Phillip J Jenkins

US Patent:

20130048063, Feb 28, 2013

Filed:

Aug 23, 2012

Appl. No.:

13/592524

Inventors:

Robert J. Walters - Alexandria VA, US
Phillip Jenkins - Washington DC, US
Maria Gonzalez - Washington DC, US
Igor Vurgaftman - Odenton MD, US
Jerry R. Meyer - Catonsville MD, US
Joshua Abell - University Park MD, US
Matthew P. Lumb - Alexandria VA, US
Michael K. Yakes - Alexandria VA, US
Joseph G. Tischler - Alexandria VA, US
Cory Cress - Alexandria VA, US
Nicholas Ekins-Daukes - Newbury, GB
Paul Stavrinou - London, GB
Jessica Adams - Chicago IL, US
Ngai Chan - London, GB

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 31/0725
G06F 17/50

US Classification:

136255, 716110

Abstract:

A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from InAlAsSb(with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from InGaAlAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.

US Patent:

20190245111, Aug 8, 2019

Filed:

Feb 1, 2019

Appl. No.:

16/264845

Inventors:

- Arlington VA, US
David Scheiman - Alexandria VA, US
Phillip Jenkins - Cleveland Heights OH, US
Robert J. Walters - Alexandria VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 31/18
H01L 31/0224
H01L 31/0236

Abstract:

A method for making an ultra-thin, flexible crystalline silicon solar cell from thick, inflexible cells. A thick, inflexible cell having a plurality of electrical contacts on the back side thereof is adhered to a mount by means of a temporary bonding adhesive tape and a thickness of the mounted stack. A thickness of the bonding tape and the back-side contacts is determined and compared to a desired thickness of the final cell. Excess material is ground from the front side of the stack to obtain a thinned stack having the desired thickness and the thinned stack is removed from the mount to produce an ultra-thin, flexible rear-contact Si solar cell having a total thickness of less than 80 μm and a bending radius of less than 20 mm. The front surface can be textured, with a passivation layer and/or a dielectric layer being deposited thereon.

US Patent:

20180248058, Aug 30, 2018

Filed:

Feb 23, 2018

Appl. No.:

15/903259

Inventors:

- Arlington VA, US
María González - Alexandria VA, US
Phillip Jenkins - Cleveland Heights OH, US
Robert J. Walters - Alexandria VA, US
Antonio Marti Vega - Madrid, ES
Elisa Antolín Fernández - Madrid, ES
Esther López Estrada - Toledo, ES

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 31/0352
H01L 31/101
G01N 21/35

Abstract:

A semiconductor device that utilizes intraband photon absorption in quantum dots to provide a capacitive photodetector. The presence of the quantum dots creates confined energy states within the photodetector device. Electrons are trapped in these confined energy states. When the photodetector is illuminated by light having an appropriate photon energy, the stored electrons are released to the conduction band, causing a change in the capacitance of the photodetector. By measuring this change in capacitance, light incident on the photodetector can be detected and quantified.

US Patent:

20170353149, Dec 7, 2017

Filed:

Jun 2, 2017

Appl. No.:

15/611878

Inventors:

- Arlington VA, US
Michael K. Yakes - Alexandria VA, US
Cory D. Cress - Alexandria VA, US
Phillip Jenkins - Cleveland Heights OH, US
Jeffrey H. Warner - Arbutus MD, US
Kenneth Schmieder - Alexandria VA, US
Robert J. Walters - Alexandria VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H02S 30/20
H01L 31/054
H01L 31/0304
H01L 31/055

Abstract:

Photovoltaic (PV) device comprising an ultra-thin radiation-tolerant PV absorber mounted on a flexible film having an embedded persistent phosphor and having a plurality of interdigitated top and bottom contacts on the top of the PV absorber. The PV absorber is ultra-thin, e.g., typically having a thickness of 300 nm or less for a III-V-based absorber. The phosphor absorbs some of the photons incident on the device and then discharges them for use by the device in generating electrical power during times when the device is not illuminated by the sun.

US Patent:

20150325720, Nov 12, 2015

Filed:

Jun 16, 2015

Appl. No.:

14/740348

Inventors:

Robert J. Walters - Alexandria VA, US
Phillip Jenkins - Washington DC, US
Maria Gonzalez - Washington DC, US
Igor Vurgaftman - Severna Park MD, US
Jerry R. Meyer - Catonsville MD, US
Joshua Abell - University Park MD, US
Nicholas Ekins-Daukes - Newbury, GB
Jessica Adams - Chicago IL, US
Paul Stavrinou - London, GB
Michael K. Yakes - Alexandria VA, US
Joseph G. Tischler - Alexandria VA, US
Cory D. Cress - Alexandria VA, US
Matthew P. Lumb - Alexandria VA, US
Ngai Chan - London, GB

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 31/0304
H01L 31/036

Abstract:

A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from InAlAsSb(with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from InGaAlAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.

US Patent:

20150083890, Mar 26, 2015

Filed:

Jul 2, 2014

Appl. No.:

14/322234

Inventors:

Raymond Hoheisel - Arlington VA, US
David A. Scheiman - Alexandria VA, US
Justin R. Lorentzen - Washington DC, US
Phillip P. Jenkins - Cleveland Heights OH, US
Robert J. Walters - Alexandria VA, US

Assignee:

US Gov't Repersented by the Secretary of the Navy Chief of Naval Research ONR/NRL - Arlington VA

International Classification:

G01J 3/32
G01J 5/46
G01J 5/30

US Classification:

250206

Abstract:

A spectral radiometer system, measures incoming light intensity and spectral distribution in different wavelength-bands. An additional data storage device allows recording of the measured data. The inclusive sensor system yields very high sensitivity to incoming light. Furthermore, outstanding linearity of the detector response over several orders of magnitude of incoming light is achieved. Additional benefits are ultra low power consumption and minimum size. The sensor system can be used in remote solar radiation monitoring applications like mobile solar power units as well as in long-term environmental monitoring systems where high precision and low power consumption is a necessity.

Address:

1821 Rockford Ct, Allen, TX 75013

VIN:

WBAVA33597PG49258

Make:

BMW

Model:

3 SERIES

Year:

2007