Robert S Walters

US Patent:

20010052019, Dec 13, 2001

Filed:

Feb 5, 2001

Appl. No.:

09/777216

Inventors:

Robert Walters - Duluth GA, US
Richard Bennett - Buford GA, US

Assignee:

OVT, Inc.

International Classification:

G06F015/16

US Classification:

709/231000, 709/219000, 709/206000

Abstract:

A video mail delivery system for generating and transmitting video mail between a sender computer and a receiver computer over a communications network, such as the Internet. A video mail file containing audio and video content is recorded in a standard audio video interleave format and is then reformatted and compressed into an advanced streaming format. A video mail message window on the sender computer display enables the addition of an electronic text message to the video mail. A hyperlink to the compressed video mail file is inserted automatically into the video mail message window. When the video mail message is sent, the compressed video mail file is transmitted to a video store and forward server that stores the video mail file until it is accessed by the destination receiver computer. The electronic text message and hyperlink to the video mail file are sent to the electronic mail server of an Internet services provider for delivery to the mail server of the receiver computer's Internet services provider. When the electronic text message is opened, the user at the receiver computer clicks on the hyperlink to have the selected video file streamed from the video server to the receiver computer, where it is viewed in a video mail window display.

US Patent:

20110071198, Mar 24, 2011

Filed:

May 27, 2009

Appl. No.:

12/736966

Inventors:

Robert J. Lefkowitz - Durham NC, US
Scott M. Dewire - Durham NC, US
Erin J. Whalen - Durham NC, US
Jonathan D. Violin - Durham NC, US
Robert W. Walters - Durham NC, US

International Classification:

A61K 31/455
G01N 33/53
A61P 9/10
A61P 3/06

US Classification:

514356, 436501, 435 72

Abstract:

The present invention relates, in general, to nicotinic acid receptor ligands and, in particular, to ligands that have a relative efficacy for activating a G-protein-coupled receptor function (e.g., signaling) that is greater than their relative efficacy for stimulating β-arrestin function (e.g., recruitment and/or signaling). The invention further relates to the use of such “biased ligands” to decrease triglycerides levels and to potentially increase high density lipoprotein (HDL) levels in patients and potentially lower low density lipoprotein (LDL) and/or very low density lipoprotein (VLDL) levels. In addition, the invention relates to methods of identifying such “biased ligands”.

US Patent:

20130048063, Feb 28, 2013

Filed:

Aug 23, 2012

Appl. No.:

13/592524

Inventors:

Robert J. Walters - Alexandria VA, US
Phillip Jenkins - Washington DC, US
Maria Gonzalez - Washington DC, US
Igor Vurgaftman - Odenton MD, US
Jerry R. Meyer - Catonsville MD, US
Joshua Abell - University Park MD, US
Matthew P. Lumb - Alexandria VA, US
Michael K. Yakes - Alexandria VA, US
Joseph G. Tischler - Alexandria VA, US
Cory Cress - Alexandria VA, US
Nicholas Ekins-Daukes - Newbury, GB
Paul Stavrinou - London, GB
Jessica Adams - Chicago IL, US
Ngai Chan - London, GB

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 31/0725
G06F 17/50

US Classification:

136255, 716110

Abstract:

A multijunction (MJ) solar cell grown on an InP substrate using materials that are lattice-matched to InP. In an exemplary three-junction embodiment, the top cell is formed from InAlAsSb(with x and y adjusted so as to achieve lattice-matching with InP, hereafter referred to as InAlAsSb), the middle cell from InGaAlAs (with a and b adjusted so as to achieve lattice-matching with InP, hereafter referred to as InGaAlAs), and the bottom cell also from InGaAlAs, but with a much lower Al composition, which in some embodiments can be zero so that the material is InGaAs. Tunnel junctions (TJs) connect the junctions and allow photo-generated current to flow. In an exemplary embodiment, an InAlAsSb TJ connects the first and second junctions, while an InGaAlAs TJ connects the second and third junctions.

