Qing Wang

US Patent:

6350298, Feb 26, 2002

Filed:

Oct 26, 1999

Appl. No.:

09/426994

Inventors:

Bao-Lian Su - Saint-Servais, BE
Martin Bulow - Basking Ridge NJ
Jean-Luc Blin - Denain, FR
Adeola F. Ojo - Scotch Plains NJ
Sudhakar Jale - Scotch Plains NJ
Dongmin Shen - Berkeley Heights NJ
Qing Min Wang - North Plainfield NJ
Frank R. Fitch - Bedminster NJ

Assignee:

The BOC Group, Inc. - Murray Hill NJ

International Classification:

B01D 53047

US Classification:

95 96, 95129, 95130, 95139, 95140, 95902, 96108

Abstract:

Novel compositions of molecular sieve adsorbents are provided in which at least 50% of the exchangeable cations are selected from those of Li, Ca, Ag and Cu and which have within their pore system metal oxide, metal oxide precursors or mixtures thereof. These compositions are useful for the separation of gases and, in particular, the separation of nitrogen from air to produce oxygen or oxygen-enriched gas.

US Patent:

6436171, Aug 20, 2002

Filed:

Jun 12, 2000

Appl. No.:

09/592351

Inventors:

Qing Min Wang - North Plainfield NJ
Dongmin Shen - Berkeley Heights NJ
Miu Ling Lau - Edison NJ
Frank R. Fitch - Bedminster NJ
Norberto O. Lemcoff - Livingston NJ
Philip Connolly - Philadelphia PA

Assignee:

The BOC Group, Inc. - Murray Hill NJ

International Classification:

B01D 53047

US Classification:

95 96, 95 99, 95138, 95900, 96108, 423219

Abstract:

The present invention provides for novel solid state O -selective metal complex-based adsorbents and their utility for separating oxygen from a gas stream. In particular, the invention provides for an adsorption complex which contains four-coordinate O -selective metal complexes including oligomeric/polymeric metal complexes, and organic base-containing polymers supported on porous materials.

US Patent:

6440876, Aug 27, 2002

Filed:

Oct 5, 2001

Appl. No.:

09/971837

Inventors:

Qing Min Wang - Edison NJ
Ce Ma - Apex NC

Assignee:

The BOC Group, Inc. - Murray Hill NJ

International Classification:

H01L 2131

US Classification:

438778, 438783, 438789

Abstract:

Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated circuits are disclosed. A SiâOâC-in-ring cyclic siloxane precursor compound is applied to the surface by chemical vapor deposition where it will react with the surface and form a film having a dielectric constant, k, less than 2. 5. The compound generally has the formula (âOâR âOâ)SiR R or the formula (âR âOâ)SiR R.

US Patent:

6491740, Dec 10, 2002

Filed:

Jul 11, 2000

Appl. No.:

09/613735

Inventors:

Qing Min Wang - North Plainfield NJ
Dongmin Shen - Berkeley Heights NJ
Miu Ling Lau - Edison NJ
Frank R. Fitch - Bedminster NJ
Shuguang Deng - Somerville NJ

Assignee:

The BOC Group, Inc. - Murray Hill NJ

International Classification:

B01D 5302

US Classification:

95 90, 95 96, 95116, 95117, 95121, 95126, 95129, 95139, 95140, 95143, 95144, 95148, 95900, 502400, 502401, 502406

Abstract:

The present invention provides for methods and compositions for gas separation and purification utilizing a metallo-organic polymer adsorbent in processes for separating carbon dioxide, water, nitrogen oxides and hydrocarbons from gas streams. The metallo-organic polymer adsorbent composition has the formula: wherein R represents an organic spacer selected from the group consisting of an organic cyclic or acyclic compound; L represents a ligation group substituted on the organic spacer selected from the group consisting of carboxylate group, âC( O)O ; dithiocarboxylate group, âC( S)S ; and -diketonate group, âC( O)C(Râ) C(âO )â, wherein Râ H, or an aliphatic or aromatic group; M represents a transition metal or a rare earth metal selected from the group consisting of I to VIIB and VIII metals; m is the oxidation state of transition metal; and n is the number of the ligation group substituted on the organic spacer.

