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Peter M Mcgrath

age ~79

from North Las Vegas, NV

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Also known as:
  • Peter A Mcgrath
  • Peter E Mcgrath
  • Peter M Mc
  • Peter Mc Grath
  • Pete Mcgrath
  • Pete Mcgraft
Related to:
Connected to:

Peter Mcgrath Phones & Addresses

  • North Las Vegas, NV
  • 31770 Alvarado Blvd APT 121, Union City, CA 94587 • (650)8682356
  • Pasadena, CA
  • Redwood City, CA
  • Vancouver, WA
  • Palo Alto, CA
  • San Carlos, CA
  • 31770 Alvarado Blvd APT 121, Union City, CA 94587

Work

  • Company:
    Peter R McGrath, P.A.
  • Address:
    801 North Magnolia Avenue, Orlando
  • Phones:
    (407)8727010

Education

  • School / High School:
    Milwaukee Area Technical College
    1984
  • Specialities:
    Journeyman in Electrician

Medicine Doctors

Peter Mcgrath Photo 1

Peter Williamson McGrath

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Specialties:
Internal Medicine
Cardiovascular Disease
Cardiology
Nuclear Medicine
Education:
University of Washington (1983)

Lawyers & Attorneys

Peter Mcgrath Photo 2

Peter Mcgrath - Lawyer

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Office:
Peter R. McGrath, P.A.
Specialties:
Real Estate Litigation
Condominium Law
Homeowners Association Law
Landlord and Tenant Law
Eminent Domain
Construction Defects
Corporate & Incorporation
Commercial Litigation
Collections
Construction Litigation
Construction Law
Creditors Rights
Construction Liens
Real Estate
Real Estate Contracts
ISLN:
904967348
Admitted:
1988
University:
Michigan State University, B.A., 1985
Law School:
Wake Forest University School of Law, J.D., 1988
Peter Mcgrath Photo 3

Peter Mcgrath - Lawyer

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Specialties:
Criminal
ISLN:
922122393
Admitted:
1990
University:
University of Sydney, B.A.
Law School:
University of Sydney, LL.B.
Peter Mcgrath Photo 4

Peter Mcgrath - Lawyer

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ISLN:
904967362
Admitted:
1953
University:
DePaul University, B.S.
Law School:
DePaul University, J.D.
Name / Title
Company / Classification
Phones & Addresses
Mr. Peter McGrath
General Manager
Mr Rooter Plumbing
Mister Rooter
Plumbing - Contractor. Plumbing - Renovation & Repair. Plumbing Drains & Sewer Cleaning
3900 Russell Road, Ottawa, ON K1G 3N2
(613)7460000, (613)7468012
Mr. Peter McGrath
General Manager
Mr Rooter Plumbing of Ottawa
Mister Rooter
Plumbing - Contractor. Plumbing Drains & Sewer Cleaning. Plumbing - Renovation & Repair
3900 Russell Road, Ottawa, ON K1G 3N2
(613)7460000, (613)7468012
Peter Mcgrath
President
SUPPORTERS OF SENIOR SERVICES IN BURBANK
Services-Misc
1301 W Olive Ave, Burbank, CA 91506
275 E Olive Ave, Burbank, CA 91502
1301 W Olive Ave Joslyn Adult Ctr, Burbank, CA 91505
Peter Mcgrath
President
BURBANK HOUSING CORPORATION
Apartment Building Operator
1819 Grismer Ave, Burbank, CA 91504
(818)5592336
Peter R. Mcgrath
President
SUPPORTING NETWORK
944 Eagle Ave UNIT A, Alameda, CA 94501
2 Embarcadero Ctr, San Francisco, CA 94111
735 Sapphire St, Redwood City, CA 94061
Peter R. Mcgrath
Unresolved
My Dutch Uncle
Nonprofit Organization Management · Membership Organization
50 Osgood Pl SUITE 500, San Francisco, CA 94133
617 Front St, San Francisco, CA 94111
61 Broadway, New York, NY 10006
(415)6841670
Peter Mcgrath
General Manager
Mr Rooter Plumbing of Ottawa
Plumbing - Contractor · Plumbing Drains & Sewer Cleaning · Plumbing - Renovation & Repair
(613)7460000, (613)7468012
Peter L Mcgrath
FRIESLAND (U.S.A.), INC

