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Peter M Sheldon

age ~68

from Lakewood, CO

Also known as:
  • Sarah Sheldon
  • Catherine Sheldon
  • Allison Sheldon
  • Sheldon Peter
Phone and address:
14210 Evans Ave, Denver, CO 80228
(303)9806308

Peter Sheldon Phones & Addresses

  • 14210 Evans Ave, Lakewood, CO 80228 • (303)9806308 • (303)9853367
  • 2510 Deframe St, Lakewood, CO 80228 • (303)9853367
  • 14210 W Evans Cir, Denver, CO 80228 • (303)9853367
  • Golden, CO
  • New York, NY
  • White River Junction, VT
  • Atlanta, GA
  • Golden, CO
  • Jefferson, CO

Isbn (Books And Publications)

The American Express Pocket Guide to Greece

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Author
Peter Sheldon

ISBN #
0130250406

The American Express Pocket Guide to Greece

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Author
Peter Sheldon

ISBN #
0671453734

Name / Title
Company / Classification
Phones & Addresses
Peter Sheldon
PETER SHELDON, LTD
351 E 58 St 2F, New York, NY 10022

Us Patents

  • Screening Of Silicon Wafers Used In Photovoltaics

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  • US Patent:
    8006566, Aug 30, 2011
  • Filed:
    Jul 28, 2006
  • Appl. No.:
    11/722981
  • Inventors:
    Bhushan L. Sopori - Denver CO, US
    Peter Sheldon - Lakewood CO, US
  • Assignee:
    Alliance for Sustainable Energy, LLC - Golden CO
  • International Classification:
    G01L 1/24
  • US Classification:
    73800, 73760, 73777, 438 14
  • Abstract:
    A method for screening silicon-based wafers used in the photovoltaic industry is provided herewith.
  • Process For Selectively Patterning Epitaxial Film Growth On A Semiconductor Substrate

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  • US Patent:
    46145648, Sep 30, 1986
  • Filed:
    Dec 4, 1984
  • Appl. No.:
    6/678202
  • Inventors:
    Peter Sheldon - Golden CO
    Russell E. Hayes - Boulder CO
  • Assignee:
    The United States of America as represented by the United States
    Department of Energy - Washington DC
  • International Classification:
    C03B 2300
    H01L 21205
    H01L 21365
    H01L 21306
  • US Classification:
    156657
  • Abstract:
    A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.
  • Photovoltaic Devices Comprising Zinc Stannate Buffer Layer And Method For Making

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  • US Patent:
    61692468, Jan 2, 2001
  • Filed:
    Sep 8, 1998
  • Appl. No.:
    9/149430
  • Inventors:
    Xuanzhi Wu - Golden CO
    Peter Sheldon - Lakewood CO
    Timothy J. Coutts - Lakewood CO
  • Assignee:
    Midwest Research Institute - Kansas City MO
  • International Classification:
    H01L 3100
  • US Classification:
    136265
  • Abstract:
    A photovoltaic device has a buffer layer zinc stannate Zn. sub. 2 SnO. sub. 4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.
  • System For Monitoring The Growth Of Crystalline Films On Stationary Substrates

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  • US Patent:
    54562058, Oct 10, 1995
  • Filed:
    Jun 1, 1993
  • Appl. No.:
    8/069405
  • Inventors:
    Peter Sheldon - Lakewood CO
  • Assignee:
    Midwest Research Institute - Kansas City MO
  • International Classification:
    C30B 2516
  • US Classification:
    117 85
  • Abstract:
    A system for monitoring the growth of crystalline films on stationary or rotating substrates includes a combination of some or all of the elements including a photodiode sensor for detecting the intensity of incoming light and converting it to a measurable current, a lens for focusing the RHEED pattern emanating from the phosphor screen onto the photodiode, an interference filter for filtering out light other than that which emanates from the phosphor screen, a current amplifier for amplifying and converting the current produced by the photodiode into a voltage, a computer for receiving the amplified photodiode current for RHEED data analysis, and a graphite impregnated triax cable for improving the signal to noise ratio obtained while sampling a stationary or rotating substrate. A rotating stage for supporting the substrate with diametrically positioned electron beam apertures and an optically encoded shaft can also be used to accommodate rotation of the substrate during measurement.
  • Substrate Structures For Inp-Based Devices

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  • US Patent:
    49639498, Oct 16, 1990
  • Filed:
    Sep 30, 1988
  • Appl. No.:
    7/251484
  • Inventors:
    Mark W. Wanlass - Golden CO
    Peter Sheldon - Lakewood CO
  • Assignee:
    The United States of America as represented of the United States
    Department of Energy - Washington DC
  • International Classification:
    H01L 29205
    H01L 3106
  • US Classification:
    357 16
  • Abstract:
    A substrate structure for an InP-based semiconductor device having an InP based film is disclosed. The substrate structure includes a substrate region having a lightweight bulk substrate and an upper GaAs layer. An interconnecting region is disposed between the substrate region and the InP-based device. The interconnecting region includes a compositionally graded intermediate layer substantially lattice-matched at one end to the GaAs layer and substantially lattice-matched at the opposite end to the InP-based film. The interconnecting region further includes a dislocation mechanism disposed between the GaAs layer and the InP-based film in cooperation with the graded intermediate layer, the buffer mechanism blocking and inhibiting propagation of threading dislocations between the substrate region, and the InP-based device.
  • System For Monitoring The Growth Of Crystalline Films On Stationary Substrates

