Rebecca M Jones

US Patent:

8575473, Nov 5, 2013

Filed:

Sep 14, 2012

Appl. No.:

13/618496

Inventors:

Rebecca Elizabeth Jones - Mountain View CA, US
Homan Bernard Yuen - Sunnyvale CA, US
Ting Liu - Santa Clara CA, US
Pranob Misra - Milpitas CA, US

Assignee:

Solar Junction Corporation - San Jose CA

International Classification:

H01L 31/00

US Classification:

136255, 136262, 136249

Abstract:

An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0. 9 eV, namely, GaInNAsSbwith a low antimony (Sb) content and with enhanced indium (In) content, and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for GaInNAsSbare 0. 07≦x≦0. 18, 0. 025≦y≦0. 04 and 0. 001≦z≦0. 03.

US Patent:

20110232730, Sep 29, 2011

Filed:

Mar 29, 2010

Appl. No.:

12/749076

Inventors:

Rebecca Elizabeth Jones - Mountain View CA, US
Homan Bernard Yuen - Sunnyvale CA, US
Ting Liu - Santa Clara CA, US
Pranob Misra - Milpitas CA, US

Assignee:

Solar Junction Corp. - San Jose CA

International Classification:

H01L 31/0304
C22C 30/00
H01L 31/18

US Classification:

136255, 420580, 438 94, 257E31022

Abstract:

An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, GaInNAsSbwith a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for GaInNAsSbare 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.

US Patent:

20120103403, May 3, 2012

Filed:

Oct 28, 2010

Appl. No.:

12/914710

Inventors:

Pranob Misra - Stanford CA, US
Rebecca Elizabeth Jones - Mountain View CA, US
Ting Liu - San Jose CA, US
Ilya Fushman - Palo Alto CA, US
Homan Bernard Yuen - Sunnyvale CA, US

Assignee:

Solar Junction Corporation - San Jose CA

International Classification:

H01L 31/0288
H01L 31/18

US Classification:

136255, 438 57, 438478, 257E31014

Abstract:

A lattice-matched solar cell having a dilute nitride-based sub-cell has exponential doping to thereby control current-carrying capacity of the solar cell. Specifically a solar cell with at least one dilute nitride sub-cell that has a variably doped base or emitter is disclosed. In one embodiment, a lattice matched multi junction solar cell has an upper sub-cell, a middle sub-cell and a lower dilute nitride sub-cell, the lower dilute nitride sub-cell having doping in the base and/or the emitter that is at least partially exponentially doped so as to improve its solar cell performance characteristics. In construction, the dilute nitride sub-cell may have the lowest bandgap and be lattice matched to a substrate, the middle cell typically has a higher bandgap than the dilute nitride sub-cell while it is lattice matched to the dilute nitride sub-cell. The upper sub-cell typically has the highest bandgap and is lattice matched to the adjacent sub-cell. In further embodiments, a multi junction solar cell according to the invention may comprise four, five or more sub-cells in which the one or more sub-cells may each comprise exponentially doped dilute nitride alloys.