Robert C Devlin

US Patent:

20200271941, Aug 27, 2020

Filed:

May 13, 2020

Appl. No.:

15/931184

Inventors:

- Weston MA, US
Robert Devlin - Abington PA, US
Adam Erlich - Arlington MA, US
Pawel Latawiec - Allston MA, US
John Graff - Swampscott MA, US

Assignee:

Metalenz, Inc. - Weston MA

International Classification:

G02B 27/09
H01L 27/146

Abstract:

Metasurface elements, integrated systems incorporating such metasurface elements with light sources and/or detectors, and methods of the manufacture and operation of such optical arrangements and integrated systems are provided. Systems and methods for integrating transmissive metasurfaces with other semiconductor devices or additional metasurface elements, and more particularly to the integration of such metasurfaces with substrates, illumination sources and sensors are also provided. The metasurface elements provided may be used to shape output light from an illumination source or collect light reflected from a scene to form two unique patterns using the polarization of light. In such embodiments, shaped-emission and collection may be combined into a single co-designed probing and sensing optical system.

US Patent:

20190064532, Feb 28, 2019

Filed:

Aug 31, 2018

Appl. No.:

16/120174

Inventors:

- Weston MA, US
Robert Devlin - Abington PA, US
Adam Erlich - Arlington MA, US
Pawel Latawiec - Allston MA, US
John Graff - Swampscott MA, US

Assignee:

Metalenz, Inc. - Weston MA

International Classification:

G02B 27/09

Abstract:

Metasurface elements, integrated systems incorporating such metasurface elements with light sources and/or detectors, and methods of the manufacture and operation of such optical arrangements and integrated systems are provided. Systems and methods for integrating transmissive metasurfaces with other semiconductor devices or additional metasurface elements, and more particularly to the integration of such metasurfaces with substrates, illumination sources and sensors are also provided. The metasurface elements provided may be used to shape output light from an illumination source or collect light reflected from a scene to form two unique patterns using the polarization of light. In such embodiments, shaped-emission and collection may be combined into a single co-designed probing and sensing optical system.

US Patent:

20160155941, Jun 2, 2016

Filed:

Jul 31, 2015

Appl. No.:

14/815024

Inventors:

- Philadelphia PA, US
James Rondinelli - Philadelphia PA, US
Mitra Taheri - Philadelphia PA, US
Robert Charles Devlin - Abington PA, US
Andrew Marshall Rappe - Penn Valley PA, US

Assignee:

THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA - Philadelphia PA
DREXEL UNIVERSITY - Philadelphia PA

International Classification:

H01L 45/00

Abstract:

A vertical charge ordered transistor is disclosed. A thin charge ordered layer is employed as a tunnel barrier between two electrodes. A gate-induced accumulation of charge destabilizes the charge ordered state around the circumference of the device, opening up a parallel ohmic conduction channel, which leads to an exponential increase in source-drain current. VCOT devices have the potential to exhibit very large on/off ratios, low off-state currents, and sub-threshold slopes below 60 mV/dec.

US Patent:

20150001537, Jan 1, 2015

Filed:

Feb 15, 2013

Appl. No.:

14/373267

Inventors:

James RONDINELLI - Philadelphia PA, US
Mitra TAHERI - Philadelphia PA, US
Andrew Marshall RAPPE - Penn Valley PA, US
Robert Charles DEVLIN - Abington PA, US
- Philadelpia PA, US
- Philadelphia PA, US

Assignee:

Drexel University - Philadelphia PA
The Trustees of the University of Pennsylvania - Philadelphia PA

International Classification:

H01L 29/24
H01L 29/66
H01L 29/78

US Classification:

257 43, 438104

Abstract:

A vertical charge ordered transistor is disclosed. A thin charge ordered layer is employed as a tunnel barrier between two electrodes. A gate-induced accumulation of charge destabilizes the charge ordered state around the circumference of the device, opening up a parallel ohmic conduction channel, which leads to an exponential increase in source-drain current. VCOT devices have the potential to exhibit very large on/off ratios, low off-state currents, and sub-threshold slopes below 60 mV/dec.