Robert Dale O'Donnell

US Patent:

6852636, Feb 8, 2005

Filed:

Dec 27, 1999

Appl. No.:

09/472757

Inventors:

Robert J. O'Donnell - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L021/302
H01L021/3065

US Classification:

438706, 438710, 438712, 438720

Abstract:

A method for performing a metallic etch, etch mask stripping, and removal of residual sidewall passivation in a single etch chamber. A wafer is placed in an etch chamber. A metal etch is performed on the wafer. A stripping gas, such as a mixture of oxygen and argon is provided to the etch chamber and is energized to form an oxygen plasma. The oxygen plasma strips the etch mask from the wafer and removes residual sidewall passivation. The oxygen plasma also cleans the etch chamber.

US Patent:

6954993, Oct 18, 2005

Filed:

Jun 30, 2004

Appl. No.:

10/883301

Inventors:

Michael G. R. Smith - Dublin CA, US
Michael Ravkin - Sunnyvale CA, US
Robert J. O'Donnell - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

F26B005/04

US Classification:

34407, 34 92

Abstract:

In one of the many embodiments, a method for processing a substrate is disclosed which includes generating a first fluid meniscus and a second fluid meniscus at least partially surrounding the first fluid meniscus wherein the first fluid meniscus and the second fluid meniscus are generated on a surface of the substrate.

US Patent:

6988326, Jan 24, 2006

Filed:

Sep 30, 2004

Appl. No.:

10/957384

Inventors:

Robert J. O'Donnell - Fremont CA, US
Thomas W. Anderson - Livermore CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

F26B 21/06

US Classification:

34381, 34 79

Abstract:

In one of the many embodiments, a method for processing a substrate is provided which includes generating a first fluid meniscus and a second fluid meniscus on a surface of the substrate where the first fluid meniscus being substantially adjacent to the second fluid meniscus. The meniscus also includes substantially separating the first fluid meniscus and the second fluid meniscus with a barrier.

US Patent:

7093375, Aug 22, 2006

Filed:

Sep 30, 2004

Appl. No.:

10/956799

Inventors:

Robert J. O'Donnell - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

F26B 21/06

US Classification:

34 79, 34 92

Abstract:

An apparatus for processing a substrate is provided which includes a proximity head proximate to a surface of the substrate when in operation. The apparatus also includes an opening on a surface of the proximity head to a cavity defined in the proximity head where the cavity delivers an active agent to the surface of the substrate through the opening. The apparatus further includes a plurality of conduits on the surface of the proximity head that generates a fluid meniscus on the surface of the substrate surrounding the opening.

US Patent:

7300537, Nov 27, 2007

Filed:

Dec 2, 2004

Appl. No.:

11/000894

Inventors:

Robert J. O'Donnell - Fremont CA, US
John E. Daugherty - Newark CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/00
C23C 16/00

US Classification:

15634551, 15634552, 15634553, 118724, 118725, 118726, 20429801, 216 67

Abstract:

Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.

US Patent:

7311797, Dec 25, 2007

Filed:

Jun 27, 2002

Appl. No.:

10/180504

Inventors:

Robert J. O'Donnell - Fremont CA, US
John E. Daugherty - Newark CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 21/00
C23C 16/00

US Classification:

15634551, 15634552, 15634553, 118724, 118725, 118726, 20429801

Abstract:

Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.

US Patent:

7363727, Apr 29, 2008

Filed:

Jun 5, 2006

Appl. No.:

11/447538

Inventors:

Robert J. O'Donnell - Fremont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

F26B 7/00

US Classification:

34380, 134902

Abstract:

A method for processing a substrate is provided. The method includes applying an active agent to an active region of a surface of the substrate. Then, the method includes generating a fluid meniscus on the surface of the substrate with a proximity head, where the fluid meniscus is surrounding the active region. In one example, processing the surface of the substrate with the active agent includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, or a lithography operation, and processing the surface of the substrate with the fluid meniscus includes one of an etching operation, a cleaning operation, a rinsing operation, a plating operation, a drying operation, or a lithography operation.

US Patent:

7503977, Mar 17, 2009

Filed:

Sep 27, 2005

Appl. No.:

11/237190

Inventors:

Robert J. O'Donnell - Fremont CA, US
Thomas W. Anderson - Hayward CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

B05B 7/06
B05B 5/00
B05C 11/10

US Classification:

118313, 118 63, 118642

Abstract:

A substrate preparation system includes a proximity head configured to be positioned near a surface of the substrate to deliver a solution to the surface of the substrate. The proximity head includes a plurality of inlets for delivering the solution and a plurality of outlets for removing a portion of the solution from the surface of the substrate. The surface of the substrate maintains a remaining portion of the solution as a coherent film after the proximity head is scanned over the surface of the substrate. The coherent film is configured to be cured. The remaining portion of the solution acts on the surface of the substrate and binds particulates present on the surface of the substrate as the coherent film cures.