Robert Grubbs

US Patent:

8080280, Dec 20, 2011

Filed:

Oct 16, 2007

Appl. No.:

11/872749

Inventors:

Robert K. Grubbs - Albuquerque NM, US
Gregory R. Bogart - Corrales NM, US
John A. Rogers - Champaign IL, US

Assignee:

Sandia Corporation - Albuquerque NM

International Classification:

C23C 16/00

US Classification:

4272481, 4272557

Abstract:

Methods are described for making nanostructures that are mechanically, chemically and thermally stable at desired elevated temperatures, from nanostructure templates having a stability temperature that is less than the desired elevated temperature. The methods comprise depositing by atomic layer deposition (ALD) structural layers that are stable at the desired elevated temperatures, onto a template employing a graded temperature deposition scheme. At least one structural layer is deposited at an initial temperature that is less than or equal to the stability temperature of the template, and subsequent depositions made at incrementally increased deposition temperatures until the desired elevated temperature stability is achieved. Nanostructure templates include three dimensional (3D) polymeric templates having features on the order of 100 nm fabricated by proximity field nanopatterning (PnP) methods.

US Patent:

20120028191, Feb 2, 2012

Filed:

Jul 29, 2011

Appl. No.:

13/194151

Inventors:

Yang Qin - Albuquerque NM, US
Robert B. Grubbs - Miller Place NY, US
Young Suk Park - Coram NY, US

Assignee:

Brookhaven Science Associates, LLC - Upton NY

International Classification:

H01L 21/04
G03F 7/20
C07F 7/18
B05D 3/12
B05D 3/06
B05D 3/02
C08G 75/06
B05D 5/12

US Classification:

430319, 528 27, 528 20, 528 14, 528 15, 525474, 427521, 549 4

Abstract:

The invention relates azide functionalized poly(3-hexylthiophene)s. Various azide functionalized poly(3-hexylthiophene)s and intermediates are disclosed and described, as well as method for making novel monomers that are synthesized and transformed into P3HT-Nfor use as organic conducting polymers in organic photovoltaic devices.

US Patent:

20190074100, Mar 7, 2019

Filed:

Oct 30, 2018

Appl. No.:

16/174744

Inventors:

- Albuquerque NM, US
Robert K. Grubbs - Albuquerque NM, US
Jonathan Joseph Coleman - Albuquerque NM, US

International Classification:

G21K 1/10
C25D 3/48

Abstract:

A method for electroplating a nonmetallic grating including providing a nonmetallic grating; performing an atomic layer deposition (ALD) reaction to form a seed layer on the nonmetallic grating; and electroplating a metallic layer on the seed layer such that the metallic layer uniformly and conformally coats the nonmetallic grating. An apparatus including a silicon substrate having gratings with an aspect-ratio of at least 20:1; a atomic layer deposition (ALD) seed layer formed on the gratings; and an electroplated metallic layer formed on the seed layer, wherein the electroplated metallic layer uniformly and conformally coats the gratings.

US Patent:

20180269143, Sep 20, 2018

Filed:

May 15, 2018

Appl. No.:

15/980546

Inventors:

Scott Silverman - , US
- Albuquerque NM, US
Karl Douglas Greth - Albuquerque NM, US
Michael David Henry - Albuquerque NM, US
Jeffrey Stevens - Albuquerque NM, US
V. Carter Hodges - Albuquerque NM, US
Randy J. Shul - Albuquerque NM, US
Ronald S. Goeke - Albuquerque NM, US
Robert K. Grubbs - Boise ID, US
Scott Silverman - San Marcos CA, US

International Classification:

H01L 23/498
H01L 23/538
H01L 21/48
H01L 23/00
H01L 23/31

Abstract:

The present invention relates to a lateral via to provide an electrical connection to a buried conductor. In one instance, the buried conductor is a through via that extends along a first dimension, and the lateral via extends along a second dimension that is generally orthogonal to the first dimension. In another instance, the second dimension is oblique to the first dimension. Components having such lateral vias, as well as methods for creating such lateral vias are described herein.