Peter T Thomas

US Patent:

51008360, Mar 31, 1992

Filed:

Mar 26, 1991

Appl. No.:

7/675304

Inventors:

William C. Dautremont-Smith - Westfield NJ
Avishay Katz - Westfield NJ
Louis A. Koszi - Scotch Plains NJ
Bryan P. Segner - Piscataway NJ
Peter M. Thomas - Murray Hill NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2144

US Classification:

437184

Abstract:

Disclosed is a method of making a semiconductor device that exemplarily comprises depositing a Ti/Pt layer onto a AuBe intermediate layer on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto a AuGe intermediate layer on the n-doped region, followed by rapid thermal processing. Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425. degree. -500. degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10. sup. -7. OMEGA. multidot. cm. sup. 2).

US Patent:

50360230, Jul 30, 1991

Filed:

Aug 16, 1989

Appl. No.:

7/394600

Inventors:

William C. Dautremont-Smith - Westfield NJ
Avishay Katz - Cranford NJ
Louis A. Koszi - Scotch Plains NJ
Bryan P. Segner - Piscataway NJ
Peter M. Thomas - Berkeley Heights NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2144

US Classification:

437184

Abstract:

The inventive method of producing a device having non-alloyed ohmic contacts of common composition to both an n-doped and a p-doped region of a semiconductor body comprises deposition of a Ti/Pt layer on the p-doped as well as the n-doped region, followed by rapid thermal processing (RTP). Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425. degree. -475. degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10. sup. -7. OMEGA. multidot. cm. sup. 2).