Ralph S Mohr
age ~62
from Farmington Hills, MI
- Also known as:
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- Ralph Stanley Mohr
- Ralph E Mohr
- Ralph A Mohr
- Ralph J Mohr
- Julianne E Mohr
- Robin Sue Mohr
- Robin Mohr
- Mohr Ralph
- Ralph Moore
- Julianne Mohv
Ralph Mohr Phones & Addresses
- Farmington Hills, MI
- Bradenton, FL
- Trout Creek, MI
- Houston, TX
- 1604 Lauder Ln, Walled Lake, MI 48390 • (248)6248022
- 1140 Lakeview Dr, Walled Lake, MI 48390 • (248)6242471
- Wolverine Lake, MI
- Pinckney, MI
- Commerce Township, MI
- Wixom, MI
Work
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Company:Ralph M. Mohr, Esq.
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Address:
Name / Title
Company / Classification
Phones & Addresses
RALPH E MOHR, CMIYC, LLC
DAMA INTERNATIONAL CENTRAL OHIO CHAPTER
Us Patents
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Boron Doped Semiconductor Materials And Method For Producing Same
view source -
US Patent:47696826, Sep 6, 1988
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Filed:Apr 20, 1987
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Appl. No.:7/039888
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Inventors:Chi C. Yang - Troy MI
Ralph Mohr - Detroit MI
Stephen Hudgens - Southfield MI
Annette Johncock - Walled Lake MI
Prem Nath - Rochester MI -
Assignee:Energy Conversion Devices, Inc. - Troy MI
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International Classification:H01L 4580
H01L 29167 -
US Classification:357 2
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Abstract:An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r. f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.
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Method For The Microwave Fabrication Of Boron Doped Semiconductor Materials
view source -
US Patent:47569247, Jul 12, 1988
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Filed:Apr 10, 1986
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Appl. No.:6/850190
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Inventors:Chi C. Yang - Troy MI
Ralph Mohr - Detroit MI
Stephen Hudgens - Southfield MI
Annette Johncock - Walled Lake MI
Prem Nath - Rochester MI -
Assignee:Energy Conversion Devices, Inc. - Troy MI
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International Classification:B05D 306
B05D 302 -
US Classification:427 39
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Abstract:A microwave glow discharge method for the deposition of p-doped semiconductor alloy material, which material is characterized by mono-atomic and tetrahedral incorporation of boron species into the semiconductor host matrix, thereby providing a p-doped semiconductor alloy material characterized by reduced bulk strain, reduced nucleation of undesirable morphological growth, improved adhesion to a substrate and reduced peeling and cracking.
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Boron Doped Semiconductor Materials And Method For Producing Same
view source -
US Patent:46248625, Nov 25, 1986
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Filed:Nov 5, 1984
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Appl. No.:6/668435
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Inventors:Chi C. Yang - Troy MI
Ralph Mohr - Detroit MI
Stephen Hudgens - Southfield MI
Annette Johncock - Walled Lake MI
Prem Nath - Rochester MI -
Assignee:Energy Conversion Devices, Inc. - Troy MI
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International Classification:H01L 3104
B05D 512 -
US Classification:427 74
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Abstract:An improved p-type semiconductor alloy film, an improved substantially intrinsic amorphous semiconductor alloy film, improved photovoltaic and photoresponsive devices incorporating such films and r. f. and microwave glow discharge methods for fabricating same. The improved semiconductor alloy films preferably include at least silicon deposited by the glow discharge of a compound containing at least silicon and a boron species that remains substantially monoatomic as it is incorporated into the silicon matrix. The p-type film is particularly stable, is characterized by a non-narrowed band gap, reduced bulk stress, improved morphology, growth and adhesion and reduced peeling and cracking. The substantially intrinsic film is characterized by substantially reduced Staebler-Wronski degradation. The method includes the novel step of introducing a boron species that does not form higher order boron hydrides or other boron polymers or oligomers in the glow discharge plasma.
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Narrow Band Gap Photovoltaic Devices With Enhanced Open Circuit Voltage
view source -
US Patent:44711557, Sep 11, 1984
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Filed:Apr 15, 1983
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Appl. No.:6/485411
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Inventors:Ralph Mohr - Detroit MI
Vincent D. Cannella - Detroit MI -
Assignee:Energy Conversion Devices, Inc. - Troy MI
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International Classification:H01L 3106
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US Classification:136258
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Abstract:The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device includes a pair of doped regions and an intrinsic body between the doped regions. The intrinsic body includes a first intrinsic region and an open circuit voltage enhancement means including a second intrinsic region. The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.
Lawyers & Attorneys
Ralph Mohr - Lawyer
view sourceOffice:
Ralph M. Mohr, Esq.
ISLN:
910552903
Admitted:
1980
Law School:
State University of New York Law School at Buffalo, J.D.
Resumes
Ralph Mohr
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Ralph Mohr
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Ralph Mohr
Ralph Mohr
News
Some Polling Places Different This Election Day
view source- count. "The courts have said that if they show up at the right polling location but are at the wrong table within the location, that that vote counts, if they show up at the wrong location, in most instances it will not count," said Ralph Mohr, the Republican Board of Elections Commissioner. &"The courts have said that if they show up at the right polling location but are at the wrong table within the location, that that vote counts, if they show up at the wrong location, in most instances it will not count," said Ralph Mohr, the Republican Board of Elections Commissioner.
- Date: Nov 07, 2011
- Category: U.S.
- Source: Google
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