Prabhat Kumar

US Patent:

7368176, May 6, 2008

Filed:

Jan 14, 2004

Appl. No.:

10/542945

Inventors:

Richard Wu - Chelmsford MA, US
James Cornie - Cambridge MA, US
Stephen Cornie - Watertown MA, US
Hank Breit - Attleboro MA, US
Larry Ballard - Denver CO, US
Richard Malen - Tyngsboro MA, US
Prabhat Kumar - Framingham MA, US
John Shields - Cleveland OH, US
Robert Desberg - Scottsdale AZ, US

Assignee:

H.C. Starck Inc. - Newton MA
Metal Matrix Cast Composites, Inc. - Waltham MA

International Classification:

B32B 15/04
B32B 15/14
B32B 15/20

US Classification:

428634, 428114, 4282931, 428457, 4285395, 428650

Abstract:

The invention relates to a method that involves (a) removing graphite from at least one surface of a metal graphite composite material; (b) chemically cleaning or plasma etching the surface of the metal graphite composite material; (c) applying a metal-containing material to the surface of the chemically cleaned or plasma etched metal graphite composite material, and thereby forming an intermediate layer; (d) applying a metal coating on the intermediate layer, and thereby forming a composite material. The invention also relates to a composite material comprising (a) a metal graphite composite substrate having at least one surface that is substantially free of graphite; (b) a metal-containing intermediate layer located on a surface of the substrate; and (c) a metal coating on the intermediate layer.

US Patent:

7416789, Aug 26, 2008

Filed:

Nov 1, 2004

Appl. No.:

10/978940

Inventors:

Henry F. Breit - Attleboro MA, US
Prabhat Kumar - Framingham MA, US

Assignee:

H.C. Starck Inc.

International Classification:

B32B 3/20
B32B 3/24
B32B 3/30
B32B 15/01
B32B 15/04
B32B 15/20
H01L 23/36

US Classification:

428614, 428596, 428620, 428621, 428660, 428668, 428674, 428457, 361709, 257720

Abstract:

A substrate for semiconductor and integrated circuit components including:The substrate can be used in electronic devices, which can also include one or more semiconductor components.

US Patent:

7645494, Jan 12, 2010

Filed:

Mar 27, 2008

Appl. No.:

12/056798

Inventors:

Richard Wu - Chelmsford MA, US
James Cornie - Cambridge MA, US
Stephen Cornie - Watertown MA, US
Hank Breit - Attleboro MA, US
Larry Ballard - Denver CO, US
Richard R. Malen - Tyngsboro MA, US
Prabhat Kumar - Framingham MA, US
John Shields - Cleveland OH, US
Robert Desberg - Scottsdale AZ, US

Assignee:

H.C. Starck Inc. - Newton MA

International Classification:

C23C 14/02
B05D 3/00
B05D 3/04
C23F 1/00

US Classification:

427534, 427299, 427307, 427309, 216 75, 216 81, 216100

Abstract:

The invention relates to a method that involves (a) removing graphite from at least one surface of a metal graphite composite material; (b) chemically cleaning or plasma etching the surface of the metal graphite composite material; (c) applying a metal-containing material to the surface of the chemically cleaned or plasma etched metal graphite composite material, and thereby forming an intermediate layer; (d) applying a metal coating on the intermediate layer, and thereby forming a composite material. The invention also relates to a composite material comprising (a) a metal graphite composite substrate having at least one surface that is substantially free of graphite; (b) a metal-containing intermediate layer located on a surface of the substrate; and (c) a metal coating on the intermediate layer.

