Chiang Y. Yang - Miller Place NY Robert A. Rapp - Columbus OH
Assignee:
The United States of America as represented by the United States Department of Energy - Washington DC
International Classification:
C25D 500
US Classification:
204130
Abstract:
A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.
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