Us Patents

  • Techniques For Improving Etching In A Plasma Processing Chamber

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  • US Patent:
    6410451, Jun 25, 2002
  • Filed:
    Sep 27, 1999
  • Appl. No.:
    09/405949
  • Inventors:
    Thomas D. Nguyen - Campbell CA
    George Mueller - San Jose CA
    Peter McGrath - Roseville CA
  • Assignee:
    Lam Research Corporation - Fremont CA
  • International Classification:
    H01L 21302
  • US Classification:
    438713, 438714, 438743, 438744, 438723, 438724, 438624
  • Abstract:
    Improved methods and apparatus for chemically assisted etch processing in a plasma processing system are disclosed. In accordance with one aspect of the invention, improved techniques suitable for performing an etch process in the plasma processing can be realized. The invention operates to reduce the critical dimension bias that is associated with the etch process. Lower critical dimension bias provides many benefits. One such benefit is that features with higher aspect ratio can be etched correctly. In addition, several other undesired effects, e. g. , micro loading, bowing and passivation, can be curtailed using the techniques of the present invention.

  • Method For Preventing Borderless Contact To Well Leakage

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  • US Patent:
    6551901, Apr 22, 2003
  • Filed:
    Nov 30, 2001
  • Appl. No.:
    10/006540
  • Inventors:
    Shiqun Gu - Vancouver WA
    Derryl J. Allman - Camas WA
    Peter McGrath - Portland OR
  • Assignee:
    LSI Logic Corporation - Milpitas CA
  • International Classification:
    H01L 2176
  • US Classification:
    438424, 438618, 438675, 438740, 438763
  • Abstract:
    An inventive semiconductor chip is provided. Generally, shallow trenches containing field oxide are provided on a substrate. At least one semiconductor device is formed between the shallow trenches. An oxide layer is formed over the at least one semiconductor device and the field oxide. An etch stop layer is formed over the oxide layer. An inter layer dielectric layer is formed over the etch stop layer. At least one contact hole is etched through the inter layer dielectric layer, the etch stop layer and at least partially through the oxide layer. The contact hole is filled with a conductive material.

  • Method Of Reducing Process Plasma Damage Using Optical Spectroscopy

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  • US Patent:
    6673200, Jan 6, 2004
  • Filed:
    Jul 12, 2002
  • Appl. No.:
    10/195775
  • Inventors:
    Shiqun Gu - Vancouver WA
    Peter Gerard McGrath - Portland OR
    Ryan Tadashi Fujimoto - Gresham OR
  • Assignee:
    LSI Logic Corporation - Milpitas CA
  • International Classification:
    H01L 2100
  • US Classification:
    156626, 156552
  • Abstract:
    Optical emission spectra from a test wafer during a plasma process are measured using a spectrometer. The plasma charging voltage retained by (detected by) the test wafer is measured after the process step is completed. The emission spectra are correlated with the plasma charging voltage to identify the species contributing to the plasma charging voltage. The optical emission spectra are monitored in real time to optimize the plasma process to prevent plasma charging damage. The optical emission spectra are also monitored to control the plasma process drift.

  • Method Of Reducing Leakage Using Si3N4 Or Sion Block Dielectric Films

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  • US Patent:
    6743669, Jun 1, 2004
  • Filed:
    Jun 5, 2002
  • Appl. No.:
    10/164227
  • Inventors:
    Hong Lin - Vancouver WA
    Shiqun Gu - Vancouver WA
    Peter McGrath - Portland OR
  • Assignee:
    LSI Logic Corporation - Milpitas CA
  • International Classification:
    H01L 218234
  • US Classification:
    438238, 438210, 438382
  • Abstract:
    A dielectric film block is used in semiconductor processing to protect selected areas of the wafer from silicidation. The selected areas may include resistors. A first layer of oxide is formed on the resistor and a second layer comprising SiON or Si N is disposed on the oxide. A mask is patterned to allow etching to take place in the areas where silicide formation is desired. The oxide layer serves as an etch stop layer during etching of the second layer.

