Robert L Faulconer

US Patent:

6652824, Nov 25, 2003

Filed:

Dec 9, 2002

Appl. No.:

10/314719

Inventors:

Rosemary T. Nettleton - Vancouver WA
Robert L. Faulconer - Brush Prairie WA
Aaron W. Johnson - Vancouver WA

Assignee:

SEH America, Inc. - Vancouver WA

International Classification:

C01B 3326

US Classification:

4233282, 117 13, 117 19

Abstract:

A method of growing a crystalline ingot having a 110 orientation, such as a dislocation-free (âDFâ) crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a 110 crystal direction is contacted with the surface of the melt. The seed crystal is then withdrawn from the melt to thereby grow a neck. According to one embodiment, the seed elevation rate is automatically modified during the withdrawing step to reduce the diameter of the neck to greater than about 2. 5 mm. Thereafter, the seed elevation rate is manually modified to alternate the diameter of the neck between about 2 mm and about 2. 5 mm to thereby shape the neck into a recurring hourglass configuration. The neck is then withdrawn from the melt to grow a crystalline ingot having a 110 crystal direction and a diameter of at least about 200 mm.

US Patent:

20020104475, Aug 8, 2002

Filed:

Feb 7, 2001

Appl. No.:

09/778373

Inventors:

Rosemary Nettleton - Vancouver WA, US
Robert Faulconer - Vancouver WA, US
Aaron Johnson - Vancouver WA, US

Assignee:

SEH America, Inc.

International Classification:

C30B015/00
C30B021/06
C30B027/02
C30B028/10
C30B030/04

US Classification:

117/013000

Abstract:

A method of growing a crystalline ingot having a

US Patent:

20050066888, Mar 31, 2005

Filed:

Sep 30, 2003

Appl. No.:

10/676274

Inventors:

Jesse Griggs - Vancouver WA, US
Robert Faulconer - Vancouver WA, US

International Classification:

C30B035/00
C30B015/00
C30B021/06
C30B027/02
C30B028/10
C30B030/04

US Classification:

117217000, 117208000, 117218000

Abstract:

A Czochralski single crystal pulling apparatus having a one or more active damping modules used to reduce or eliminate unwanted orbital motion during crystal growth. The active damping module utilizes the mass of the crystal and the pendular length to determine the critical damping coefficient. A controller continually adjusts a control loop dampener to keep the active damping module at the critical dampening coefficient during crystal growth. A wire interceptor is located near the pulling wire, such that if a growing crystal experiences orbit, the pull wire will contact the wire interceptor, and the pendular energy associated with orbit will be transferred to, and absorbed by, the active damping module.