US Patent:

6649540, Nov 18, 2003

Filed:

Nov 2, 2001

Appl. No.:

10/002042

Inventors:

Qing Min Wang - Edison NJ
Ce Ma - Apex NC

Assignee:

The BOC Group, Inc. - Murray Hill NJ

International Classification:

H01L 2131

US Classification:

438789, 438780, 438788

Abstract:

Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated surfaces are disclosed. A substituted organosilane compound precursor is applied to the surface by chemical vapor deposition where it will react with the surface and form a film which will have a dielectric constant, K, less than 2. 5. The substituted organosilane compounds have the general formula: where, R is selected from the group consisting of a cyclic or acyclic hydrocarbon having from one carbon to eight carbon atoms; R , R and R are the same or different, and are selected from the groups consisting of H, CH , vinyl or other hydrocarbon containing two or more carbon atoms; R , R , R , R , R , R are a cyclic or acyclic hydrocarbon group including H, and can be the same or different, having from one carbon to eight carbon atoms; Râ is a linking group between the two silicon atoms, and can be a cyclic or acyclic hydrocarbon group, having from one carbon to six carbon atoms; R is a chelate hydrocarbon group containing two or more carbon atoms, R and R are a cyclic or acyclic hydrocarbon group including H, and can be the same or different.

US Patent:

6790364, Sep 14, 2004

Filed:

Sep 27, 2002

Appl. No.:

10/256861

Inventors:

Qing Min Wang - Edison NJ
Juzer Jangbarwala - Chino Hills CA

Assignee:

The BOC Group, Inc. - New Providence NJ

International Classification:

B01D 1500

US Classification:

210668, 210673, 210691, 210692, 210694

Abstract:

A process for separation and environmentally benign disposal of amine borane complexes includes adsorbing amine borane complex onto a solid support, treating the adsorbed amine borane complex with an oxidizing agent in situ on the adsorbent thereby forming decomposition products without the formation of hydrogen gas, and collecting the decomposition products for disposal thereof.

US Patent:

7065112, Jun 20, 2006

Filed:

May 12, 2003

Appl. No.:

10/435197

Inventors:

Chuni Ghosh - West Windsor NJ, US
Laurence S. Watkins - Pennington NJ, US
Qing Wang - Plainsboro NJ, US
Raymond William Simpson - Hamilton Square NJ, US
Steven R Leffler - Lawrenceville NJ, US

Assignee:

Princeton Optronics, Inc. - Mercerville NJ

International Classification:

H01S 3/13
H01S 3/10

US Classification:

372 32, 372 20

Abstract:

A wavelength locker comprising a semiconductor or air gap etalon is used to monitor and maintain the output wavelength of a coherent radiation source. Said etalon may be fabricated from a commercially available silicon wafer, with individual regions of the wafer, each functioning as a separate etalon, etched or otherwise processed to produce different thicknesses. Illumination by the coherent radiation source generated transmitted signal intensities that are detected and processed to determine the output wavelength of the coherent radiation source. A wavelength tuner is then used to maintain or vary the output wavelength based on continuous measurements of etalon signal intensity.

US Patent:

20040187731, Sep 30, 2004

Filed:

Apr 14, 2004

Appl. No.:

10/823982

Inventors:

Qing Wang - North Plainfield NJ, US
Weiji Huang - Bound Brook NJ, US
Miu Lau - Edison NJ, US
Carol Liu - Union NJ, US
Ce Ma - Apex NC, US
Edward Chang - Gillette NJ, US
Wenpin Ho - North Arlington NJ, US
Richard Paciej - Gladstone NJ, US

International Classification:

C25D005/02

US Classification:

106/001130, 205/291000

Abstract:

Improved acid copper electroplating bath compositions are disclosed. The improved bath solutions contain at least one of a carrier; a water-soluble, mercapto-containing organic brightener; and a leveler which comprises an organic compound containing single or multiply charged centers in acidic bath solution. These electroplating bath compositions are used to copper plate advanced interconnects on semiconductor devices.