Qing Liu

US Patent:

7777500, Aug 17, 2010

Filed:

Sep 29, 2008

Appl. No.:

12/240414

Inventors:

Jaehyun Kim - Fremont CA, US
Arthur H. Sato - San Jose CA, US
Keith Comendant - Fremont CA, US
Qing Liu - Austin TX, US
Feiyang Wu - San Francisco CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G01R 27/26

US Classification:

324663, 324639

Abstract:

Characterizing dielectric properties of a part includes placing a full-sized part within a dielectric property measurement apparatus. In one embodiment, the full-sized part is a dielectric part of a plasma processing system. The dielectric property measurement apparatus is operated to determine a dielectric constant value of the full-sized part and a loss tangent value of the full-sized part. The determined dielectric constant and loss tangent values are affixed to the full-sized part.

US Patent:

7911213, Mar 22, 2011

Filed:

Sep 29, 2008

Appl. No.:

12/240375

Inventors:

Jaehyun Kim - Fremont CA, US
Arthur H. Sato - San Jose CA, US
Keith Comendant - Fremont CA, US
Qing Liu - Austin TX, US
Feiyang Wu - San Francisco CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G01R 27/26

US Classification:

324671, 324663

Abstract:

A method is disclosed for calibrating a capacitance of an apparatus for measuring dielectric properties of a part. The apparatus includes an electrically grounded chamber, a lower electrode disposed within the chamber and connected to a radiofrequency (RF) transmission rod, an electrically grounded upper electrode disposed within the chamber above the lower electrode, and a variable capacitor connected to control transmission of RF power through the RF transmission rod to the lower electrode. A method is also disclosed for determining a capacitance of a part through use of the apparatus. A method is also disclosed for determining a dielectric constant of a part through use of the apparatus. A method is also disclosed for determining a loss tangent of a part through use of the apparatus.

US Patent:

7973539, Jul 5, 2011

Filed:

Feb 17, 2011

Appl. No.:

13/030015

Inventors:

Jaehyun Kim - Fremont CA, US
Arthur H. Sato - San Jose CA, US
Keith Comendant - Fremont CA, US
Qing Liu - Austin TX, US
Feiyang Wu - San Francisco CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G01R 35/00
G01R 31/00

US Classification:

324601, 32475002

Abstract:

A method is disclosed for calibrating a capacitance of an apparatus for measuring dielectric properties of a part. The apparatus includes an electrically grounded chamber, a lower electrode disposed within the chamber and connected to a radiofrequency (RF) transmission rod, an electrically grounded upper electrode disposed within the chamber above the lower electrode, and a variable capacitor connected to control transmission of RF power through the RF transmission rod to the lower electrode. A method is also disclosed for determining a capacitance of a part through use of the apparatus. A method is also disclosed for determining a dielectric constant of a part through use of the apparatus. A method is also disclosed for determining a loss tangent of a part through use of the apparatus.

US Patent:

8269510, Sep 18, 2012

Filed:

Sep 29, 2008

Appl. No.:

12/240291

Inventors:

Jaehyun Kim - Fremont CA, US
Arthur H. Sato - San Jose CA, US
Keith Comendant - Fremont CA, US
Qing Liu - Austin TX, US
Feiyang Wu - San Francisco CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G01R 27/26

US Classification:

324671, 324663

Abstract:

A chamber formed from an electrically conductive material is connected to a ground potential. A hot electrode formed from an electrically conductive material is disposed within the chamber in a substantially horizontal orientation and is physically separated from the chamber. The hot electrode includes a top surface defined to support a part to be measured. A radiofrequency (RF) transmission rod is connected to extend from a bottom surface of the hot electrode through an opening in a bottom of the chamber and be physically separated from the chamber. The RF transmission rod is defined to transmit RF power from a conductor plate in an electrical components housing to the hot electrode. An upper electrode formed from an electrically conductive material is disposed within the chamber in a substantially horizontal orientation. The upper electrode is electrically connected to the chamber and is defined to be movable in a vertical direction.

US Patent:

8519724, Aug 27, 2013

Filed:

Sep 29, 2008

Appl. No.:

12/240329

Inventors:

Jaehyun Kim - Fremont CA, US
Arthur H. Sato - San Jose CA, US
Keith Comendant - Fremont CA, US
Qing Liu - Austin TX, US
Feiyang Wu - San Francisco CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G01R 27/26

US Classification:

324663, 324637, 324639, 324601, 15634529, 15634547, 438 17

Abstract:

A plate of substantially uniform thickness is formed from an electrically conductive material. The plate has a top surface defined to support a part to be measured. The plate has a bottom surface defined to be connected to a radiofrequency (RF) transmission rod such that RF power can be transmitted through the RF transmission rod to the plate. The plate is defined to have a number of holes cut vertically through the plate at a corresponding number of locations that underlie embedded conductive material items in the part to be measured when the part is positioned on the top surface of the plate.

US Patent:

20150179453, Jun 25, 2015

Filed:

Feb 10, 2015

Appl. No.:

14/618498

Inventors:

- Armonk NY, US
- Coppell TX, US
- Grenoble Cedex 9, FR
ALI KHAKIFIROOZ - LOS ALTOS CA, US
YANNICK LE TIEC - CROLLES, FR
QING LIU - GUILDERLAND NY, US
MAUD VINET - RIVES SUR FURE, FR

International Classification:

H01L 21/225
H01L 21/761
H01L 29/66
H01L 21/762

Abstract:

Methods for semiconductor fabrication include forming a well in a semiconductor substrate. A pocket is formed within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket. Defects are created at the p-n junction such that a leakage resistance of the p-n junction is decreased.

US Patent:

20140312461, Oct 23, 2014

Filed:

Apr 19, 2013

Appl. No.:

13/866077

Inventors:

- Armonk NY, US
- Coppell TX, US
Ali Khakifirooz - Mountain View CA, US
Yannick Le Tiec - Crolles, FR
Qing Liu - Guilderland NY, US
Maud Vinet - Rives Sur Fure, FR

Assignee:

International Business Machines Corporation - Armonk NY
Commissariat A L'Energie Atomique Et Aux Energies Alternatives - Grenoble Cedex 9
STMicroelectronics, Inc. - Coppell TX

International Classification:

H01L 21/761
H01L 29/06

US Classification:

257544, 438527

Abstract:

Methods for semiconductor fabrication include forming a well in a semiconductor substrate. A pocket is formed within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket. Defects are created at the p-n junction such that a leakage resistance of the p-n junction is decreased.