Richard W Hurtubise from 18 Mallard Ln, Clinton, CT 06413, age 77

Electroplating Chemistry For The Cu Filling Of Submicron Features Of Vlsi/Ulsi Interconnect
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US Patent:

6776893, Aug 17, 2004
Filed:

Nov 20, 2000
Appl. No.:

09/716975
Inventors:

Elena H. Too - Branford CT
Paul R. Gerst - Madison CT
Vincent Paneccasio, Jr. - Madison CT
Richard W. Hurtubise - Clinton CT
Assignee:

Enthone Inc. - West Haven CT
International Classification:

C25D 502
US Classification:

205123, 205118, 205157, 205296, 205298, 106 126
Abstract:

A copper electroplating bath and a method to plate substrates with the bath are provided. The bath and method are particularly effective to plate electronic components such as semiconductive wafer VLSI and ULSI interconnects with void-free fill copper plating for circuitry forming vias and trenches and other small features less than 0. 2 microns with high aspect ratios. The copper bath contains a bath soluble organic divalent sulfur compound, and a bath soluble polyether compound such as a block copolymer of polyoxyethylene and polyoxypropylene, a polyoxyethylene or polyoxypropylene derivative of a polyhydric alcohol and a mixed polyoxyethylene and polyoxypropylene derivative of a polyhydric alcohol. A preferred polyether compound is a mixed polyoxyethylene and polyoxypropylene derivative of glycerine. A preferred copper bath also contains a pyridine compound derivative.

Copper Electrodeposition In Microelectronics
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US Patent:

7303992, Dec 4, 2007
Filed:

Nov 14, 2005
Appl. No.:

11/272999
Inventors:

Vincent Paneccasio - Madison CT, US
Xuan Lin - Northford CT, US
Paul Figura - Orange CT, US
Richard Hurtubise - Clinton CT, US
Assignee:

Enthone Inc. - West Haven CT
International Classification:

H01L 21/31
US Classification:

438687, 438678
Abstract:

An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves superfilling by rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is substantially greater than Cu deposition on the side walls.

Defect Reduction In Electrodeposited Copper For Semiconductor Applications
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US Patent:

7316772, Jan 8, 2008
Filed:

Mar 5, 2002
Appl. No.:

10/091106
Inventors:

John Commander - Old Saybrook CT, US
Richard Hurtubise - Clinton CT, US
Vincent Paneccasio - Madison CT, US
Xuan Lin - New Haven CT, US
Kshama Jirage - Branford CT, US
Assignee:

Enthone Inc. - West Haven CT
International Classification:

C25D 5/02
C25D 3/38
US Classification:

205123, 205118, 205296
Abstract:

A method for electroplating a copper deposit onto a semiconductor integrated circuit device substrate having submicron-sized features, and a concentrate for forming a corresponding electroplating bath. A substrate is immersed into an electroplating bath formed from the concentrate including ionic copper and an effective amount of a defect reducing agent, and electroplating the copper deposit from the bath onto the substrate to fill the submicron-sized reliefs. The occurrence of protrusion defects from superfilling, surface roughness, and voiding due to uneven growth are reduced, and macro-scale planarity across the wafer is improved.

Cobalt And Nickel Electroless Plating In Microelectronic Devices
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US Patent:

7332193, Feb 19, 2008
Filed:

Mar 21, 2005
Appl. No.:

11/085304
Inventors:

Charles Valverde - Ansonia CT, US
Nicolai Petrov - Hamden CT, US
Eric Yakobson - Aliso Viejo CA, US
Qingyun Chen - Branford CT, US
Vincent Paneccasio, Jr. - Madison CT, US
Richard Hurtubise - Clinton CT, US
Christian Witt - Woodbridge CT, US
Assignee:

Enthone, Inc. - West Haven CT
International Classification:

C23C 18/16
C23C 18/36
C23C 18/32
US Classification:

427 995, 427437, 4274431
Abstract:

An electroless plating method and composition for depositing Co, Ni, or alloys thereof onto a metal-based substrate in manufacture of microelectronic devices, involving a source of deposition ions selected from the group consisting of Co ions and Ni ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and a hydrazine-based leveling agent.

Capping Of Metal Interconnects In Integrated Circuit Electronic Devices
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US Patent:

7393781, Jul 1, 2008
Filed:

Sep 10, 2007
Appl. No.:

11/852513
Inventors:

Eric Yakobson - Aliso Viejo CA, US
Richard Hurtubise - Clinton CT, US
Christian Witt - Woodbridge CT, US
Qingyun Chen - Branford CT, US
Assignee:

Enthone Inc. - West Haven CT
International Classification:

H01L 21/44
US Classification:

438653, 438656, 438659, 438672, 438674
Abstract:

A multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap.

Defectivity And Process Control Of Electroless Deposition In Microelectronics Applications
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US Patent:

7410899, Aug 12, 2008
Filed:

Sep 20, 2005
Appl. No.:

11/230912
Inventors:

Qingyun Chen - Branford CT, US
Charles Valverde - Ansonia CT, US
Vincent Paneccasio - Madison CT, US
Nicolai Petrov - Hamden CT, US
Daniel Stritch - West Haven CT, US
Christian Witt - Woodbridge CT, US
Richard Hurtubise - Clinton CT, US
Assignee:

Enthone, Inc. - West Haven CT
International Classification:

H01L 21/3205
US Classification:

438678, 438761, 438776, 438782, 257635, 257766, 20415745, 2041575, 204633
Abstract:

Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Defectivity And Process Control Of Electroless Deposition In Microelectronics Applications
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US Patent:

7611987, Nov 3, 2009
Filed:

Oct 5, 2005
Appl. No.:

11/243624
Inventors:

Qingyun Chen - Branford CT, US
Charles Valverde - Ansonia CT, US
Vincent Paneccasio - Madison CT, US
Nicolai Petrov - Hamden CT, US
Daniel Stritch - West Haven CT, US
Christian Witt - Woodbridge CT, US
Richard Hurtubise - Clinton CT, US
Assignee:

Enthone Inc. - West Haven CT
International Classification:

H01L 21/44
US Classification:

438678, 438761, 438778, 438782, 257635, 257766, 20415745, 2041575, 204633
Abstract:

Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Defectivity And Process Control Of Electroless Deposition In Microelectronics Applications
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US Patent:

7611988, Nov 3, 2009
Filed:

Oct 5, 2005
Appl. No.:

11/243631
Inventors:

Qingyun Chen - Branford CT, US
Charles Valverde - Ansonia CT, US
Vincent Paneccasio - Madison CT, US
Nicolai Petrov - Hamden CT, US
Daniel Stritch - West Haven CT, US
Christian Witt - Woodbridge CT, US
Richard Hurtubise - Clinton CT, US
Assignee:

Enthone Inc. - West Haven CT
International Classification:

H01L 21/44
US Classification:

438678, 438761, 438778, 438782, 257635, 257766, 20415745, 2041575, 204633
Abstract:

Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.