Roger M Hawk

US Patent:

7173179, Feb 6, 2007

Filed:

Jul 16, 2002

Appl. No.:

10/195932

Inventors:

Stephen Adolph Nicoletti - Little Rock AR, US
Roger M. Hawk - Little Rock AR, US

Assignee:

The Board of Trustees of the University of Arkansas - Little Rock AR

International Classification:

H01L 31/052
H01L 31/04

US Classification:

136246, 136259, 136253, 136247, 136291, 136248, 136256, 257432, 257433, 257434, 257436, 257437

Abstract:

A solar co-generator for producing both heat energy and electricity is disclosed. A solar concentrator directs sunlight into a container lined with solar cells and filled with a thermal transfer fluid. The fluid is transparent with respect to certain wavelengths of light that may be converted to electricity by the solar cell, but is opaque with respect to longer wavelengths, particular the infrared band. The infrared portion of the sunlight heats the thermal transfer fluid, which then transfer that heat through a storage facility using a heat exchange mechanism. The thermal transfer fluid increases the efficiency of photovoltaic generation by preventing heating of the solar cells due to infrared radiation. The thermal transfer fluid may be a mixture containing barium sulfate and a suspension of zinc sulfide phosphors. A fluorescing anti-reflective coating may be applied to the solar cells to further increase efficiency.

US Patent:

50752570, Dec 24, 1991

Filed:

Nov 9, 1990

Appl. No.:

7/611428

Inventors:

Roger M. Hawk - Conway AR
Kamesh V. Gadepally - Little Rock AR

Assignee:

The Board of Trustees of the University of Arkansas - Little Rock AR

International Classification:

H01L 21302

US Classification:

437225

Abstract:

A novel method for the deposition of silicon and the formation of silicon films. More specifically, the process provides an aerosol generating technique, wherein silicon powder of optimum particle size is aerosolized, charged, and then electrostatically deposited onto high melting point substrates, which may include semiconducting, insulating, and conducting materials such as silicon, sapphire, and molybdenum, respectively. The powder coated substrates are subsequently heat treated at optimum times and temperatures, resulting in the formation of polycrystalline silicon films.

US Patent:

40669483, Jan 3, 1978

Filed:

Nov 20, 1975

Appl. No.:

5/633954

Inventors:

Roger M. Hawk - Mentor OH
Thomas A. Mitchell - Painesville OH

Assignee:

Diamond Shamrock Corporation - Cleveland OH

International Classification:

G01N 2742

US Classification:

324 30R

Abstract:

An apparatus and process for measuring the percent concentration of an electrolyte in solution is disclosed. The apparatus includes a crystal oscillator generating a square wave and a wave shaper to transform the wave into a monochromatic sine wave which passes through a two stage temperature compensated first buffer amplifier. The sine wave passes between electrodes which project into the solution under investigation and generates an output. A second buffer amplifier operates on the A. C. component of the output from the solution and is operatively connected to a half wave rectifier. The output of the half wave rectifier is proportional to the percent caustic. A temperature control device is utilized to hold the solution at a constant temperature. An alternate embodiment utilizes two identical circuits with two different solutions. One circuit is used with a solution having a known concentration and one with an unknown concentration.

US Patent:

51731215, Dec 22, 1992

Filed:

Mar 27, 1991

Appl. No.:

7/675674

Inventors:

Roger M. Hawk - Conway AR
Kamesh V. Gadepally - Little Rock AR

Assignee:

The Board of Trustees of the University of Little Rock - Little Rock AR

International Classification:

B05B 5025
B05C 500

US Classification:

118629

Abstract:

A novel apparatus for the deposition of silicon and the formation of silicon films. More specifically, the process provides an aerosol generating technique, wherein silicon powder of optimum particle size is aerosolized, charged, and then electrostatically deposited onto high melting point substrates, which may include semiconducting, insulating, and conducting materials such as silicon, sapphire, and molybdenum, respectively. The powder coated substrates are subsequently heat treated at optimum times and temperatures, resulting in the formation of polycrystalline silicon films.