Phillip F Jenkins

US Patent:

6746149, Jun 8, 2004

Filed:

Jun 1, 1999

Appl. No.:

09/323650

Inventors:

Donald L. Chubb - Olmsted Falls OH
Phillip Jenkins - Cleveland Heights OH

Assignee:

The United States of America as represented by the Admistrator of NASA - Washington DC

International Classification:

G01K 1100

US Classification:

374161, 374131

Abstract:

A rare earth optical temperature sensor is disclosed for measuring high temperatures. Optical temperature sensors exist that channel emissions from a sensor to a detector using a light pipe. The invention uses a rare earth emitter to transform the sensed thermal energy into a narrow band width optical signal that travels to a detector using a light pipe. An optical bandpass filter at the detector removes any noise signal outside of the band width of the signal from the emitter.

US Patent:

7718283, May 18, 2010

Filed:

Aug 22, 2008

Appl. No.:

12/196939

Inventors:

Ryne P. Raffaelle - Honeoye Falls NY, US
Phillip Jenkins - Cleveland Heights OH, US
David Wilt - Bay Village OH, US
David Scheiman - Cleveland OH, US
Donald Chubb - Olmsted Falls OH, US
Stephanie Castro - Westlake OH, US

Assignee:

Rochester Institute of Technology - Rochester NY
Glenn Research Center - Cleveland OH
Ohio Aerospace Institute - Brook Park OH

International Classification:

H01M 14/00

US Classification:

429 5

Abstract:

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

US Patent:

7867639, Jan 11, 2011

Filed:

Mar 29, 2005

Appl. No.:

11/093134

Inventors:

Ryne P. Raffaelle - Honeoye Falls NY, US
Phillip Jenkins - Cleveland Heights OH, US
David Wilt - Bay Village OH, US
David Scheiman - Cleveland OH, US
Donald Chubb - Olmsted Falls OH, US
Stephanie Castro - Westlake OH, US

Assignee:

Rochester Institute of Technology - Rochester NY
The United States of America as represented by the Administrator of National Aeronautics and Space Administration - Washington DC

International Classification:

H01M 14/00

US Classification:

429 5

Abstract:

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

US Patent:

7867640, Jan 11, 2011

Filed:

Aug 22, 2008

Appl. No.:

12/196790

Inventors:

Ryne P. Raffaelle - Honeoye Falls NY, US
Phillip Jenkins - Cleveland Heights OH, US
David Wilt - Bay Village OH, US
David Scheiman - Cleveland OH, US
Donald Chubb - Olmsted Falls OH, US
Stephanie Castro - Westlake OH, US

Assignee:

Rochester Institute of Technology - Rochester NY
The United States of America as represented by the Administrator of the National Aeronautics and Space Administration - Washington DC

International Classification:

H01M 14/00

US Classification:

429 5

Abstract:

An alpha voltaic battery includes at least one layer of a semiconductor material comprising at least one p/n junction, at least one absorption and conversion layer on the at least one layer of semiconductor layer, and at least one alpha particle emitter. The absorption and conversion layer prevents at least a portion of alpha particles from the alpha particle emitter from damaging the p/n junction in the layer of semiconductor material. The absorption and conversion layer also converts at least a portion of energy from the alpha particles into electron-hole pairs for collection by the one p/n junction in the layer of semiconductor material.

US Patent:

53003209, Apr 5, 1994

Filed:

Jun 23, 1992

Appl. No.:

7/903256

Inventors:

Andrew R. Barron - Cambridge MA
Michael B. Power - Quincy MA
Andrew N. MacInnes - Dorchester MA
Aloysius F. Hepp - Bay Village OH
Phillip P. Jenkins - Cleveland Heights OH

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

C23C 1600

US Classification:

427249

Abstract:

A method is disclosed for forming a passivating/buffer film on a substrate. The method includes heating the substrate to a temperature which is sufficient to cause a volatilized organometallic precursor to pyrolyze and thereby form a passivating/buffer film on a substrate. The organometallic precursor is volatilized at a precursor source. A carrier gas is directed from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate. The volatilized precursor pyrolyzes and is deposited onto the substrate, thereby forming the passivating/buffer film on the substrate. The passivating/buffer film can be a cubic-phase passivating/buffer film. An oxide layer can also be formed on the passivating/buffer film to thereby form a composite of the substrate, the passivating/buffer film and the oxide layer. Cubic-phase passivating/buffer films formed by the method of the invention can be lattice-matched with the substrate.

US Patent:

57604622, Jun 2, 1998

Filed:

Mar 19, 1997

Appl. No.:

8/820183

Inventors:

Andrew R. Barron - Cambridge MA
Phillip P. Jenkins - Cleveland Heights OH
Andrew N. MacInnes - Quincy MA
Aloysius F. Hepp - Bay Village OH

Assignee:

President and Fellows of Harvard College - Cambridge MA
TriQuint Semiconductor, Inc. - Beaverton OR

International Classification:

H01L 2358
H01L 2978

US Classification:

257629

Abstract:

A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device is a metal, passivating layer, semiconductor, field-effect transistor. The transistor includes an active layer and thin-film passivating layer on the active layer. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. Source and drain contacts are disposed on the active layer or the passivating layer. A gate contact is disposed on the passivating layer between the source contact and the drain contact.

US Patent:

60085258, Dec 28, 1999

Filed:

Dec 18, 1997

Appl. No.:

8/993613

Inventors:

Andrew R. Barron - Cambridge MA
Aloysius F. Hepp - Bay Village OH
Phillip P. Jenkins - Cleveland Heights OH
Andrew N. MacInnes - Quincy MA

Assignee:

President and Fellows of Harvard College - Cambridge MA
TriQuint Semiconductor, Inc. - Hillsboro OR
The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

H01L 2358
H01L 2978

US Classification:

257629

Abstract:

A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.

US Patent:

52619702, Nov 16, 1993

Filed:

Apr 8, 1992

Appl. No.:

7/865072

Inventors:

Geoffrey A. Landis - Brook Park OH
Phillip P. Jenkins - Cleveland Heights OH

Assignee:

Sverdrup Technology, Inc. - Tullohoma TN

International Classification:

H01L 310236
H01L 3118

US Classification:

136259

Abstract:

Low angle V-grooves are provided in the target surfaces of optoelectronic or photovoltaic devices such as solar cells and photodetectors. The low angle V-grooves increase the efficiency of the devices by promoting total internal reflection of light reflected from the target surface at the interface of the coverglass and the external environment.