Quan P Chau

US Patent:

20100108261, May 6, 2010

Filed:

Oct 30, 2009

Appl. No.:

12/609377

Inventors:

Jason Augustino - Fremont CA, US
Quan Chau - San Jose CA, US
Keith William Gaff - Fremont CA, US
Hanh Tuong Ha - San Jose CA, US
Brett C. Richardson - San Ramon CA, US
Harmeet Singh - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23F 1/08
H01L 21/306

US Classification:

1563451

Abstract:

A lower electrode assembly for use in a plasma processing chamber comprises a metal base and upper and lower edge rings. The metal base comprises metal plates brazed together and forming a brazed line on a lower side surface of the base, an edge ring support surface extending horizontally inwardly from the lower side surface and an upper side surface above the edge ring support surface. The upper edge ring comprises a lower surface mounted on the edge ring support surface and the lower edge ring surrounds the lower side surface of the base with a gap between opposed surfaces of the upper and lower edge rings and between the lower edge ring and the outer periphery of the base. The gap has an aspect ratio of total gap length to average gap width sufficient to impede arcing at the location of the braze line.

US Patent:

20170098566, Apr 6, 2017

Filed:

Oct 5, 2015

Appl. No.:

14/875473

Inventors:

- Fremont CA, US
Alex Paterson - San Jose CA, US
Ying Wu - Dublin CA, US
Quan Chau - San Jose CA, US

International Classification:

H01L 21/683
H02N 13/00

Abstract:

Apparatuses, systems, and techniques for providing enhanced electrostatic chucks are provided. Such apparatuses, systems, and techniques may include, for example, a common RF and DC electrode in an electrostatic chuck, connection, at a location external to a semiconductor processing chamber, of a high-voltage DC power source and a high-voltage RF power source to a common conductive pathway leading to an electrostatic chuck in the interior of the semiconductor processing chamber, a very thin dielectric layer located on an upper surface of an electrostatic chuck, and/or an axial thermal choke that may be used to control heat flow within an electrostatic chuck.