Robert P Metzger

age ~85

from La Jolla, CA

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Also known as:

Robert Philip Metzger
Robert Andre Metzger
Robert Silvia Metzger
Robt Metzger
Bob Metzger
Rob Metzger

Phone and address:: 5392 Candlelight Dr, La Jolla, CA 92037
(858)4887351

Connected to:

Robert Metzger Phones & Addresses

5392 Candlelight Dr, La Jolla, CA 92037 • (858)4887351
Newbury Park, CA
4257 Lamont St, San Diego, CA 92109

Medicine Doctors

Robert A. Metzger

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Specialties:

Nephrology

Work:

Florida Hospital Transplant Institute
2415 N Orange Ave STE 700, Orlando, FL 32804
(407)3032474 (phone), (866)9137851 (fax)

Education:

Medical School
Creighton University School of Medicine
Graduated: 1964

Languages:

English
Spanish

Description:

Dr. Metzger graduated from the Creighton University School of Medicine in 1964. He works in Orlando, FL and specializes in Nephrology. Dr. Metzger is affiliated with Florida Hospital Orlando.

Robert Metzger

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Specialties:

Orthopaedic Surgery

Work:

Parkland Memorial Hospital Orthopaedics
4900 Harry Hines Blvd, Dallas, TX 75235
(214)5905524 (phone), (214)5902041 (fax)

Languages:

English

Description:

Mr. Metzger works in Dallas, TX and specializes in Orthopaedic Surgery. Mr. Metzger is affiliated with Parkland Memorial Hospital.

Isbn (Books And Publications)

Quad World

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Author
Robert A. Metzger

ISBN #
0451450574

Transforming Texts: Classical Images in New Contexts

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Author
Robert P. Metzger

ISBN #
0838752160

Reagan, American Icon

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Author
Robert P. Metzger

ISBN #
0916279057

Franz Kline: The Jazz Murals

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Author
Robert P. Metzger

ISBN #
0916279073

Lower-Dimensional Systems and Molecular Electronics

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Author
Robert M. Metzger

ISBN #
0306438267

High Temperature Superconductivity : The First Two Years

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Author
Robert M. Metzger

ISBN #
2881242995

Profitable Consulting : Guiding America's Managers into the Next Century

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Author
Robert O. Metzger

ISBN #
0201095394

Developing a Consulting Practice

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Author
Robert O. Metzger

ISBN #
0803950462

Lawyers & Attorneys

Robert Metzger - Lawyer

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ISLN:

904834770

Admitted:

1974

Name / Title

Company / Classification

Phones & Addresses

Robert Metzger

McM Equine, LLC
Equine Management

2560 Old Topanga Cyn Rd, Topanga, CA 90290

Robert J Metzger

B. K. REALTY COMPANY, LTD

Robert L Metzger

ZIEGLER METZGER LLP

Robert E. Metzger

METZGER POPCORN FARMS, LLC

Robert J Metzger

FOUNTAINEBLEAU, LTD

Robert J Metzger

635 WARRIORS, LTD

Robert M Metzger
President

TIR CORPORATION

Robert Metzger
Managing

Mobilelink LLC
Retail Wireless Tmobile

7404 Altiva Pl, Carlsbad, CA 92009

Us Patents

Detection Of Carbon Halogen Bonds
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US Patent:

7433035, Oct 7, 2008
Filed:

Aug 30, 2002
Appl. No.:

10/234580
Inventors:

Vladimir Semenovich Gorelik - Moscow, RU
Robert P. Metzger - La Jolla CA, US
Dale F. Shellhamer - San Diego CA, US
Georg R. Wischnath - Guetersloh, DE
Assignee:

San Diego State University Research Foundation - San Diego CA
International Classification:

G01J 3/44
G01N 21/65
US Classification:

356301
Abstract:

Detecting and determination of halooorganic compounds is described, which is applicable in the pharmaceutical industry, in fluorinated drug research and manufacturing; in the medical and clinical studies of the effects of fluoroorganic compounds; in the environmental and agricultural studies and screening, in the analysis of water, soils and air contaminated with fluoroorganic compounds.