  • Method And Apparatus For Reducing Microtrenching For Borderless Vias Created In A Dual Damascene Process

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  • US Patent:
    6794304, Sep 21, 2004
  • Filed:
    Jul 31, 2003
  • Appl. No.:
    10/631528
  • Inventors:
    Shiqun Gu - Vancouver WA
    Masaichi Eda - Gresham OR
    Peter McGrath - Portland OR
    Hong Lin - Vancouver WA
    Jim Elmer - Vancouver WA
  • Assignee:
    LSI Logic Corporation - Milpitas CA
  • International Classification:
    H01L 21302
  • US Classification:
    438740, 438742, 438754
  • Abstract:
    A method of making a semiconductor device includes providing a first element formed of a first substantially electrically conductive material and having an upper surface. A second element adjacent to the first element is provided. The second element is formed of a first substantially non-electrically conductive material. An upper surface of the second element slopes downwardly toward the upper surface of the first element. A first layer of a second substantially non-electrically conductive material is disposed over the upper surface of the first element and the upper surface of the second element. The first layer has a thickness in the vertical direction that is greater in an area over the downward slope of the second element than in an area over the first element. An etching process is performed such that the layer is perforated above the upper surface of the first element and imperforated in the vertically thicker area above the downwardly sloping upper surface of the second element.

  • Method For Preventing Borderless Contact To Well Leakage

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  • US Patent:
    6893937, May 17, 2005
  • Filed:
    Feb 5, 2003
  • Appl. No.:
    10/360746
  • Inventors:
    Shiqun Gu - Vancouver WA, US
    Derryl J. Allman - Camas WA, US
    Peter McGrath - Portland OR, US
  • Assignee:
    LSI Logic Corporation - Milpitas CA
  • International Classification:
    H01L021/76
  • US Classification:
    438424, 438618, 438675, 438740
  • Abstract:
    An inventive semiconductor chip is provided. Generally, shallow trenches containing field oxide are provided on a substrate. At least one semiconductor device is formed between the shallow trenches. An oxide layer is formed over the at least one semiconductor device and the field oxide. An etch stop layer is formed over the oxide layer. An inter layer dielectric layer is formed over the etch stop layer. At least one contact hole is etched through the inter layer dielectric layer, the etch stop layer and at least partially through the oxide layer. The contact hole is filled with a conductive material.

  • Method Of Reducing Process Plasma Damage Using Optical Spectroscopy

    view source
  • US Patent:
    6972840, Dec 6, 2005
  • Filed:
    Oct 6, 2003
  • Appl. No.:
    10/680503
  • Inventors:
    Shiqun Gu - Vancouver WA, US
    Peter Gerard McGrath - Portland OR, US
    Ryan Tadashi Fujimoto - Gresham OR, US
  • Assignee:
    LSI Logic Corporation - Milpitas CA
  • International Classification:
    G01N021/00
  • US Classification:
    356337, 356342, 257 48, 257 80, 257 98
  • Abstract:
    Optical emission spectra from a test wafer during a plasma process are measured using a spectrometer. The plasma charging voltage retained by (detected by) the test wafer is measured after the process step is completed. The emission spectra are correlated with the plasma charging voltage to identify the species contributing to the plasma charging voltage. The optical emission spectra are monitored in real time to optimize the plasma process to prevent plasma charging damage. The optical emission spectra are also monitored to control the plasma process drift.

