Peter D Wildes

US Patent:

6491752, Dec 10, 2002

Filed:

Jul 16, 1999

Appl. No.:

09/354994

Inventors:

Fritz G. Kirscht - Salem OR
Peter D. Wildes - West Linn OR
Volker R. Todt - Corvallis OR
Nobuo Fukuto - Salem OR
Boris A. Snegirev - Woodburn OR

Assignee:

SUMCO Oregon Corporation - Salem OR

International Classification:

H01L 21228

US Classification:

117 21, 438510

Abstract:

An enhanced n silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n epitaxial wafers based on these substrates. The method for preparing such n silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n epitaxial wafers are applied in device manufacturing.

US Patent:

20030116083, Jun 26, 2003

Filed:

Nov 27, 2002

Appl. No.:

10/307160

Inventors:

Fritz Kirscht - Salem OR, US
Peter Wildes - West Linn OR, US
Volker Todt - Corvallis OR, US
Nobuo Fukuto - Salem OR, US
Boris Snegirev - Woodburn OR, US

Assignee:

SUMCO Oregon corporation - Salem OR

International Classification:

C30B015/00
C30B021/06
C30B027/02
C30B028/10
C30B030/04

US Classification:

117/021000

Abstract:

An enhanced n silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n epitaxial wafers based on these substrates. The method for preparing such n silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n epitaxial wafers are applied in device manufacturing.

US Patent:

20180291524, Oct 11, 2018

Filed:

Apr 29, 2016

Appl. No.:

15/570955

Inventors:

- Kowloon, HK
Gaurab Samanta - Brentwood MO, US
Salvador Zepeda - St. Peters MO, US
Christopher V. Luers - O'Fallon MO, US
Steven L. Kimbel - St. Charles MO, US
Carissima Marie Hudson - St. Charles MO, US
Hariprasad Sreedharamurthy - Ballwin MO, US
Roberto Scala - Merano, IT
Richard J. Phillips - St. Peters MO, US
Tirumani N. Swaminathan - Creve Coeur MO, US
Jihong Chen - Cincinnati OH, US
Stephen Wayne Palmore - Vancouver WA, US
Peter Drury Wildes - Washougal WA, US

International Classification:

C30B 15/04
C30B 29/06
C30B 15/20

Abstract:

Methods for growing single crystal ingots doped with volatile dopants and ingots grown according to the methods are described herein.