Richard G Carpenter

Address:

540 Twinflower Ct, Roswell, GA 30075

VIN:

1J8HS58P69C513771

Make:

JEEP

Model:

GRAND CHEROKEE

Year:

2009

US Patent:

6500350, Dec 31, 2002

Filed:

Feb 8, 2001

Appl. No.:

09/779990

Inventors:

Andrew T. Hunt - Atlanta GA
Wen-Yi Lin - Doraville GA
Shara S. Shoup - Woodstock GA
Richard W. Carpenter - Johnson City NY
Stephen E. Bottomley - Brea CA
Tzyy Jiuan Hwang - Alpharetta GA
Michelle Hendrick - Winder GA

Assignee:

Morton International, Inc. - Chicago IL

International Classification:

H01C 112

US Classification:

216 16, 216 20

Abstract:

A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etchant, and a layer of resistive material of sufficient porosity such that the chemical etchant for said intermediate layer may seep through the resistive material and chemically degrade said intermediate layer so that the resistive material may be ablated from said conductive layer wherever the intermediate layer is chemically degraded. A patterned photoresist layer is formed on the resistive material layer. The resistive material layer is exposed to the chemical etchant for said intermediate layer so that the etchant seeps through the porous resistive material layer and degrades the intermediate layer. Then, portions of the resistive material layer are ablated away wherever the intermediate layer has been degraded.

US Patent:

6632591, Oct 14, 2003

Filed:

Feb 12, 2001

Appl. No.:

09/781462

Inventors:

Andrew T. Hunt - Atlanta GA 30342
Wen-Yi Lin - Doraville GA 30340
Richard W. Carpenter - Johnson City NY 13790

International Classification:

G03F 700

US Classification:

430314, 430311, 430313, 430317, 430318, 430320

Abstract:

Nanolaminates are formed by alternating deposition, e. g. , by combustion chemical vapor deposition (CCVD), layers of resistive material and layers of dielectric material. Outer resistive material layers are patterned to form discrete patches of resistive material. Electrical pathways between opposed patches of resistive material on opposite sides of the laminate act as capacitors. Electrical pathways horizontally through resistive material layers, which may be connected by via plated holes, act as resistors.

US Patent:

62120786, Apr 3, 2001

Filed:

Oct 27, 1999

Appl. No.:

9/427767

Inventors:

Andrew T. Hunt - Atlanta GA
Wen-Yi Lin - Doraville GA
Richard W. Carpenter - Johnson City NY

Assignee:

MicroCoating Technologies - Chamblee GA

International Classification:

H05K 111

US Classification:

361793

Abstract:

Nanolaminates are formed by alternating deposition, e. g. , by combustion chemical vapor deposition (CCVD), layers of resistive material and layers of dielectric material. Outer resistive material layers are patterned to form discrete patches of resistive material. Electrical pathways between opposed patches of resistive material on opposite sides of the laminate act as capacitors. Electrical pathways horizontally through resistive material layers, which may be connected by via plated holes, act as resistors.

US Patent:

63298996, Dec 11, 2001

Filed:

Nov 24, 1998

Appl. No.:

9/198954

Inventors:

Andrew T. Hunt - Atlanta GA
Wen-Yi Lin - Doraville GA
Shara S. Shoup - Woodstock GA
Richard W. Carpenter - Johnson City NY
Stephen E. Bottomley - Brea CA
Tzyy Jiuan Hwang - Alpharetta GA
Michelle Hendrick - Winder GA

Assignee:

Microcoating Technologies, Inc. - Chamblee GA

International Classification:

H01L 1012

US Classification:

338308

Abstract:

A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etchant, and a layer of resistive material of sufficient porosity such that the chemical etchant for said intermediate layer may seep through the resistive material and chemically degrade said intermediate layer so that the resistive material may be ablated from said conductive layer wherever the intermediate layer is chemically degraded. A patterned photoresist layer is formed on the resistive material layer. The resistive material layer is exposed to the chemical etchant for said intermediate layer so that the etchant seeps through the porous resistive material layer and degrades the intermediate layer. Then, portions of the resistive material layer are ablated away wherever the intermediate layer has been degraded.

US Patent:

62105922, Apr 3, 2001

Filed:

Apr 29, 1998

Appl. No.:

9/069679

Inventors:

Andrew T. Hunt - Atlanta GA
Wen-Yi Lin - Doraville GA
Shara S. Shoup - Woodstock GA
Richard W. Carpenter - Johnson City NY

Assignee:

Morton International, Inc. - Chicago IL

International Classification:

H01C 112
H01B 1300

US Classification:

216 16

Abstract:

Resistors are formed by selective etching from layered thin film material comprising an insulating substrate, a resistive material which is a mixture of a zero valence metal and a dielectric material, and a layer of conductive material.