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  • US Patent:
    55889956, Dec 31, 1996
  • Filed:
    May 3, 1995
  • Appl. No.:
    8/434181
  • Inventors:
    Peter Sheldon - Lakewood CO
  • Assignee:
    Midwest Research Institute - Kansas City MI
  • International Classification:
    C30B 2516
  • US Classification:
    117201
  • Abstract:
    A system for monitoring the growth of crystalline films on stationary or rotating substrates includes a combination of some or all of the elements including a photodiode sensor for detecting the intensity of incoming light and converting it to a measurable current, a lens for focusing the RHEED pattern emanating from the phosphor screen onto the photodiode, an interference filter for filtering out light other than that which emanates from the phosphor screen, a current amplifier for amplifying and convening the current produced by the photodiode into a voltage, a computer for receiving the amplified photodiode current for RHEED data analysis, and a graphite impregnated triax cable for improving the signal to noise ratio obtained while sampling a stationary or rotating substrate. A rotating stage for supporting the substrate with diametrically positioned electron beam apertures and an optically encoded shaft can also be used to accommodate rotation of the substrate during measurement.
  • Photovoltaic Devices Comprising Cadmium Stannate Transparent Conducting Films And Method For Making

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  • US Patent:
    59221429, Jul 13, 1999
  • Filed:
    Nov 18, 1996
  • Appl. No.:
    8/746798
  • Inventors:
    Xuanzhi Wu - Golden CO
    Timothy J. Coutts - Lakewood CO
    Peter Sheldon - Lakewood CO
    Douglas H. Rose - Golden CO
  • Assignee:
    Midwest Research Institute
  • International Classification:
    H01L 3100
  • US Classification:
    136260
  • Abstract:
    A photovoltaic device having a substrate, a layer of Cd. sub. 2 SnO. sub. 4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd. sub. 2 SnO. sub. 4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd. sub. 2 SnO. sub. 4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd. sub. 2 SnO. sub. 4, and depositing an electrically conductive film onto the thin film of semiconductor materials.
  • Variable Temperature Semiconductor Film Deposition

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  • US Patent:
    57121877, Jan 27, 1998
  • Filed:
    Nov 9, 1995
  • Appl. No.:
    8/555621
  • Inventors:
    Xiaonan Li - Golden CO
    Peter Sheldon - Lakewood CO
  • Assignee:
    Midwest Research Institute - Kansas City MO
  • International Classification:
    H01L 2120
    H01L 3118
  • US Classification:
    437109
  • Abstract:
    A method of depositing a semiconductor material on a substrate. The method sequentially comprises (a) providing the semiconductor material in a depositable state such as a vapor for deposition on the substrate; (b) depositing the semiconductor material on the substrate while heating the substrate to a first temperature sufficient to cause the semiconductor material to form a first film layer having a first grain size; (c) continually depositing the semiconductor material on the substrate while cooling the substrate to a second temperature sufficient to cause the semiconductor material to form a second film layer deposited on the first film layer and having a second grain size smaller than the first grain size; and (d) raising the substrate temperature, while either continuing or not continuing to deposit semiconductor material to form a third film layer, to thereby anneal the film layers into a single layer having favorable efficiency characteristics in photovoltaic applications. A preferred semiconductor material is cadmium telluride deposited on a glass/tin oxide substrate already having thereon a film layer of cadmium sulfide.

Resumes

Peter Sheldon Photo 1

Deputy Director At National Renewable Energy Laboratory

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Position:
Deputy Director, National Center for Photovoltaics at National Renewable Energy Laboratory
Location:
Greater Denver Area
Industry:
Renewables & Environment
Work:
National Renewable Energy Laboratory - Golden, CO since Mar 2012
Deputy Director, National Center for Photovoltaics

National Renewable Energy Laboratory (NREL) 1999 - Apr 2012
Division Manager, Measurements and Characterization

National Renewable Energy Laboratory Apr 2009 - Aug 2009
Acting Director, National Center for Photovoltaics

National Renewable Energy Laboratory Nov 2008 - Apr 2009
Acting Deputy Director, National Center for Photovoltaics

National Renewable Energy Laboratory 1999 - 2006
Technical Lead and Project Manager, NREL Science & Technology Facility
Education:
University of Colorado at Boulder 1982 - 1986
MS, EE
Honor & Awards:
AVS Fellow
Peter Sheldon Photo 2

Sales And Marketing

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Position:
Sales and Marketing at OmniTRAX
Location:
Greater Denver Area
Industry:
Logistics and Supply Chain
Work:
OmniTRAX
Sales and Marketing

APL 2003 - 2010
Sales and Marketing
Education:
University of Colorado at Denver 2007 - 2011
MBA, Finance
University of Colorado at Boulder 1996 - 2000
Peter Sheldon Photo 3