Electrical Junction Device With Lightly Doped Buffer Region To Precisely Locate A P-N Junction
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US Patent:

54040280, Apr 4, 1995
Filed:

Jan 22, 1993
Appl. No.:

8/007705
Inventors:

Robert A. Metzger - Thousand Oaks CA
Madjid Hafizi - Santa Monica CA
William E. Stanchina - Thousand Oaks CA
David B. Rensch - Thousand Oaks CA
Assignee:

Hughes Aircraft Company - Los Angeles CA
International Classification:

H01L 29161
H01L 2972
US Classification:

257 15
Abstract:

An electrical junction is precisely located between a highly p doped semiconductor material and a more lightly n doped semiconductor material by providing a lightly p doped buffer region between the two materials, with a doping level on the order of the n doped material's. The buffer region is made wide enough to establish an electrical junction at approximately its interface with the n doped material, despite a diffusion of dopant from the p doped material. When applied to a heterojunction bipolar transistor (HBT), the transistor's base serves as the heavily p doped material and its emitter as the more lightly n doped material. The buffer region is preferably employed in conjunction with a graded superlattice, located between the buffer and emitter, which inhibits dopant diffusion from the base into the emitter. A p-n junction is formed within the superlattice, which functions on one side as an electrical extension of the emitter and on the other side as an electrical extension of the buffer, and establishes the electrical junction at the p-n junction location. The precise positioning of the electrical junction results in a known and repeatable emitter-base turn-on voltage.

Heterojunction Diode With Low Turn-On Voltage
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US Patent:

55324860, Jul 2, 1996
Filed:

Feb 13, 1995
Appl. No.:

8/387507
Inventors:

William E. Stanchina - Thousand Oaks CA
Robert A. Metzger - Atlanta GA
David B. Rensch - Thousand Oaks CA
Assignee:

Hughes Aircraft Company - Los Angeles CA
International Classification:

H01L 310328
US Classification:

257201
Abstract:

A high speed diode with a low forward-bias turn-on voltage is formed by a heterojunction between a layer of doped semiconductor material that has a narrow bandgap energy of not more than about 0. 4 eV, and a layer of oppositely doped semiconductor material that has a substantially wider bandgap energy. The device operates with a lower turn-on voltage than has previously been attainable, despite lattice mismatches between the two materials that can produce strain and substantial lattice dislocations in the low bandgap material. The two materials are selected so that the valence and conduction band edge discontinuities at the heterojunction enable a forward carrier flow but block a reverse carrier flow across the junction under forward-bias conditions. Preferred material systems are InAs for the narrow bandgap material, InGaAs for the wider bandgap material and InP for the substrate, or AlSb for the wider bandgap material and GaSb for the substrate. A compositional grading can be provided at the heterojunction to reduce energy band spikes, and a region of low dopant concentration is included in the wider bandgap material to increase the diode's reverse-bias breakdown voltage.

Method For Reversing Tone Or Polarity Of Pattern On Integrated Circuit Substrate Utilizing Reverse Casting By Planarization
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US Patent:

49735446, Nov 27, 1990
Filed:

Mar 7, 1989
Appl. No.:

7/320208
Inventors:

Charles W. Slayman - Newbury Park CA
Robert A. Metzger - Woodland Hills CA
Adele E. Schmitz - Newbury Park CA
Assignee:

Hughes Aircraft Company - Los Angeles CA
International Classification:

G03C 500
US Classification:

430323
Abstract:

The tone or polarity of a patterned layer such as a photoresist mask on an integrated circuit or device substrate is reversed with substantially perfect alignment. A liquid planarizing layer is formed and hardened onto the patterned layer and underlying substrate, filling in spaces between pattern areas. The planarizing layer is then etched to a sufficient depth to expose the patterned layer. Finally, the patterned layer is dissolved away, leaving the reversed tone image which is constituted by the planarizing material in the spaces which were filled in. Modified embodiments enable large spaces between original pattern areas to be effectively reversed, and multi-level reversed tone images to be formed in which the reversed tone layers are thicker than the original layers.

Gain-Stable Npn Heterojunction Bipolar Transistor
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US Patent:

53650778, Nov 15, 1994
Filed:

Jan 22, 1993
Appl. No.:

8/007695
Inventors:

Robert A. Metzger - Thousand Oaks CA
Madjid Hafizi - Santa Monica CA
William E. Stanchina - Thousand Oaks CA
Loren G. McCray - Thousand Oaks CA
Assignee:

Hughes Aircraft Company - Los Angeles CA
International Classification:

H01L 2972
H01L 29205
US Classification:

257 15
Abstract:

A gain-stable npn heterojunction bipolar transistor includes a graded superlattice between its base and emitter consisting of multiple discrete periods, with each period having a layer of base material and another layer of emitter material. The thicknesses of the base material layers decrease while the thicknesses of the emitter material layers increase in discrete steps for each successive period from the base to the emitter. The thickness of each period is preferably at least about 20 Angstroms, with the superlattice including more than five periods. The superlattice is preferably doped to establish an electrical base-emitter junction at a desired location. The graded superlattice inhibits the diffusion of beryllium p dopant from the base into the emitter during transistor operation, thus stabilizing the device's gain and turn-on voltage.