US Patent:

20190245111, Aug 8, 2019

Filed:

Feb 1, 2019

Appl. No.:

16/264845

Inventors:

- Arlington VA, US
David Scheiman - Alexandria VA, US
Phillip Jenkins - Cleveland Heights OH, US
Robert J. Walters - Alexandria VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 31/18
H01L 31/0224
H01L 31/0236

Abstract:

A method for making an ultra-thin, flexible crystalline silicon solar cell from thick, inflexible cells. A thick, inflexible cell having a plurality of electrical contacts on the back side thereof is adhered to a mount by means of a temporary bonding adhesive tape and a thickness of the mounted stack. A thickness of the bonding tape and the back-side contacts is determined and compared to a desired thickness of the final cell. Excess material is ground from the front side of the stack to obtain a thinned stack having the desired thickness and the thinned stack is removed from the mount to produce an ultra-thin, flexible rear-contact Si solar cell having a total thickness of less than 80 μm and a bending radius of less than 20 mm. The front surface can be textured, with a passivation layer and/or a dielectric layer being deposited thereon.

US Patent:

20180248058, Aug 30, 2018

Filed:

Feb 23, 2018

Appl. No.:

15/903259

Inventors:

- Arlington VA, US
María González - Alexandria VA, US
Phillip Jenkins - Cleveland Heights OH, US
Robert J. Walters - Alexandria VA, US
Antonio Marti Vega - Madrid, ES
Elisa Antolín Fernández - Madrid, ES
Esther López Estrada - Toledo, ES

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 31/0352
H01L 31/101
G01N 21/35

Abstract:

A semiconductor device that utilizes intraband photon absorption in quantum dots to provide a capacitive photodetector. The presence of the quantum dots creates confined energy states within the photodetector device. Electrons are trapped in these confined energy states. When the photodetector is illuminated by light having an appropriate photon energy, the stored electrons are released to the conduction band, causing a change in the capacitance of the photodetector. By measuring this change in capacitance, light incident on the photodetector can be detected and quantified.

US Patent:

20180231417, Aug 16, 2018

Filed:

Apr 17, 2018

Appl. No.:

15/955150

Inventors:

- Arlington VA, US
Robert J. Walters - Alexandria VA, US
Raymond Hoheisel - Washington DC, US
David Scheiman - Washington DC, US
Justin Lorentzen - Washington DC, US

International Classification:

G01J 3/32
G01J 3/28
G01J 5/30
G01J 3/36
G01J 5/46
G01J 3/02

Abstract:

A spectral radiometer system, measures incoming light intensity and spectral distribution in different wavelength-bands. An additional data storage device allows recording of the measured data. The inclusive sensor system yields very high sensitivity to incoming light. Furthermore, outstanding linearity of the detector response over several orders of magnitude of incoming light is achieved. Additional benefits are ultra low power consumption and minimum size. The sensor system can be used in remote solar radiation monitoring applications like mobile solar power units as well as in long-term environmental monitoring systems where high precision and low power consumption is a necessity.

US Patent:

20170353149, Dec 7, 2017

Filed:

Jun 2, 2017

Appl. No.:

15/611878

Inventors:

- Arlington VA, US
Michael K. Yakes - Alexandria VA, US
Cory D. Cress - Alexandria VA, US
Phillip Jenkins - Cleveland Heights OH, US
Jeffrey H. Warner - Arbutus MD, US
Kenneth Schmieder - Alexandria VA, US
Robert J. Walters - Alexandria VA, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H02S 30/20
H01L 31/054
H01L 31/0304
H01L 31/055

Abstract:

Photovoltaic (PV) device comprising an ultra-thin radiation-tolerant PV absorber mounted on a flexible film having an embedded persistent phosphor and having a plurality of interdigitated top and bottom contacts on the top of the PV absorber. The PV absorber is ultra-thin, e.g., typically having a thickness of 300 nm or less for a III-V-based absorber. The phosphor absorbs some of the photons incident on the device and then discharges them for use by the device in generating electrical power during times when the device is not illuminated by the sun.

US Patent:

20160211393, Jul 21, 2016

Filed:

Jan 14, 2016

Appl. No.:

14/995357

Inventors:

- Arlington VA, US
Shawn Mack - Alexandria VA, US
Maria Gonzalez - Washington DC, US
Kenneth Schmieder - Alexandria VA, US
Robert J. Walters - Alexandria VA, US

Assignee:

The Government of the United States of America, as Represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 31/0352
H01L 31/0735

Abstract:

A broken-gap tunnel junction device comprising a thin quantum well (QW) layer situated at the interface between adjacent highly doped n-type and p-type semiconductor layers, wherein the QW layer has a type-III broken-gap energy band alignment with respect to one or more of the surrounding semiconductor layers such that a conduction band of the QW layer is below the valence band of one or more of the n-type and p-type bulk semiconductor layers.