Quan B Li

US Patent:

20180182714, Jun 28, 2018

Filed:

Dec 18, 2017

Appl. No.:

15/845256

Inventors:

- Chandler AZ, US
Quan Bang LI - Gilbert AZ, US

Assignee:

EVERSPIN TECHNOLOGIES, INC. - Chandler AZ

International Classification:

H01L 23/552
H01L 49/02
H01L 21/56
H01L 21/28
H01L 23/28
H01L 23/13
H01L 23/00
H05K 1/02
G11C 16/04
G11C 17/08

Abstract:

The present disclosure is drawn to, among other things, a method of forming a semiconductor shield from a stock material having a thickness. In some aspects the methods includes providing a first layer of material on a first surface of the stock material, wherein at least a portion of the first layer of material includes a first window that exposes a portion of the first surface; providing a second layer of material on a second surface of the stock material, wherein the second surface of the stock material is spaced from the first surface by the thickness of the stock material, and wherein at least portion of the second layer of material includes a second window that exposes a portion of the second surface; and selectively removing a portion of the stock material exposed at the first or second windows, wherein the portion removed includes less than an entirety of the thickness of the stock material.