Method Of Fabricating Inverted Modulation-Doped Heterostructure
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US Patent:

53228081, Jun 21, 1994
Filed:

Feb 19, 1993
Appl. No.:

8/020095
Inventors:

April S. Brown - Thousand Oaks CA
Joseph A. Henige - Thousand Oaks CA
Mark Lui - Thousand Oaks CA
Loi Nguyen - Thousand Oaks CA
Robert A. Metzger - Thousand Oaks CA
William E. Stanchina - Thousand Oaks CA
Assignee:

Hughes Aircraft Company - Los Angeles CA
International Classification:

H01L 21265
US Classification:

437 40
Abstract:

A donor layer (17) including an undoped wide bandgap material (14) and an n-type dopant (16) is deposited on a substrate (12) by molecular beam epitaxy (MBE) at a first temperature which is high enough for optimal growth of the donor layer (17). The dopant (16) is silicon or another material which exhibits surface segregation in the wide bandgap material (14) at the first temperature. An undoped spacer layer (18) of the wide bandgap material is deposited on the donor layer (17) at a second temperature which is sufficiently lower than the first temperature that surface segregation of the dopant material from the donor layer (17) into the spacer layer (18) is substantially suppressed. A channel layer (20) of a narrow bandgap material is formed on the spacer layer (18) at a third temperature which is higher than the second temperature and selected for optimal growth of the channel layer (20). The spacer layer (18) is substantially undoped, and the low temperature growth and reduction of donor movement reduces ionized impurity scattering in the channel layer (20).

Resumes

Robert Metzger Billings, MT

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Work:

JLA Global

Jun 1999 to 2000
Safety Engineer CONOCO Petroleum Refinery
Billings, MT
Jan 1990 to Jun 1999
Contractor Safety Manager

Education:

San Diego State University
San Diego, CA
1975 to 1978
Some College and continuing education in Occupational Safety and Health

Skills:

Excellent Written and Verbal Skills, Ability to Train, Ability to Communicate, Knowledge of Federal and State Safety Regulations, Ability to Analyze, Knows Safety Management Systems. Advanced computer skills with all Microsoft Office programs, etc

Amazon

Quad World (Roc)

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John Smith began that morning a perfectly health man, but before he knows it time freezes during his morning staff meeting and he thinks he's dying. Has his body stopped or has everything around him? When the clock begins to click again, he is trapped in a parallel universe, where he is "greeted" by...

Author
Robert A. Metzger

Binding
Mass Market Paperback

Pages
320

Publisher
Roc

ISBN #
0451450574

EAN Code
9780451450579

ISBN #
10

Automatic Algorithm Recognition and Replacement: A New Approach to Program Optimization

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Parallel computation will become the norm in the coming decades. Unfortunately, advances in parallel hardware have far outpaced parallel applications of software. There are currently two approaches to applying parallelism to applications. One is to write completely new applications in new languages....

Author
Robert Metzger, Zhaofang Wen

Binding
Hardcover

Pages
231

Publisher
The MIT Press

ISBN #
0262133687

EAN Code
9780262133685

ISBN #
6

My Land Is the Southwest: Peter Hurd Letters and Journals

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In July, 1921, Peter Hurd was a West Point plebe with dreams of a military destiny. But by the spring of 1924, the young man from Roswell, New Mexico, had abandoned the army as a career and was studying painting in Chadds Ford, Pennsylvania, under N. C. Wyeth. The experiences that led Hurd to art, a...

Binding
Hardcover

Pages
408

Publisher
Texas a & M Univ Pr

ISBN #
0890961565

EAN Code
9780890961568

ISBN #
5

Consulting to Management

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Hardcover: 616 pagesPublisher: Prentice Hall PTR (September 1982)Language: English

Author
L. Greiner, Larry E. Greiner

Binding
Hardcover

Pages
616

Publisher
Prentice Hall PTR

ISBN #
0131691287

EAN Code
9780131691285

ISBN #
9

The Physical Chemist's Toolbox

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The working tools of the physical sciences, expertly organized into one volumeCovering the basic concepts and working tools in the physical sciences, this reference is a unique, indispensable guide for students and researchers in chemistry, physics, and related disciplines. Everyone from novices to ...

