A network for initiating oscillations of a low power oscillator circuit at low operating voltages. The oscillator circuit includes an inverter with a quartz crystal connected between its input and output and with impedance means connected in series with the main conduction path of the inverter to reduce its power dissipation. The initiation network includes a switching means which is connected in parallel with the impedance means and which is responsive to the application of an operating potential to the oscillator circuit for momentarily providing a low impedance conduction path in parallel with the impedance means when an operating potential is applied to the circuit.
Reduction Of Parasitic Bipolar Effects In Integrated Circuits Employing Insulated Gate Field Effect Transistors Via The Use Of Low Resistance Substrate Contacts Extending Through Source Region
George Ira Morton - Belle Mead NJ Robert Charles Heuner - Bound Brook NJ
Assignee:
RCA Corporation - New York NY
International Classification:
H01L 2702 H01L 2978 H03K 3353
US Classification:
357 42
Abstract:
Low resistance substrate contacts extending through the source region of an insulated gate field effect transistor (IGFET) will reduce parasitic bipolar effects in an integrated circuit. Such low resistance contacts may be made by diffusing impurities of a type opposite to the conductivity type of the source region through spaced areas of the source region thereby to provide low resistance paths between all points in the source and the underlying substrate. The low resistance contacts prevent large voltage drops in the substrate underlying the source thereby preventing "latch-up" of the parasitic devices formed during the manufacture of the integrated circuit.
David Keith Morgan - Flemington NJ Robert Charles Heuner - Bound Brook NJ
Assignee:
RCA Corporation - New York NY
International Classification:
H03K 520 H03F 345 H03F 316 G05F 302
US Classification:
307235T
Abstract:
In the "on" condition of the circuit, a current mirror supplies a constant current to a comparator, a voltage divider circuit supplies a reference voltage to one input terminal of the comparator, and the input voltage to be compared to the reference voltage is applied to the other input terminal of the comparator. In the "off" condition of the circuit, the current mirror, the comparator and the voltage divider circuit are all cut off to reduce to substantially zero the power consumption of the circuit.
Protection Circuitry For Insulated-Gate Field-Effect Transistor (Igfet) Circuits
Robert Charles Heuner - Bound Brook NJ Michael Barnett Goldman - Belle Mead NJ Stanley Joseph Niemiec - Somerville NJ George Ira Morton - Belle Mead NJ
Assignee:
RCA Corporation - New York NY
International Classification:
H03K 1700
US Classification:
307304
Abstract:
The gate insulator of an IGFET, whose gate is connected to the input terminal of a circuit, is protected by limiting the potential difference between any two circuit terminals. Each input and output terminal of the circuit is connected via protective diodes to the power supply lines of the circuit and a high conductivity, low reverse dynamic impedance, diode is connected between the power supply lines. The reverse voltage across the high conductivity diode is less than that of any other diodes at a given current level, whereby only the high conductivity diode conducts substantial currents in the reverse direction.
License Records
Robert Heuner
Address:
Bound Brook, NJ
License #:
42RG00137900 - Active
Category:
Real Estate Appraisers
Issued Date:
Dec 7, 1995
Expiration Date:
Dec 31, 2017
Type:
Certified General Appraiser
Robert Heuner
Address:
Bound Brook, NJ
License #:
42RG00137900 - Active
Category:
Real Estate Appraisers
Issued Date:
Dec 7, 1995
Expiration Date:
Dec 31, 2017
Type:
Certified General Appraiser
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