Richard M Farrell

US Patent:

8553572, Oct 8, 2013

Filed:

Sep 9, 2004

Appl. No.:

10/571189

Inventors:

Richard S. Farrell - Tyngsboro MA, US
David J. Reiland - Maple Grove MN, US
James R. Signorelli - Champlin MN, US

Assignee:

Hyperdata Technologies, Inc. - Maple Grove MN

International Classification:

H04L 12/26

US Classification:

370252, 370401, 370402, 370338, 370446, 709222, 709225

Abstract:

A method for optimizing the throughput of TCP/IP applications by aggregating user application data and consolidating multiple TCP/IP connection streams into a single optimized stream for delivery to a destination application. Optimization of the internet protocol uses a packet interceptor to intercept packets from a source application, a packet driver to aggregate the intercepted packets, a data mover to transport the aggregated packets to another data mover at the destination, a destination packet driver to disaggregate the transported aggregated packets, and a destination end processor to deliver the disaggregated IP packets to the destination application.

US Patent:

7268339, Sep 11, 2007

Filed:

Sep 27, 2005

Appl. No.:

11/238001

Inventors:

Richard Farrell - East Killingly CT, US
Kofi Vanderpuye - Sommerville MA, US

Assignee:

Radiation Monitoring Devices, Inc. - Watertown MA

International Classification:

H01L 31/00

US Classification:

2502141, 257438, 257496, 257E31063, 438 91, 438965

Abstract:

A method is provided for forming a semiconductor-detection device that provides internal gain. The method includes forming a plurality of bottom trenches in a bottom surface of an n-doped semiconductor wafer; and forming a second plurality of top trenches in a top surface of the semiconductor wafer. The bottom surface and the top surface are opposed surfaces. Each of the bottom trenches is substantially parallel to and substantially juxtaposed to an associated one of the top trenches. The method further includes doping the semiconductor wafer with at least one p-type dopant to form a p-region that defines at least one n-well within the p-region, wherein a p-n junction is formed substantially at an interface of the n-well and the p-region; and removing a portion of the bottom surface to form a remaining-bottom surface, wherein a portion of the n-well forms a portion of the remaining-bottom surface.