  • Semiconductor Chip With Borderless Contact That Avoids Well Leakage

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  • US Patent:
    7098515, Aug 29, 2006
  • Filed:
    Apr 11, 2005
  • Appl. No.:
    11/104050
  • Inventors:
    Shioun Gu - Vancouver WA, US
    Derryl J. Allman - Camas WA, US
    Peter McGrath - Portland OR, US
  • Assignee:
    LSI Logic Corporation - Milpitas CA
  • International Classification:
    H01L 23/52
  • US Classification:
    257397, 257513, 257637, 257774
  • Abstract:
    An inventive semiconductor chip is provided. Generally, shallow trenches containing field oxide are provided on a substrate. At least one semiconductor device is formed between the shallow trenches. An oxide layer is formed over the at least one semiconductor device and the field oxide. An etch stop layer is formed over the oxide layer. An inter layer dielectric layer is formed over the etch stop layer. At least one contact hole is etched through the inter layer dielectric layer, the etch stop layer and at least partially through the oxide layer. The contact hole is filled with a conductive material.

Resumes

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Peter Mcgrath

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Peter Mcgrath Photo 6

Peter Mcgrath

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Peter Mcgrath

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Peter Mcgrath

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Peter Mcgrath

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Peter Mcgrath

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Location:
United States
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Peter Mcgrath

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Location:
United States
Peter Mcgrath Photo 12

Peter Mcgrath Milwaukee, WI

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Work:
DYNCORP INTERNATIONAL

Oct 2011 to Oct 2012
Electrical Foreman/Department Lead Bechtel Construction
Oak Creek, WI
Apr 2008 to Feb 2010
Wire-Pull Foreman Isla Verde Enterprises
San Jose, CA
May 2006 to Mar 2008
Owner IBEW
Milwaukee, WI
Jun 1992 to Jul 2005
Journeyman Wireman, Local Union 494 IBEW
Port Washington, WI
Aug 2003 to May 2005
Lead General Foreman
Education:
Milwaukee Area Technical College
1984
Journeyman in Electrician

Youtube

Introducing The Wilson Alexia V Loudspeaker |...

Introducing The Wilson Alexia V Loudspeaker | Pete...

Please excuse the sometimes compressed and discolored footage. A bad m...

  • Duration:
    10m 47s

Conversation with a Master: Peter McGrath Par...

Conversation with a Master: Peter McGrath Part 1

We are honored and delighted to speak with Peter McGrath, a recording ...

  • Duration:
    18m 24s

Conversation with a Master: Peter McGrath Par...

Conversation with a Master: Peter McGrath Part 4

We are honored and delighted to speak with Peter McGrath, a recording ...

  • Duration:
    26m 47s

Dialing in my Alexia V Loudspeakers... | W/ P...

Dialing in my Alexia V Loudspeakers... | W/ Peter ...

Lee Scoggins had the pleasure of hosting Wilson Audio's Peter McGrath ...

  • Duration:
    18m 55s

Peter McGrath, Calculus of Variations and the...

Peter McGrath, Calculus of Variations and the Bend...

Beginning with the solution of the classical Plateau problemthe proble...

  • Duration:
    58m 12s

Conversation with a Master: Peter McGrath Par...

Conversation with a Master: Peter McGrath Part 3

We are honored and delighted to speak with Peter McGrath, a recording ...

  • Duration:
    6m 14s

Myspace

Peter Mcgrath Photo 13

Peter McGrath

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Locality:
Wang, New South Wales
Gender:
Male
Birthday:
1949
Peter Mcgrath Photo 14

Peter McGrath

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Locality:
WATERFORD, Ireland
Gender:
Male
Birthday:
1942
Peter Mcgrath Photo 15

peter mcgrath

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Locality:
Newcastle/washington, United Kingdom
Gender:
Male
Birthday:
1949
Peter Mcgrath Photo 16

Peter McGrath

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Locality:
Brum, Midlands
Gender:
Male
Birthday:
1952
Peter Mcgrath Photo 17

Peter McGrath

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Locality:
Lakewood, Colorado
Gender:
Male
Birthday:
1939