US Patent:

7651658, Jan 26, 2010

Filed:

Jan 22, 2003

Appl. No.:

10/501837

Inventors:

Paul R. Aimone - Bridgewater MA, US
Prabhat Kumar - Framingham MA, US
Peter R. Jepson - Newbury MA, US

Assignee:

H.C. Starck Inc. - Newton MA

International Classification:

B22F 5/00
B23K 26/32

US Classification:

419 9, 21912166, 21912185, 427554, 427597

Abstract:

A process to chemically refine and consolidate tantalum, niobium and their alloys to a fabricated product of net shape or near-net shape with higher throughput, more consistency, and lower manufacturing costs compared to prior art routes or rejuvenate damaged and deteriorated refractory metal parts. Powder metal is loaded into hoppers to be fed into laser forming/melting equipment. A suitable substrate is loaded into a laser forming/melting chamber onto which the powder will be deposited and consolidated in a point-scan process. As the powder is fed onto successive points of the surface of the substrate in linear traces, the laser is used to heat and partially melt the substrate and completely melt the powder. A combined deposition and melt beam traces the substrate surface repeatedly over a selected area to build up a dense coating of controlled microstructure in multiple layers. A fully dense deposit is built up that becomes the desired shape.

US Patent:

7754185, Jul 13, 2010

Filed:

Jan 18, 2006

Appl. No.:

11/334140

Inventors:

Lawrence F. McHugh - North Andover MA, US
Prabhat Kumar - Framingham MA, US
David Meendering - Coldwater MI, US
Richard Wu - Chelmsford MA, US
Gerhard Wötting - Coburg, DE
Richard Nicholson - Chardon OH, US

Assignee:

H.C. Starck Inc. - Newton MA

International Classification:

C01G 39/02
B22F 3/15

US Classification:

423606, 419 26, 419 49

Abstract:

The invention relates to high purity MoOpowder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press/sintering, hot pressing, and/or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoOdisc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoOand MoOcontaining thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.

US Patent:

7794554, Sep 14, 2010

Filed:

Jan 19, 2005

Appl. No.:

11/038890

Inventors:

Paul R. Aimone - Bridgewater MA, US
Prabhat Kumar - Framingham MA, US
Peter R. Jepson - Newbury MA, US
Henning Uhlenhut - Jena, DE
Howard V. Goldberg - Framingham MA, US
Steven A. Miller - Canton MA, US

Assignee:

H.C. Starck Inc. - Newton MA

International Classification:

C21D 5/00

US Classification:

148512, 148668, 148714, 419 30, 419 1, 419 61, 2041921, 20429812, 20419212

Abstract:

Refractory metal products, such as tantalum, can be rejuvenated after metal consumption in selected zones by filling the zones with powder and simultaneously applying focused radiant energy to the powder.

US Patent:

7910051, Mar 22, 2011

Filed:

Nov 5, 2007

Appl. No.:

11/935099

Inventors:

Stefan Zimmermann - Laufenburg, DE
Steve A. Miller - Canton MA, US
Prabhat Kumar - Framingham MA, US
Mark Gaydos - Nashua NH, US

Assignee:

H.C. Starck GmbH - Goslar
H.C. Starck, Inc. - Newton MA

International Classification:

C22F 3/02
C23C 14/00
B05D 1/12

US Classification:

419 61, 20429812, 20429813, 427181, 427446

Abstract:

In various embodiments, large-area sputtering targets are formed by providing a plurality of sputtering targets each comprising a backing plate and a refractory metal layer disposed thereon, and spray depositing a refractory metal powder on an interface between the sputtering targets, the refractory metal powder consisting essentially of the same metal as each refractory metal layer, thereby joining the refractory metal layers of the sputtering targets.

US Patent:

8197894, Jun 12, 2012

Filed:

Nov 8, 2007

Appl. No.:

11/937164

Inventors:

Steven A. Miller - Canton MA, US
Olaf Schmidt-Park - Needham MA, US
Prabhat Kumar - Framingham MA, US
Richard Wu - Chelmsford MA, US
Shuwei Sun - Framingham MA, US
Stefan Zimmermann - Laufenburg, DE

Assignee:

H.C. Starck GmbH - Golsar
H.C. Starck Inc. - Newton MA

International Classification:

B05D 1/12

US Classification:

427192, 427201, 427427

Abstract:

In various embodiments, sputter-target formation includes application of a layer having an intermediate coefficient of thermal expansion between the backing plate and the target material.