Filed:

Aug 26, 2011

Appl. No.:

13/819249

Inventors:

Tianniu Chen - Rocky Hill CT, US
Steven Bilodeau - Oxford CT, US
Chimin Sheu - Hsin Chu, TW
Mutsumi Nakanishi - Kyoto, JP
Masahiro Matsuoka - Kyoto, JP
Fumio Nakayama - San Jose CA, US
Peng Zhang - Montvale NJ, US
Michael B. Korzenski - Danbury CT, US
Emanuel I. Cooper - Scarsdale NY, US
Kate Veccharelli - Danbury CT, US
Makonnen Payne - San Jose CA, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

C09C 3/08

US Classification:

422 1, 252380

Abstract:

Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.

US Patent:

20130296214, Nov 7, 2013

Filed:

Jul 15, 2011

Appl. No.:

13/810060

Inventors:

Jeffrey A. Barnes - Bethlehem CT, US
Steven Lippy - Danbury CT, US
Peng Zhang - Montvale NJ, US
Rekha Rajaram - White Plains NY, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

G03F 7/42

US Classification:

510176

Abstract:

Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

US Patent:

20140038420, Feb 6, 2014

Filed:

Oct 6, 2011

Appl. No.:

13/877777

Inventors:

Tianniu Chen - Rocky Hill CT, US
Nicole E. Thomas - Marlborough MA, US
Steven Lippy - Brookfield CT, US
Jeffrey A. Barnes - Bethlehem CT, US
Emanuel I. Cooper - Scarsdale NY, US
Peng Zhang - Montvale NJ, US

Assignee:

ADVANCED TECHNOLOGY MATERIALS, INC. - Danbury CT

International Classification:

H01L 21/8238
H01L 21/28

US Classification:

438754

Abstract:

A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.