Robert D Shepherd

US Patent:

59142782, Jun 22, 1999

Filed:

Jan 23, 1997

Appl. No.:

8/788601

Inventors:

Charles A. Boitnott - Half Moon Bay CA
Robert A. Shepherd - Castro Valley CA

Assignee:

Gasonics International - San Jose CA

International Classification:

H01L 2100

US Classification:

438724

Abstract:

A modular semiconductor wafer processing system comprises a chamber with a wafer support and gas manifold structure that supplies reactive gases through a showerhead delivery system to one side of a wafer-being-processed and that exhausts both the reactive gases and a non-reactive gas flow. The other side of the wafer is protected from the reactive gases by evenly delivering the non-reactive gases from a platen close to the wafer. The gap between the wafer and platen, and the choice of non-reactive gas and its flow rate are adjusted to optimize the protection afforded to the wafer's one side while still allowing, for example, the stripping of a silicon nitride film from the wafer's other side.

US Patent:

46311050, Dec 23, 1986

Filed:

Apr 22, 1985

Appl. No.:

6/725802

Inventors:

John C. Carroll - Hayward CA
Robert A. Shepherd - Oakland CA

Assignee:

Branson International Plasma Corporation - Hayward CA

International Classification:

B44C 122
C03C 1500
C23F 100
H01L 21306

US Classification:

156345

Abstract:

Apparatus for processing semiconductor wafers and the like in an ionized gas plasma. A reaction chamber is divided into two separate regions, and driven and grounded electrodes are positioned outside the reaction chamber adjacent to respective ones of the regions. Wafers or other workpieces to be processed are placed in the region adjacent to the grounded electrode, and the gas to be ionized is introduced into the region adjacent to the driven electrode. The ionization of the gas is confined to the region adjacent to the driven electrode, and the active species pass through the perforated shield to the wafers or other workpieces.