Richard G Roybal

US Patent:

20130105904, May 2, 2013

Filed:

Nov 1, 2011

Appl. No.:

13/286293

Inventors:

RICHARD G. ROYBAL - ARLINGTON TX, US
SHARIQ ARSHAD - MURPHY TX, US
SHAOPING TANG - ALLEN TX, US
JAMES FRED SALZMAN - ANNA TX, US

Assignee:

TEXAS INSTRUMENTS INCORPORATED - Dallas TX

International Classification:

H01L 27/092
H01L 21/8238

US Classification:

257369, 438199, 257E21632, 257E27062

Abstract:

A method of forming an integrated circuit (IC) includes providing a substrate having a topside semiconductor surface, wherein the topside semiconductor surface includes at least one of N+ buried layer regions and P+ buried layer regions. An epitaxial layer is grown on the topside semiconductor surface. Pwells are formed in the epitaxial layer. Nwells are formed in the epitaxial layer. NMOS devices are formed in and over the pwells, and PMOS devices are formed in and over the nwells.

US Patent:

20170373174, Dec 28, 2017

Filed:

Jun 25, 2016

Appl. No.:

15/193015

Inventors:

- Dallas TX, US
Randolph William Kahn - McKinney TX, US
Richard Guerra Roybal - Denton TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 29/735
H01L 21/265
H01L 29/08
H01L 29/66

Abstract:

Disclosed examples include integrated circuits and bipolar transistors with a first region of a first conductivity type in a substrate, a collector region of a second conductivity type disposed in the substrate, and a base region of the first conductivity type extending into the first region. A first emitter region of the second conductivity type extends into the first region and includes a lateral side spaced from and facing the base region. A second emitter region of the second conductivity type extends downward into the first region, abutting the top surface and an upper portion of the first lateral side of the first emitter region to mitigate surface effects and gain degradation caused by hydrogen injection from radiation to provide a radiation hardened bipolar transistor.

US Patent:

20140124895, May 8, 2014

Filed:

Nov 6, 2013

Appl. No.:

14/073777

Inventors:

- Dallas TX, US
Richard Guerra ROYBAL - Denton TX, US
Randolph William KAHN - McKinney TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 29/73
H01L 21/265
H01L 29/66

US Classification:

257592, 438350

Abstract:

A semiconductor device containing an NPN bipolar junction transistor may be formed by forming a p-type radiation induced diode structure (RIDS) region in an intrinsic p-type base region of the NPN bipolar junction transistor at a boundary of the intrinsic p-type base region with a dielectric layer over a substrate of the semiconductor device, between an emitter of the NPN bipolar junction transistor and an extrinsic p-type base region of the NPN bipolar junction transistor. The p-type RIDS region has a doping density high enough to prevent inversion of a surface of the p-type RIDS region adjacent to the dielectric layer when trapped charge is accumulated in the dielectric layer, while the intrinsic p-type base region may invert from the trapped charge forming the radiation induced diode structure. The p-type RIDS region is separated from the emitter and from the extrinsic base region by portions of the intrinsic base region.