Peter Daniel Buck

US Patent:

6596444, Jul 22, 2003

Filed:

May 10, 2001

Appl. No.:

09/854284

Inventors:

Peter Buck - Aloha OR

Assignee:

DuPont Photomasks, Inc. - Round Rock TX

International Classification:

G03F 700

US Classification:

430 5, 430 30, 716 19, 716 20, 716 21

Abstract:

A method for correcting pattern errors on a photomask is disclosed. The method includes determining a proximity effect caused by a first feature on a second feature in a pattern data file. The total line edge length is calculated for the first feature and a dimension of the second feature is modified based on the total line edge length calculated or the first feature.

US Patent:

6924071, Aug 2, 2005

Filed:

Nov 28, 2001

Appl. No.:

09/996333

Inventors:

Peter Buck - Aloha OR, US

Assignee:

Toppan Photomasks, Inc. - Round Rock TX

International Classification:

G03F009/00

US Classification:

430 30, 430 5, 430 22

Abstract:

A method for reducing exposure times for high density patterns on a photomask is disclosed. The method includes moving a selected feature located in a cell between a first boundary and a second boundary from a first pattern file to a second pattern file and exposing a resist layer of a photomask blank with the first pattern file by using a step and repeat technique.

US Patent:

20080241709, Oct 2, 2008

Filed:

Apr 2, 2007

Appl. No.:

11/695416

Inventors:

Kent Nakagawa - Beaverton OR, US
Peter Buck - Aloha OR, US

International Classification:

G03F 1/14

US Classification:

430 5, 716 19

Abstract:

In one embodiment, a method for analyzing photomask geometries is provided. An original geometry to be formed in an absorber layer of a photomask blank is received. The original geometry may be modified to generate a modified geometry that is offset from the original geometry. A simulation may be performed based on the modified geometry to determine a simulated geometry, wherein the simulated geometry is a simulated prediction of a geometry that would be written into a resist layer of the photomask blank if the modified geometry was used as input for imaging the resist layer. The simulated geometry may then be modified to determine a predicted original geometry, wherein the predicted original geometry is a prediction of a geometry that would be formed in the absorber layer of the photomask blank if an etch process was performed on an area of the absorber layer defined by the simulated geometry.

US Patent:

20100086212, Apr 8, 2010

Filed:

Jan 29, 2007

Appl. No.:

12/524668

Inventors:

Peter Daniel Buck - Aloha OR, US
Richard Walter Gladhill - Portland OR, US
Roy Eric Staveley - Austin TX, US
Joseph Adam Straub - Round Rock TX, US
Craig Alan West - Austin TX, US

International Classification:

G06K 9/46

US Classification:

382195

Abstract:

A method and system for dispositioning defects in a photomask are provided. A method for dispositioning defects in a photomask includes analyzing photomask topography data including data representing a design topology of at least a first photomask, the first photomask corresponding to a first layer in a photolithographic process. Based at least on the analysis, one or more safe regions of the first photomask are identified, each safe region corresponding to a region of the first layer insensitive to potential defects located in the first photomask.

US Patent:

20100100349, Apr 22, 2010

Filed:

Dec 22, 2009

Appl. No.:

12/644631

Inventors:

Peter Daniel Buck - Aloha OR, US
Richard Walter Gladhill - Portland OR, US

International Classification:

G06F 19/00

US Classification:

702 81

Abstract:

A method and system for inspecting a photomask are provided. A method for automatically generating do-not-inspect regions in a photomask includes performing one or more manufacturing rules checks (MRCs) on a mask pattern file. The method may also include identifying manufacturing rule violations and automatically generating one or more DNIRs, each DNIR corresponding to a location of one or more of the identified manufacturing rule violations.