Robert D Keyes

US Patent:

6764996, Jul 20, 2004

Filed:

Jul 25, 2000

Appl. No.:

09/624849

Inventors:

Yat Sun Or - Cambridge MA
Robert F. Keyes - Pleasant Prairie WI
Zhenkun Ma - Gurnee IL

Assignee:

Abbott Laboratories - Abbott Park IL

International Classification:

C07D41312

US Classification:

514 29, 540467, 540468, 514375, 514450, 536 74

Abstract:

Compounds of formula (I) formula (II) formula (III) and formula (IV) or pharmaceutically acceptable salts or prodrugs thereof, are antibacterial agents. Compositions containing the compounds, processes for making the compounds, synthetic intermediates employed in the processes, and methods for treatment and prevention of bacterial infections are disclosed.

US Patent:

39506452, Apr 13, 1976

Filed:

Sep 21, 1964

Appl. No.:

4/399130

Inventors:

Jacob Rotstein - Salem MA
Robert J. Keyes - Waltham MA

Assignee:

Massachusetts Institute of Technology - Cambridge MA

International Classification:

H01J 3149
G01J 100

US Classification:

250352

Abstract:

1. An infrared imaging device comprising, cooling means for lowering the temperature of the device, a wafer of preselected infrared sensitive material, a layer of thin infrared transparent electrically conductive material deposited on one side of said wafer, a wire mosaic, said wire mosaic in intimate contact with the remaining side of said wafer, opaque material filling a preselected area between the wires of said wire mosaic, silver paste interposed between said wafer and the tips of the wires of said wire mosaic, a photoemissive surface deposited on one side of said wire mosaic, an evacuated tube having a grid, focusing means, and a phosphor screen at one end, said wire mosaic forming the other end of said tube, lamp means for illuminating said photoemissive surface thereby providing free electrons, voltage accelerating means whereby said free electrons are accelerated toward said phosphor screen and focussed on said screen in a predetermined manner, fixed bias means whereby free electrons are confined between said grid and said photoemissive cathode whereby the resistance of said infrared sensitive wafer cooperating with grid current flow reduces said bias permitting flow of electrons according to infrared radiation impinging on said wafer.