Randy W Mercil

US Patent:

7192487, Mar 20, 2007

Filed:

Oct 28, 2003

Appl. No.:

10/695727

Inventors:

Craig M. Carpenter - Boise ID, US
Ross S. Dando - Nampa ID, US
Allen P. Mardian - Boise ID, US
Kevin T. Hamer - Meridian ID, US
Raynald B. Cantin - Boise ID, US
Philip H. Campbell - Meridain ID, US
Kimberly R. Tschepen - Corvallis OR, US
Randy W. Mercil - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

C23C 16/00
C23F 1/00
H01L 21/301

US Classification:

118715, 118719, 15634531, 15634532, 15634529

Abstract:

A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative.

US Patent:

7229666, Jun 12, 2007

Filed:

Aug 6, 2004

Appl. No.:

10/912878

Inventors:

Allen P. Mardian - Boise ID, US
Philip H. Campbell - Meridian ID, US
Craig M. Carpenter - Boise ID, US
Randy W. Mercil - Boise ID, US
Sujit Sharan - Chandler AZ, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

C23C 16/00

US Classification:

4272481, 42725523, 117 84, 118719

Abstract:

Methods of chemical vapor deposition include providing a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. At least one process chemical inlet to the deposition chamber is included. A substrate is positioned within the chamber and a process gas is provided over the substrate effective to deposit material onto the substrate. While providing the process gas, a purge gas is emitted into the chamber from a plurality of purge gas inlets comprised by at least one chamber wall surface. The purge gas inlets are separate from the at least one process chemical inlet and the emitting forms an inert gas curtain over the chamber wall surface.

US Patent:

7468104, Dec 23, 2008

Filed:

May 17, 2002

Appl. No.:

10/150388

Inventors:

Allen P. Mardian - Boise ID, US
Philip H. Campbell - Meridian ID, US
Craig M. Carpenter - Boise ID, US
Randy W. Mercil - Boise ID, US
Sujit Sharan - Chandler AZ, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

C23C 16/455
C23F 1/00
H01L 21/306
C23C 16/44

US Classification:

118715, 118728, 15634533

Abstract:

A chemical vapor deposition apparatus includes a deposition chamber defined at least in part by at least one of a chamber sidewall and a chamber base wall. A substrate holder is received within the chamber. At least one process chemical inlet to the deposition chamber is included. At least one of the chamber sidewall and chamber base wall includes a chamber surface having a plurality of purge gas inlets to the chamber therein. The purge gas inlets are separate from the at least one process chemical inlet. A purge gas inlet passageway is provided in fluid communication with the purge gas inlets. Further implementations, including deposition method implementations, are contemplated.

US Patent:

20020129768, Sep 19, 2002

Filed:

Mar 15, 2001

Appl. No.:

09/810387

Inventors:

Craig Carpenter - Boise ID, US
Ross Dando - Nampa ID, US
Philip Campbell - Meridian ID, US
Allen Mardian - Boise ID, US
Jeff Fuss - Meridian ID, US
Randy Mercil - Boise ID, US

International Classification:

C23C016/00
C30B029/00

US Classification:

118/715000, 427/248100

Abstract:

A chemical vapor deposition (CVD) apparatus includes a deposition chamber defined partly by a chamber wall. The chamber wall has an innermost surface inside the chamber and an outermost surface outside the chamber. The apparatus further includes a valve body having a seat between the innermost and outermost surfaces of the chamber wall. The chamber wall can be a lid and the valve can include a portion of the lid as at least a part of the seat. The valve body can include at least a part of a valve housing between the innermost and outermost surfaces of the chamber wall. Such a valve body can even include a portion of the chamber wall as at least part of the valve housing. The deposition apparatus can further include at least a part of a process chemical inlet to the valve body between the innermost and outermost surfaces of the chamber wall. In one example, the chamber wall can form at least a part of the chemical inlet. A deposition method includes temporarily isolating a process chemical supply line from a deposition chamber at a chamber wall of the deposition chamber. While isolated at the chamber wall, the supply line can be filled to a first pressure with chemical through a supply valve upstream from the chamber wall. The chemical can be released from the supply line into the deposition chamber at the chamber wall. The supply line can be again temporarily isolated from the deposition chamber at the chamber wall.

