Robert D Burnham

US Patent:

7990266, Aug 2, 2011

Filed:

Sep 9, 2010

Appl. No.:

12/878583

Inventors:

Robert Burnham - Idaho Springs CO, US
Cliff Howard - Dacono CO, US
Susan Love - Broomfield CO, US
Paul Madsen - Englewood CO, US
John Rishea - Denver CO, US

Assignee:

Avaya Inc. - Basking Ridge NJ

International Classification:

G08B 1/08

US Classification:

34053913, 34053926, 340988, 340994, 3409951, 701117, 701202, 701206, 701207, 701213

Abstract:

An automatic appointment reminder system uses location and/or direction of travel of the reminder recipient relative to appointments to affect the time of sending of appointment reminders to the user, and thus enhances the user's ability to be on-time for appointments.

US Patent:

8064487, Nov 22, 2011

Filed:

Apr 17, 2006

Appl. No.:

11/406054

Inventors:

James Lee Armstrong - Arvada CO, US
Robert D. Burnham - Idaho Springs CO, US
Cliff L. Howard - Dacono CO, US
Susan K. Love - Broomfield CO, US
Paul Michael Madsen - Denver CO, US
John Vincent Rishea - Denver CO, US

Assignee:

Avaya Inc. - Basking Ridge NJ

International Classification:

H04J 99/00
H04L 12/28
H04M 3/42

US Classification:

370546, 370259, 37920101

Abstract:

Systems and methods for providing a communication bridge between a physical location and a virtual location are provided. In particular, the presence of a visitor to a physical location is detected, and notification of the presence of a visitor is provided to a user associated with the physical location. The notification may include an identification of the visitor. Following notification, real-time communications between the visitor at the first physical location and the user at the virtual location are established, without requiring entry of a communication address for the virtual office of the user by the visitor.

US Patent:

8510472, Aug 13, 2013

Filed:

Sep 27, 2007

Appl. No.:

11/862384

Inventors:

Jeffrie D. Anderson - Arvada CO, US
Robert D. Burnham - Idaho Springs CO, US
Brijen Doshi - Thornton CO, US
Susan K. Love - Broomfield CO, US
John V. Rishea - Denver CO, US
John M. Swanagon - Highlands Ranch CO, US

Assignee:

Avaya Inc. - Basking Ridge NJ

International Classification:

G06F 12/00

US Classification:

709245, 709206, 709223

Abstract:

The present invention provides methods, devices, and systems for managing message distribution lists. More specifically, the message distribution list may be location-specific and the recipients listed in the list may be dynamically updated based on their detected presence with respect to a particular location. By dynamically updating a message distribution list based on presence information, recipients of the message can be provided with a greater assurance that the messages they receive are locally relevant.

US Patent:

48247987, Apr 25, 1989

Filed:

Nov 5, 1987

Appl. No.:

7/117593

Inventors:

Robert D. Burnham - Wheaton IL
Robert L. Thornton - East Palo Alto CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

H01L 21265
H01L 21203

US Classification:

437 81

Abstract:

A thin film bilayer composite source comprises a deposited impurity source layer, e. g. Si or Sb, heavily doped with a diffusion enabling agent, e. g. As, and capped with a passivating layer, e. g. Si. sub. 3 N. sub. 4, SiO. sub. 2, AlN or SiO. sub. x N. sub. y. In a preferred embodiment, a thin film bilayer composite source comprises a Si layer on the surface of said structure vapor deposited at a temperature in excess of 500. degree. C. in the presence of a source of As to hevily dope the layer in the range of 5%-20% atomic weight and a thin cap layer of Si. sub. 3 N. sub. 4 deposited on the Si layer at a temperature in excess of 500. degree. C. having a thickness only sufficient to prevent the outdiffusion of Ga and As, which thickness may be about 400. ANG. -700. ANG. An important aspect of the employment of this bilayer composite source as a diffusion source for III-V structures is that the composite source is initially deposited at high temperatures, above 500. degree. 0 C. , i. e. , at temperatures that are into the range of annealing temperature, e. g.

