Robin L Teitzel from 9385 Murlea Ln, Portland, OR 97229, age 72, Phone: (503)2926116

Real-Time Prediction Of Proximity Resist Heating And Correction Of Raster Scan Electron Beam Lithography
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US Patent:

6373071, Apr 16, 2002
Filed:

Jun 30, 1999
Appl. No.:

09/343960
Inventors:

Robert Innes - Richmond CA
Sergey Babin - Castro Valley CA
Robin Teitzel - Portland OR
Lee Veneklasen - Castro Valley CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

G03C 502
US Classification:

25049222, 700121, 430296, 430 30
Abstract:

The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A shifted impulse response function is shown to give proximity heating results accurate to within a few percent. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds.

Real-Time Prediction Of And Correction Of Proximity Resist Heating In Raster Scan Particle Beam Lithography
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US Patent:

6720565, Apr 13, 2004
Filed:

Oct 26, 2001
Appl. No.:

10/057324
Inventors:

Robert Innes - The Sea Ranch CA
Sergey Babin - Castro Valley CA
Robin Teitzel - Portland OR
Lee Veneklasen - late of Castro Valley CA
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

G21K 510
US Classification:

25049222, 430 30, 430942
Abstract:

The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.

Area Based Optical Proximity Correction In Raster Scan Printing
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US Patent:

7407252, Aug 5, 2008
Filed:

Jul 1, 2004
Appl. No.:

10/883210
Inventors:

Thomas E. Chabreck - Tigard OR, US
Samuel C. Howells - Portland OR, US
John J. Hubbard - Lake Oswego OR, US
Robin L. Teitzel - Portland OR, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

B41J 29/393
G03F 1/46
US Classification:

347 19, 347 24, 358 19, 382167
Abstract:

Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via lithography are provided. Such defects are compensated for “post-rasterization” by manipulating the grayscale values of pixel maps.

Optical Proximity Correction In Raster Scan Printing Based On Corner Matching Templates
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US Patent:

7529421, May 5, 2009
Filed:

Jul 1, 2004
Appl. No.:

10/882959
Inventors:

Robert J. Beauchaine - Gaston OR, US
Thomas E. Chabreck - Tigard OR, US
Samuel C. Howells - Portland OR, US
John J. Hubbard - Lake Oswego OR, US
Asher Klatchko - Portland OR, US
Peter Pirogovsky - Portland OR, US
Robin L. Teitzel - Portland OR, US
Assignee:

Applied Materials, Inc. - Santa Clara CA
International Classification:

G06K 9/00
G06K 9/46
G06K 9/62
US Classification:

382254, 382141, 382145, 382181, 382203, 382209
Abstract:

Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via lithography are provided. Such defects are compensated for “post-rasterization” by manipulating the grayscale values of pixel maps.

Area Based Optical Proximity Correction In Raster Scan Printing
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US Patent:

20090037868, Feb 5, 2009
Filed:

Jul 22, 2008
Appl. No.:

12/177577
Inventors:

Thomas E. Chabreck - Tigard OR, US
Samuel C. Howells - Portland OR, US
John J. Hubbard - Lake Oswego OR, US
Robin L. Teitzel - Portland OR, US
International Classification:

G06F 17/50
US Classification:

716 20
Abstract:

Methods and apparatus for correcting defects, such as rounded corners and line end shortening, in patterns formed via lithography are provided. Such defects are compensated for “post-rasterization” by manipulating the grayscale values of pixel maps.

Stabilized High Brightness Led Suitable As Calibration Standard
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US Patent:

20110279036, Nov 17, 2011
Filed:

May 14, 2010
Appl. No.:

12/780652
Inventors:

Andrew Julius Muray - Portland OR, US
Robin Lynn Teitzel - Portland OR, US
International Classification:

H05B 37/02
US Classification:

315112
Abstract:

A high brightness LED () is precisely controlled. The temperature of the LED () is controlled via controlled thermal resistance (), measurement of the base temperature () and careful power monitoring of the LED ().

Rasterizer For Pattern Generator
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US Patent:

48069213, Feb 21, 1989
Filed:

Oct 4, 1985
Appl. No.:

6/784856
Inventors:

Allan L. Goodman - Hillsboro OR
Morris H. Green - Milwauki OR
Matthew J. Jolley - Hillsboro OR
Robin L. Teitzel - Portland OR
John L. Wipfli - Hillsboro OR
Assignee:

ATEQ Corporation - Beaverton OR
International Classification:

G09G 116
US Classification:

340747
Abstract:

A rasterizer, particularly suited for generating patterns for semiconductor masks and the like is described. An 8. times. 8 array uses RAS, CAS and WE signals in addition to the memory address for accessing the array. A state machine is used to convert the pattern data (e. g. , type of object orientation, etc. ) into accessing data with the WE generator being driven through a ROM.

Scanning Laser Lithography System Alignment Apparatus
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US Patent:

53273389, Jul 5, 1994
Filed:

Nov 9, 1992
Appl. No.:

7/973567
Inventors:

Paul Allen - Beaverton OR
Mike Bohan - Beaverton OR
Tim Thomas - Beaverton OR
Robin Teitzel - Portland OR
Assignee:

ETEC Systems, Inc. - Beaverton OR
International Classification:

B41J 2435
US Classification:

346108
Abstract:

A direct-write lithography tool having improved alignment characteristics. The present invention discloses use of an optical alignment apparatus in a multi-beam lithography system. The optical alignment apparatus provides for alignment through a reduction lens utilized by the multi-beam lithography system for writing to semiconductor wafers and the like through use of optics for correction of distortion and curvature caused by viewing with a radiant energy beam of a different wavelength than the beams used for writing. Further, the alignment optics provide for multiple paths in a single optics system through use of liquid crystal retarders and beam splitters to direct the radiant energy beam through a selected optical path. In the present invention, a first optical path may provide for high magnification and a second for low magnification. Further, other optical paths may provide for bright or dark field illumination and viewing.