US Patent:

20030159780, Aug 28, 2003

Filed:

Feb 22, 2002

Appl. No.:

10/082599

Inventors:

Craig Carpenter - Boise ID, US
Ross Dando - Nampa ID, US
Allen Mardian - Boise ID, US
Kevin Hamer - Meridian ID, US
Raynald Cantin - Boise ID, US
Philip Campbell - Meridian ID, US
Kimberly Tschepen - Boise ID, US
Randy Mercil - Boise ID, US

International Classification:

C23F001/00
C23C016/00

US Classification:

156/345310, 118/719000

Abstract:

A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

US Patent:

20030221616, Dec 4, 2003

Filed:

May 28, 2002

Appl. No.:

10/156382

Inventors:

Craig Carpenter - Boise ID, US
Ross Dando - Nampa ID, US
Randy Mercil - Boise ID, US
Philip Campbell - Meridian ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

C23C016/00

US Classification:

118/715000, 156/345290, 251/065000

Abstract:

A pressure-regulating device for use with a vapor reaction chamber, and methods of its use, are disclosed. In one embodiment according to the invention, the device comprises a magnetically-actuatable valve having an aperture, a plug containing a plug magnet within the valve, a magnet disposed around the valve and magnetically associated with the plug magnet, and an actuator associated with the magnet. The actuator moves the magnet to magnetically bias the plug magnet thereby moving the plug into and out of sealing engagement with the aperture and regulating pressure within the reaction chamber. Plug movement is achieved without interconnecting mechanical parts disposed through the body of the valve that provide surfaces on which adduct, from depositing vaporous by-product material, can accumulate. Since magnetic interaction moves the plug rather than mechanical parts attached to the valve body, build-up of adduct on the internal surfaces of the valve is reduced.

US Patent:

20040237895, Dec 2, 2004

Filed:

Jul 1, 2004

Appl. No.:

10/882422

Inventors:

Craig Carpenter - Boise ID, US
Ross Dando - Nampa ID, US
Randy Mercil - Boise ID, US
Philip Campbell - Meridian ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

C23C016/00

US Classification:

118/715000

Abstract:

A pressure-regulating device for use with a vapor reaction chamber, and methods of its use, are disclosed. In one embodiment according to the invention, the device comprises a magnetically-actuatable valve having an aperture, a plug containing a plug magnet within the valve, a magnet disposed around the valve and magnetically associated with the plug magnet, and an actuator associated with the magnet. The actuator moves the magnet to magnetically bias the plug magnet thereby moving the plug into and out of sealing engagement with the aperture and regulating pressure within the reaction chamber. Plug movement is achieved without interconnecting mechanical parts disposed through the body of the valve that provide surfaces on which adduct, from depositing vaporous by-product material, can accumulate. Since magnetic interaction moves the plug rather than mechanical parts attached to the valve body, build-up of adduct on the internal surfaces of the valve is reduced.

US Patent:

20050241581, Nov 3, 2005

Filed:

Jul 5, 2005

Appl. No.:

11/175523

Inventors:

Craig Carpenter - Boise ID, US
Ross Dando - Nampa ID, US
Philip Campbell - Meridian ID, US
Allen Mardian - Boise ID, US
Jeff Fuss - Meridian ID, US
Randy Mercil - Boise ID, US

International Classification:

C23C016/00

US Classification:

118715000, 427248100

Abstract:

A chemical vapor deposition (CVD) apparatus includes a deposition chamber defined partly by a chamber wall. The chamber wall has an innermost surface inside the chamber and an outermost surface outside the chamber. The apparatus further includes a valve body having a seat between the innermost and outermost surfaces of the chamber wall. The chamber wall can be a lid and the valve can include a portion of the lid as at least a part of the seat. The valve body can include at least a part of a valve housing between the innermost and outermost surfaces of the chamber wall. Such a valve body can even include a portion of the chamber wall as at least part of the valve housing. The deposition apparatus can further include at least a part of a process chemical inlet to the valve body between the innermost and outermost surfaces of the chamber wall. In one example, the chamber wall can form at least a part of the chemical inlet. A deposition method includes temporarily isolating a process chemical supply line from a deposition chamber at a chamber wall of the deposition chamber. While isolated at the chamber wall, the supply line can be filled to a first pressure with chemical through a supply valve upstream from the chamber wall. The chemical can be released from the supply line into the deposition chamber at the chamber wall. The supply line can be again temporarily isolated from the deposition chamber at the chamber wall.