US Patent:

48036919, Feb 7, 1989

Filed:

Aug 28, 1987

Appl. No.:

7/090333

Inventors:

Donald R. Scifres - San Jose CA
Hsing Kung - Sunnyvale CA
Peter Cross - Palo Alto CA
Robert D. Burnham - Wheaton IL
William Streifer - Palo Alto CA

Assignee:

Spectra Diode Laboratories, Inc. - San Jose CA

International Classification:

H01S 319

US Classification:

372150

Abstract:

A diode laser bar producing a linear array of laser beams without lateral superradiance. The laser bar has a double-heterostructure or quantum well structure. Etched channels in the substrate create lateral corrugations in the subsequently deposited layers including the active region. The corrugations alternate between offset groove and plateau regions in the lateral direction but are straight in the longitudinal light propagating direction. Any laterally propagating light is interrupted at steps, between groove and plateau regions, by deflection, scattering or transmission out of the active region. Interruption may also be achieved with a plurality of parallel etched grooves extending in the longitudinal direction. The grooves which cut through the active region present a semiconductor-air interface for reflection and/or scattering of laterally propagating light out of the active region. Proton bombarded regions may be provided above the step regions in the top layers to channel current and prevent optical burnout of the step regions.

US Patent:

48752169, Oct 17, 1989

Filed:

Nov 30, 1987

Appl. No.:

7/126546

Inventors:

Robert L. Thornton - East Palo Alto CA
Robert D. Burnham - Wheaton IL

Assignee:

Xerox Corporation - Stamford CT

International Classification:

H01S 319

US Classification:

372 45

Abstract:

A window laser having at least one window region with a transparent waveguide layer optically coupled to an active region generating lightwaves. The waveguide layer is characterized by a broader guided transverse mode for the lightwaves than the active region and may have a thickness which is greater than the active region, a refractive index difference with respect to cladding layers which is less than a refractive index difference between the active region and the cladding layers, or both. The waveguide layer may be coupled to the active region via a transition region characterized by a gradual change in the guide mode width of the lightwaves, such as from a tapered increase in thickness of the waveguide layer in a direction away from the active region. The preferred method of making window region having these transparent waveguides is impurity induced disordering, in which the interfaces between active region and cladding layers is disordered by impurity species to produce the waveguide layer with increased bandgap and a graded transverse refractive index profile. The laser is characterized by a high power output beam with reduced far field transverse divergence.

US Patent:

RE332747, Jul 24, 1990

Filed:

Jan 31, 1989

Appl. No.:

7/304671

Inventors:

Robert D. Burnham - Wheaton IL
Noble M. Johnson - Menlo Park CA

Assignee:

Xerox Corporation - Stamford CT

International Classification:

H01L 21265
H01L 21203

US Classification:

437174

Abstract:

A method of converting selected areas of a semiconductor structure into a disordered alloy comprising a well feature epitaxially deposited on a semiconductor support, the well feature comprising at least one first well layer of narrow bandgap material deposited adjacent to at least a second layer of wider bandgap material or interposed between second and third layers of wider bandgap material. The disordered alloy exhibits higher bandgap and lower refractive index properties than the first layer. The method comprises the steps of (1) either placing the structure within a protective environment to prevent the escape of volatile components from the structure during subsequent processing or alternatively, covering the structure with a protective coating to prevent the escape of any elemental component of the structure, (2) heating the structure to a background temperature. [. just. ]. below the temperature required to achieve rapid thermal disordering of the well feature, (3) scanning the structure with a laser beam while maintaining the applied heat to selectively disorder the well feature due to the additional heat supplied by the laser beam forming a pattern of wider bandgap and lower refractive index properties prescribed in the feature by the scanning trace of the laser beam compared to areas of the feature not scanned by the laser beam. The well feature may be a quantum well structure comprising a single quantum well structure, a multiple quantum well structure or a separate confinement single quantum well or a separate confinement multiple quantum well or a heterostructure including an active region being the first layer.

US Patent:

49013300, Feb 13, 1990

Filed:

Jul 20, 1988

Appl. No.:

7/221670

Inventors:

Thomas Wolfram - Wheaton IL
Bruce A. Vojak - Naperville IL
Edward T. Maas - Batavia IL
Robert D. Burnham - Wheaton IL

Assignee:

Amoco Corporation - Chicago IL

International Classification:

H01S 3091

US Classification:

372 75

Abstract:

An optically pumped laser which includes a laser diode array for generating optically pumped radiation having a uniform intensity distributed over a broad band-width, and a lasant material with an absorption band for receiving radiation within such bandwidth.