Author
Robert M. Metzger

Binding
Hardcover

Pages
960

Publisher
Wiley

ISBN #
047088925X

EAN Code
9780470889251

ISBN #
8

Indian Defence Review Vol 28.2

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India’s national security apparatus and the military was forced to go on alert to level ‘Orange’ as the Chinese PLA came 30 kilometers deep into Eastern Ladakh, violating all norms of maintaining peace on the border threatening the sovereignty . Lt Gen JS Bajwa, former Chief of Staff, Eastern Comman...

Author
Robert S Metzger, Lt Gen BS Pawar, Lt Gen JS Bajwa, Maj Gen Mrinal Suman, Lt Gen Prakash Katoch, Lt Gen Gautam Banerjee, Air Marshal Dhiraj Kukreja, Air Vice Marshal AK Tiwari, Cmde Ranjit B Rai

Binding
Kindle Edition

Pages
176

Publisher
Lancer Publishers LLC

ISBN #
1

Cusp

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The year is 2051. An enigmatic entity has its own plan for human evolution, using the supercomputer known as CUSP-the first machine designed to run on the software of the human mind...

Author
Robert A. Metzger

Binding
Hardcover

Pages
528

Publisher
Ace Hardcover

ISBN #
0441012418

EAN Code
9780441012411

ISBN #
4

Picoverse

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In the early 21st century, scientists have found a way to create a brand new universe...one million-millionth the size of our own.

Author
Robert A. Metzger

Binding
Mass Market Paperback

Pages
400

Publisher
Ace

ISBN #
044101030X

EAN Code
9780441010301

ISBN #
3

Wikipedia

Robert A. Metzger

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Robert A. Metzger (born 1956) is an electrical engineer and science fiction author. He was a Nebula Award finalist in the novel category in 2002 for his second...

ISBN #
3

Plaxo

Robert Metzger

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President at Recall

Classmates

Robert Metzger

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Schools:

Forest Hill Elementary School Noblesville IN 1978-1979, Hinkle Creek Elementary School Noblesville IN 1980-1982, Noblesville Junior High School Noblesville IN 1982-1984

Community:

Kathy Clover

Robert Metzger

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Schools:

Douglas MacArthur High School Saginaw MI 1966-1970

Community:

Christine Palmer, Mel Howard, Greg Bader

Robert Metzger

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Schools:

Buchanan High School Buchanan MI 1948-1952

Community:

Barbara Nelson, Caroline Schwartz

Robert Metzger

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Schools:

Ladysmith High School Ladysmith WI 1941-1945

Community:

Donna Birch, Julie Haen

Robert Metzger

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Schools:

Chaparral Elementary School Claremont CA 1965-1968, La Puerta School Claremont CA 1969-1970

Community:

Yvonne Hernandez

Robert Metzger

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Schools:

Bonnie Brennan Elementary School Winslow AZ 1971-1978, Winslow Junior High School Winslow AZ 1978-1980

Robert Metzger

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Schools:

Old Orchard Elementary School Toledo OH 1968-1969, DeVilbiss High School Toledo OH 1969-1973

Community:

Paul Goldner, Robert Wagner, Sue Waller

Robert Metzger

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Schools:

Kennedy High School Manchester MO 1978-1982

Community:

John Stecher, Cheryl Berger, Dana Sartors, Keith Ranek, C Bou, Greig Martin, Mike Reger, Janette Harmon, John Doe, Cindy Fillman, Mark Petschel

Googleplus

Robert Metzger

Work:

Stevens Transport

Robert Metzger

News

Wash. prosecutor expects police report on fatal shooting

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Also on Wednesday, the U.S. Office of Community Oriented Policing Services said it will offer technical assistance and training to the Pasco Police Department. The decision follows a request from U.S. Attorney Michael C. Ormsby and Pasco Police Chief Robert Metzger.
Date: May 27, 2015
Category: U.S.
Source: Google

Police in Pasco brace for more protests over shooting of Mexican national

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The citys police chief, Robert Metzger, responded, assuring the Mexican consulate in Seattle that the force lament[s] the loss of life of any of our residents and will not seek to prejudice the ongoing investigation.
Date: Feb 14, 2015
Category: U.S.
Source: Google