Peter A Thomas

US Patent:

48063100, Feb 21, 1989

Filed:

May 7, 1987

Appl. No.:

7/047338

Inventors:

Michael A. Mullins - Wayne NJ
Peter A. Thomas - Budd Lake NJ

Assignee:

Drew Chemical Corporation - Boonton NJ

International Classification:

C23F 1112
C23F 1114
C23F 11167

US Classification:

422 13

Abstract:

A corrosion inhibitor for ferrous and non-ferrous aqueous systems comprising (a) a water soluble phosphonic acid or salt thereof, preferably an amino methylene phosphonic acid; (b) a phosphonocarboxylic acid, preferably a phosphonoalkane carboxylic acid; (c) an azole, preferably benzotriazole or tolyltriazole; and (d) a water soluble molybdate salt, preferably sodium molybdate.

US Patent:

51008360, Mar 31, 1992

Filed:

Mar 26, 1991

Appl. No.:

7/675304

Inventors:

William C. Dautremont-Smith - Westfield NJ
Avishay Katz - Westfield NJ
Louis A. Koszi - Scotch Plains NJ
Bryan P. Segner - Piscataway NJ
Peter M. Thomas - Murray Hill NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2144

US Classification:

437184

Abstract:

Disclosed is a method of making a semiconductor device that exemplarily comprises depositing a Ti/Pt layer onto a AuBe intermediate layer on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto a AuGe intermediate layer on the n-doped region, followed by rapid thermal processing. Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425. degree. -500. degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10. sup. -7. OMEGA. multidot. cm. sup. 2).

US Patent:

46648844, May 12, 1987

Filed:

Jun 14, 1985

Appl. No.:

6/745311

Inventors:

Michael A. Mullins - Wayne NJ
Peter A. Thomas - Budd Lake NJ

Assignee:

Drew Chemical Corporation - Boonton NJ

International Classification:

C23F 1112
C23F 1114
C23F 11167

US Classification:

422 13

Abstract:

A corrosion inhibitor for ferrous and non-ferrous aqueous systems comprising (a) a water soluble phosphonic acid or salt thereof, preferably an amino methylene phosphonic acid; (b) a phosphonocarboxylic acid, preferably a phosphonoalkane carboxylic acid; and (c) a triazole, preferably benzotriazole or tolyltriazole.

US Patent:

49700260, Nov 13, 1990

Filed:

Sep 21, 1988

Appl. No.:

7/247136

Inventors:

Michael A. Mullins - Wayne NJ
Robert W. Mueller - Riverdale NJ
Peter A. Thomas - Lafayette NJ

Assignee:

Drew Chemical Corporation - Boonton NJ

International Classification:

C23F 1110

US Classification:

25238962

Abstract:

A corrosion inhibitor for ferrous and non-ferrous aqueous systems comprising any of (1) a naphthenic oil based sodium salt of a triethanolamine alkylsulfamido carboxylic acid, (2) a paraffinic oil based sodium salt of a triethanolamine alkylsulfamido carboxylic acid, (3) a sodium salt of an alkylsulfamido carboxylic acid, and (4) a synergistic mixture of any two of (1), (2) and (3).

US Patent:

50360230, Jul 30, 1991

Filed:

Aug 16, 1989

Appl. No.:

7/394600

Inventors:

William C. Dautremont-Smith - Westfield NJ
Avishay Katz - Cranford NJ
Louis A. Koszi - Scotch Plains NJ
Bryan P. Segner - Piscataway NJ
Peter M. Thomas - Berkeley Heights NJ

Assignee:

AT&T Bell Laboratories - Murray Hill NJ

International Classification:

H01L 2144

US Classification:

437184

Abstract:

The inventive method of producing a device having non-alloyed ohmic contacts of common composition to both an n-doped and a p-doped region of a semiconductor body comprises deposition of a Ti/Pt layer on the p-doped as well as the n-doped region, followed by rapid thermal processing (RTP). Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425. degree. -475. degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10. sup. -7. OMEGA. multidot. cm. sup. 2).

US Patent:

46473149, Mar 3, 1987

Filed:

Mar 5, 1985

Appl. No.:

6/708572

Inventors:

Michael A. Mullins - Wayne NJ
Peter A. Thomas - Budd Lake NJ

Assignee:

Drew Chemical Corporation - Boonton NJ

International Classification:

B08B 308
B08B 704
C11D 162
C11D 1835

US Classification:

134 30

Abstract:

Can containing food are rinsed with an aqueous solution of quaternary ammonium salt and oxyalkylene polymer (homopolymer of oxyethylene or copolymer of oxyethylene and oxypropylene).