President At Sheldon Associates

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Position:
President at Sheldon Associates
Location:
Greater New York City Area
Industry:
Entertainment
Work:
Sheldon Associates
President
Peter Sheldon Photo 4

Center Manager-Branford, Ct At Fedex Office

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Position:
Center Manager at FedEx Office
Location:
Greater New York City Area
Industry:
Printing
Work:
FedEx Office
Center Manager
Peter Sheldon Photo 5

Division Manager At National Renewable Energy Laboratory

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Location:
Greater Denver Area
Industry:
Renewables & Environment

Classmates

Peter Sheldon Photo 6

Peter Sheldon

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Schools:
Indian Lakes Elementary School Virginia Beach VA 1985-1989
Community:
Jeannie Slack, Mindy Blankenbeckler, Madelyne Easterling
Peter Sheldon Photo 7

Peter Sheldon

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Schools:
Jesse Ketchum Elementary School Toronto Morocco 1989-1991, Withrow Public School Toronto Morocco 1991-1992, Hodgson Senior Public School Toronto Morocco 1994-1996
Community:
Gabe Nemeth, Joyce Reeves, Edward Collins, Gordon Postill
Peter Sheldon Photo 8

Peter Sheldon

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Schools:
Woodstock Elementary School Woodstock CT 1986-1990
Community:
Tony Giroux, Emily Foisy, Amy Williams, Peter Roy, Tia Hamilton
Peter Sheldon Photo 9

Peter Sheldon

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Schools:
North Middlesex Regional Townsend MA 1970-1974
Community:
Dawn Forney, Suzanne Laplante, Margaret Lavorgna, Larraine Cregar, Cheryl Caron
Peter Sheldon Photo 10

Peter Sheldon, University...

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Peter Sheldon Photo 11

North Middlesex Regional,...

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Graduates:
Peter Sheldon (1970-1974),
Patricia Schulze (1963-1967),
Bob Smith (1999-2003),
Matthew Baumber (1989-1993)
Peter Sheldon Photo 12

Indian Lakes Elementary S...

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Graduates:
Peter Sheldon (1985-1989),
ann Dugan (1986-1990),
Michael Crowley (1994-1996),
Wilfred Eclarino (1986-1987),
Nicole Williams (1988-1993)
Peter Sheldon Photo 13

Woodstock Elementary Scho...

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Graduates:
Peter Sheldon (1986-1990),
Chris Geoghegan (1987-1991),
Garry Sands (1967-1971),
Hannah MacMillan (1996-2000)

Plaxo

Peter Sheldon Photo 14

peter sheldon

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Lynchburg, VAProfessor of Physics at Randolph College (formerly... Past: Visiting Professor of Physics at Davidson College, Visiting Professor of Physics at Wake...
Peter Sheldon Photo 15

Peter Sheldon

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Israel

Myspace

Peter Sheldon Photo 16

Peter Sheldon

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Locality:
South Australia, Australia
Gender:
Male
Birthday:
1942
Peter Sheldon Photo 17

Peter Sheldon

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Locality:
Wisbech, Cambridgeshire
Gender:
Male
Birthday:
1930

Youtube

Peter Schiff Predicts A Horrible Economic Cri...

Peter Schiff warns about worsening economic conditions, sharing his th...

  • Duration:
    16m 19s

HOW TO WIN UNDERDOG'S PLAYOFF CONTESTS

Alright, it's been a minute. Let's catch up, pour one out for our BBM3...

  • Duration:
    1h 17m 14s

sheldon tells peter a joke

funny peter sheldon voice by: peter voice by: inspired by:...

  • Duration:
    1m 25s

Peter forgot to record Young Sheldon

From the Family Guy episode The Talented Mr. Stewie.

  • Duration:
    7s

The Big Bang Theory | Best of Sheldon | HBO Max

Take a look into the life of the one-of-a-kind genius, Sheldon Cooper,...

  • Duration:
    10m 45s

Peter Sheldon

Keynote Speaker @ MM18UK.

  • Duration:
    34m 15s

Flickr

Facebook

Peter Sheldon Photo 26

Peter Martin Sheldon

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Peter Sheldon Photo 27

Peter Sheldon

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Peter Sheldon Photo 28

Peter Sheldon

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Peter Sheldon Photo 29

Peter J Sheldon

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Peter Sheldon Photo 30

Peter Sheldon

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Peter Sheldon Photo 31

Peter Sheldon

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Peter Sheldon Photo 32

Peter Sheldon

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Peter Sheldon Photo 33

Peter Sheldon

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Googleplus

Peter Sheldon Photo 34

Peter Sheldon

Peter Sheldon Photo 35

Peter Sheldon

Peter Sheldon Photo 36

Peter Sheldon

Peter Sheldon Photo 37

Peter Sheldon

Peter Sheldon Photo 38

Peter Sheldon

Peter Sheldon Photo 39

Peter Sheldon

Peter Sheldon Photo 40

Peter Sheldon

Peter Sheldon Photo 41

Peter Sheldon


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