Robert E Fleming

US Patent:

6480633, Nov 12, 2002

Filed:

Jun 17, 1999

Appl. No.:

09/335125

Inventors:

Robert McLemore Fleming - Chatham NJ
Rafael Nathan Kleiman - New York NY
John William Osenbach - Kutztown PA
Gordon Albert Thomas - Princeton NJ

Assignee:

Agere Systems Inc. - Orlando FL

International Classification:

G02F 1035

US Classification:

385 2, 385 8

Abstract:

An electro-optic device comprising an electro-optic crystal substrate, an optical waveguide path in the crystal adjacent the substrate surface and an electrode spaced from the surface by a buffer layer is provided with enhanced operating stability by forming the buffer layer of a transparent electronically conductive material. Preferred buffer materials are electronically conductive gallium-indium-oxide and electronically conductive zinc-indium-tin-oxide.

US Patent:

20110303880, Dec 15, 2011

Filed:

Jun 9, 2011

Appl. No.:

13/157029

Inventors:

Sudhir M. Mulik - North Wales PA, US
Joseph F. Ludvik - Midlothian VA, US
Robert W. Fleming - Johns Creek GA, US
Christopher M. Lee - Norcross GA, US

Assignee:

GEORGIA-PACIFIC CHEMICALS LLC - Altanta GA

International Classification:

H01B 1/04
C01B 31/02
C08L 61/12

US Classification:

252502, 524841, 423445 R

Abstract:

Methods of manufacturing nano-engineered carbon materials, such as carbon aerogels and carbon xerogels, and methods of manufacturing precursor solutions and sol-gels for making the same are provided. A method for manufacturing a precursor solution comprises programmed-addition of a cross-linking agent to a component mixture comprising a resorcinol compound. A method for manufacturing a sol-gel comprises subjecting a precursor solutions to at least one heat treatment. Methods for producing nano-engineered carbon materials from precursor solutions and sol-gels are also provided. Methods for using the nano-engineered carbon materials are also disclosed. The resulting nano-engineered carbon materials can be useful in a range of products including, supercapacitor applications, high-surface-area electrodes, fuel cells, and desalination systems.

US Patent:

59775823, Nov 2, 1999

Filed:

May 23, 1997

Appl. No.:

8/862907

Inventors:

Robert McLemore Fleming - Chatham NJ
Lynn Frances Schneemeyer - Westfield NJ
Robert Bruce van Dover - Maplewood NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01L 2710
H01L 2704
H01L 2978

US Classification:

257310

Abstract:

A dielectric layer consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors, typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3. mu. coulomb/cm. sup. 2. In a currently preferred embodiment, the dielectric layer has composition Ta. sub. 1-y Al. sub. y O. sub. x N. sub. z, with y. about. 1, x. about. 2. 4, and z. about. 02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e. g. , chemical vapor deposition.

US Patent:

56591810, Aug 19, 1997

Filed:

Mar 2, 1995

Appl. No.:

8/393494

Inventors:

Paul Michael Bridenbaugh - Somerville NJ
Robert McLemore Fleming - Chatham NJ
Robert Cort Haddon - Dover NJ
Robert Alfred Laudise - Berkeley Heights NJ
Theo Siegrist - Neshanic Station NJ

Assignee:

Lucent Technologies Inc. - Murray Hill NJ

International Classification:

H01L 3524
H01L 5100

US Classification:

257 40

Abstract:

A previously unknown phase of. alpha. -hexathienyl, designated. alpha. -6T/HT, exhibits diffraction peaks at 2. theta. =4. 31. degree. , 8. 64. degree. , 12. 96. degree. , 17. 32. degree. , 26. 15. degree. and 29. 08. degree. in a CuK. sub. alpha. powder X-ray diffraction pattern, and is expected to have properties (e. g. , high hole mobility) that make the phase desirable for use in, e. g. , thin film transistors. Substitution of thin films of. alpha. -6T/HT for prior art organic thin films in thin film transistors and other devices is contemplated.