Robert I Chen

US Patent:

6401526, Jun 11, 2002

Filed:

Dec 10, 1999

Appl. No.:

09/467096

Inventors:

Hongjie Dai - Sunnyvale CA
Calvin F. Quate - Stanford CA
Robert J. Chen - Palo Alto CA

Assignee:

The Board of Trustees of the Leland Stanford Junior University - Stanford CA

International Classification:

G01B 5028

US Classification:

73105, 4234473

Abstract:

Single-walled carbon nanotube (SWNT) probe-tips for atomic force microscopy (AFM) are realized by direct synthesis of SWNTs on silicon pyramids integrated onto AFM cantilevers. The growth of SWNT tips involves dip coating of silicon pyramids with a liquid phase catalyst followed by chemical vapor deposition (CVD) using methane. Van der Waals interactions between the silicon pyramidal surface and the nanotube ensure proper SWNT orientation. Production of large scale arrays of nanotube probe tips using contact printing and controllably shortening nanotubes in an inert discharge are also described.

US Patent:

6472751, Oct 29, 2002

Filed:

Sep 6, 2000

Appl. No.:

09/656437

Inventors:

Robert C. Chen - Los Altos CA
Jeffrey A. Shields - Sunnyvale CA
Robert Dawson - Austin TX
Khanh Tran - San Jose CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

H01L 2940

US Classification:

257758, 257759, 257760, 257774, 257700, 257787, 257649, 257751, 438687, 438688, 438689

Abstract:

A dielectric interlayer is formed over a semiconductor substrate comprising at least one active region. The exposed upper surface of the dielectric interlayer is treated with nitrogen to form a nitrided barrier layer thereon. At least one hydrogen-containing dielectric layer is formed over the dielectric interlayer having the nitrided barrier layer thereon. The nitrided barrier layer serves as a barrier to diffusion of hydrogen from the at least one hydrogen-containing dielectric layer into the dielectric interlayer, thereby preventing a decrease in hot carrier injection reliability.

US Patent:

6522013, Feb 18, 2003

Filed:

Aug 19, 1998

Appl. No.:

09/136527

Inventors:

Robert C Chen - Los Altos CA
Jeffrey A. Shields - Sunnyvale CA
Robert Dawson - Austin TX
Khanh Tran - San Jose CA

Assignee:

Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

H01L 2348

US Classification:

257774, 257751, 257752, 257763

Abstract:

Punch-through vias are filled by initially depositing a thin, conformal layer of titanium nitride by chemical vapor deposition to cover an exposed upper surface of a lower metal feature, e. g. portions exposed by penetrating and undercutting an anti-reflective coating. A metal such as tungsten is subsequently deposited to fill the punch-through via. Embodiments include thermal decomposition of an organic-titanium compound, such as tetrakis-dimethylamino titanium, and treating the deposited titanium nitride in an H /N plasma to lower its resistivity. Moreover, the thickness of the anti-reflective coating can be reduced and the process window for etching the via widened.

US Patent:

6660975, Dec 9, 2003

Filed:

Aug 16, 2002

Appl. No.:

10/223226

Inventors:

Albert Wang - Moraga CA
Robert Chen - El Sobrante CA

Assignee:

Matrix Integrated Systems, Inc. - Richmond CA

International Classification:

H05B 368

US Classification:

2194441, 296101

Abstract:

Methods and structures are provided for extremely flat wafer chucks, allowing close thermal contact uniformly across a semiconductor processing substrate. An upper and a lower section are tightly fit to one another with flat inner surfaces in face-to-face contact. The sections also define at least one groove therebetween. The two sections have asymmetrical thickness, but the groove defined therebetween is correspondingly asymmetrical such that the groove is centered in the assembled chuck. A heater element, such as a resistive heater, is placed within the groove with some clearance prior to assembling the upper and lower sections. After assembly and tightening, the chuck is thermally cycled above the normal operating temperature prior to secondary machining, thus assuring flatness that is maintained during high temperature operation.

US Patent:

6915335, Jul 5, 2005

Filed:

Sep 17, 2001

Appl. No.:

09/955004

Inventors:

Ming Chi Chen - Union City CA, US
Robert Chen - Fremont CA, US
Sanjoy Dey - Fremont CA, US
James Everett Grishaw - Santa Clara CA, US
Mick Henniger - Buchanan Dam TX, US

Assignee:

Cisco Technology, Inc. - San Jose CA

International Classification:

G06F015/16

US Classification:

709213, 709250, 709229, 710 8, 710 10, 710 11, 710 15

Abstract:

A method and apparatus for implementing host management of an intelligent daughtercard utilizes a high-speed serial link and a defined plurality of serial protocol commands to provide high bandwidth control path for management of daughtercard memory and application specific initialization and/or configuration changes.

US Patent:

7335258, Feb 26, 2008

Filed:

Mar 31, 2005

Appl. No.:

11/097683

Inventors:

Yuegang Zhang - Cupertino CA, US
Robert J. Chen - Santa Clara CA, US

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

C30B 29/02

US Classification:

117 68, 117 2, 423445

Abstract:

Methods of forming a microelectronic structure are described. Embodiments of those methods include attaching at least one functional group to a chondroitin sulfate molecule, and then attaching the at least one functional group to a carbon nanotube, wherein the carbon nanotube is made soluble in a solution.

US Patent:

7459312, Dec 2, 2008

Filed:

Apr 18, 2002

Appl. No.:

10/475022

Inventors:

Hongjie Dai - Sunnyvale CA, US
Robert J. Chen - Palo Alto CA, US

Assignee:

The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA

International Classification:

G01N 27/04
G01N 27/27
G01N 33/00

US Classification:

436151, 422 8201, 422 8202, 422 88, 422 90, 422 98, 436127, 436136, 436139, 436140, 436141, 436142, 436144, 436149, 436181, 436183

Abstract:

Carbon nanotube devices are manipulated in a manner that is useful for a variety of implementations. According to an example embodiment of the present invention, light () is used to photodesorb molecules from a carbon nanotube ().

US Patent:

7572647, Aug 11, 2009

Filed:

Feb 2, 2007

Appl. No.:

11/670728

Inventors:

Robert Chen - Fremont CA, US
Canfeng Lai - Fremont CA, US
Xinglong Chen - San Jose CA, US
Weiyi Luo - Fremont CA, US
Zhong Qiang Hua - Saratoga CA, US
Siqing Lu - San Jose CA, US
Muhammad Rasheed - Fremont CA, US
Qiwei Liang - Fremont CA, US
Dmitry Lubomirsky - Cupertino CA, US
Ellie Y. Yieh - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/00

US Classification:

438 5, 438788, 257E21528, 257E21478, 427 9, 42725523

Abstract:

A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.