Flickr

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Facebook

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Peter McGrath

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Peter Mcgrath

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Peter Mcgrath Photo 28

Peter Mcgrath

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Peter Mcgrath Photo 29

Peter McGrath

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Peter Mcgrath

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Peter Mcgrath Photo 31

Peter McGrath

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Peter Mcgrath Photo 32

Peter J. McGrath

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Peter Mcgrath

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Googleplus

Peter Mcgrath Photo 34

Peter Mcgrath

Work:
McGrath Law Firm
Education:
Vermont Law School
About:
If you or someone you know has been exposed to or contracted hepatitis C from Exeter Hospital, you may be entitled tocompensation. According to New Hampshire law, non-economic and pain and suffering d...
Tagline:
SPECIAL EXETER, NH MEDICAL ALERT **** IF YOU, OR SOMEONE YOU KNOW, HAVE RECEIVED ANY NOTIFICATION FROM EXETER HOSPITAL THAT YOU NEED TO BE TESTED FOR HEPATITUS-C AS A RESULT OF MEDICAL TREATMENT, YOU MAY BE ENTITLED TO COMPENSATION! CONTACT THE MCGRATH LAW FIRM TODAY TO LEARN ABOUT YOUR RIGHTS! (603)224-7111 or (800) 283-1380
Bragging Rights:
Attorney McGrath is a New Hampshire native and founding member of the firm, who concentrates his practice in the areas of complex injury law, family law, environmental law, real estate law, and general litigation matters especially in Exeter, NH and the surrounding hospitals. Attorney McGrath combines a unique and expansive background of litigation experience, both from the prosecutorial side and from the private sector. As a federal prosecutor with the United States Department of Justice, Attorney McGrath was the lead prosecutor for the government in several major federal cases, including several in New Hampshire. During his tenure with the Justice Department, Attorney McGrath served as a Special Assistant United States Attorney in several federal districts, handled numerous jury trials, and directed various complex investigations. Since 1992, Attorney McGrath has been in the private practice of law focusing on family law, personal injury, medical malpractice, business counseling, and real estate law. Attorney McGrath received a master's degree in environmental law (MSL), magna cum laude, and his Juris Doctor, cum laude, from Vermont Law School, and he was a note editor of the Vermont Law Review. He is admitted to practice law in the State of New Hampshire and the United States Supreme Court Bar. Attorney McGrath serves as a Member of the American Bar Association, NH Bar Association, Rotary Club of Concord, BNI Partners for Success, and NH Association for Justice. He has been a speaker at environmental seminars and other seminars involving real estate issues and the rights of landlords and tenants.
Peter Mcgrath Photo 35

Peter Mcgrath

Education:
Cockshut Hill - A-Level
Peter Mcgrath Photo 36

Peter Mcgrath

Work:
Inxpress
Peter Mcgrath Photo 37

Peter Mcgrath

Peter Mcgrath Photo 38

Peter Mcgrath

Peter Mcgrath Photo 39

Peter Mcgrath

Peter Mcgrath Photo 40

Peter Mcgrath

Peter Mcgrath Photo 41

Peter Mcgrath

Classmates

Peter Mcgrath Photo 42

Peter McGrath

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Schools:
Georgian College Retrain Barrie Morocco 1979-1983
Community:
Kim Havill, Walter Zimmermann, Ron Marchildon, Nancy Wilkes
Peter Mcgrath Photo 43

Peter McGrath

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Schools:
King's Edgehill High School Windsor Swaziland 1988-1992
Community:
Robert Martin, Stephen Law
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Peter McGrath

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Schools:
Joliet Township High School Joliet IL 1992-1996
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Peter McGrath

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Schools:
Taipei American School Taipei GA 1957-1960, McLean High School Mclean VA 1963-1964
Community:
Katherine Ledford
Peter Mcgrath Photo 46

Peter McGrath, Providence...

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Peter McGrath 1965 graduate of Hope High School in Providence, RI
Peter Mcgrath Photo 47

Peter McGrath, St. George...

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Peter Mcgrath Photo 48

St. George's College, Tor...

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Graduates:
Peter McGrath (1996-2000),
Steve Wesley (1967-1971),
Peter Bromley (1964-1975)
Get Report for Peter M Mcgrath from North Las Vegas, NV, age ~79
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