Robert W Rapp

US Patent:

43929281, Jul 12, 1983

Filed:

Jan 26, 1982

Appl. No.:

6/342683

Inventors:

Chiang Y. Yang - Miller Place NY
Robert A. Rapp - Columbus OH

Assignee:

The United States of America as represented by the United States
Department of Energy - Washington DC

International Classification:

C25D 500

US Classification:

204130

Abstract:

A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.