Robin C Richards

US Patent:

6979252, Dec 27, 2005

Filed:

Jan 6, 2005

Appl. No.:

11/030503

Inventors:

Junaid Ahmed Siddiqui - Richmond VA, US
Rajat Kapoor - Morrisville NC, US
Tara Ranae Keefover - Irvine CA, US
Robin Edward Richards - Phoenix AZ, US

Assignee:

DuPont Air Products Nanomaterials LLC - Tempe AZ

International Classification:

B24B001/00

US Classification:

451 60, 451446, 210749

Abstract:

A low defectivity colloidal silica-based product slurry for use in chemical mechanical planarization (CMP) and an associated production method are described. The product slurry is produced using centrifugation of and optionally with addition of a surfactant to a starting colloidal silica (which can be a commercially available colloidal silica). The product slurry has substantially lower levels of soluble polymeric silicates than does the starting colloidal silica and affords lower defectivity levels when used in a slurry for CMP processing than does the starting colloidal silica.

US Patent:

7153335, Dec 26, 2006

Filed:

Oct 10, 2003

Appl. No.:

10/683232

Inventors:

Junaid Ahmed Siddiqui - Richmond VA, US
Timothy Frederick Compton - Casa Grande AZ, US
Bin Hu - Chandler AZ, US
Robin Edward Richards - Phoenix AZ, US

Assignee:

Dupont Air Products Nanomaterials LLC - Tempe AZ

International Classification:

C09G 1/02
C09G 1/04
C09K 13/14
B24B 1/00

US Classification:

51307, 51309, 106 3, 106 11, 438692, 438693, 252 791, 252 794

Abstract:

A composition and associated method for chemical mechanical planarization (or other polishing) are described which afford high tantalum to copper selectivity in copper CMP and which are tunable (in relation to polishing performance). The composition comprises an abrasive and an N-acyl-N-hydrocarbonoxyalkyl aspartic acid compound and/or a tolyltriazole derivative.

US Patent:

7351662, Apr 1, 2008

Filed:

Sep 22, 2005

Appl. No.:

11/233110

Inventors:

Junaid Ahmed Siddiqui - Richmond VA, US
Robin Edward Richards - Phoenix AZ, US
Timothy Frederick Compton - Casa Grande AZ, US

Assignee:

DuPont Air Products Nanomaterials LLC - Tempe AZ

International Classification:

H01L 21/302

US Classification:

438690, 438691, 438692, 252 795

Abstract:

A low solids-content slurry for polishing (e. g. , chemical mechanical planarization) of substrates comprising a dielectric and an associated method using the slurry are described. The slurry and associated method afford high removal rates of dielectric during polishing even though the slurry has low solids-content. The slurry comprises a bicarbonate salt, which acts as a catalyst for increasing removal rates of dielectric films during polishing of these substrates.

US Patent:

7476620, Jan 13, 2009

Filed:

Mar 24, 2006

Appl. No.:

11/387934

Inventors:

Junaid Ahmed Siddiqui - Richmond VA, US
Daniel Hernandez Castillo - Laveen AZ, US
Steven Masami Aragaki - Kawasaki, JP
Robin Edward Richards - Phoenix AZ, US

Assignee:

DuPont Air Products NanoMaterials LLC - Tempe AZ

International Classification:

H01L 21/302

US Classification:

438692, 438693, 216 89

Abstract:

A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to particles such as to abrasive particles, or both; and 5) at least one of the group selected from a) a small amount of a chelator, b) a small amount of a dihydroxy enolic compound, and c) a small amount of an organic accelerator. Ascorbic acid in an amount less than 800 ppm, preferably between about 100 ppm and 500 ppm, is the preferred dihydroxy enolic compound. The polishing compositions and processes are useful for substantially all metals and metallic compounds found in integrated circuits, but is particularly useful for tungsten. The present invention also pertains to surface-modified colloidal abrasive polishing compositions and associated methods of using these compositions, particularly for chemical mechanical planarization, wherein the slurry comprises low levels of chelating free radical quenchers, non-chelating free radical quenchers, or both.

US Patent:

20050076579, Apr 14, 2005

Filed:

Oct 10, 2003

Appl. No.:

10/683233

Inventors:

Junaid Siddiqui - Richmond VA, US
Timothy Compton - Casa Grande AZ, US
Bin Hu - Chandler AZ, US
Robin Richards - Phoenix AZ, US
Saifi Usmani - Chandler AZ, US

International Classification:

B24D003/02
H01L021/302
H01L021/461

US Classification:

051307000, 451028000, 438692000, 438693000, 051308000, 051309000

Abstract:

A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a tricine-type or bicine-type compound. The composition possesses high selectivities for removal of copper in relation to tantalum and dielectric materials whilst minimizing local dishing and erosion effects in CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).

US Patent:

20050194563, Sep 8, 2005

Filed:

Jan 10, 2005

Appl. No.:

11/032593

Inventors:

Junaid Siddiqui - Richmond VA, US
Timothy Compton - Casa Grande AZ, US
Bin Hu - Chandler AZ, US
Robin Richards - Phoenix AZ, US
Saifi Usmani - Chandler AZ, US

International Classification:

C09K013/00
C23F001/00
B44C001/22
H01L021/302

US Classification:

252079100, 438692000, 216089000, 216088000

Abstract:

A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition comprises an abrasive and a tricine-type or bicine-type compound. The composition possesses high selectivities for removal of copper in relation to tantalum and dielectric materials whilst minimizing local dishing and erosion effects in CMP. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., copper CMP).