Ronald L. Cline - Albuquerque NM Bernardo De Oliveira Kastrup Pereira - Eindhoven, NL
Assignee:
Philips Electronics North America Corporation - New York NY
International Classification:
G11C 1604
US Classification:
36518504, 326 37
Abstract:
A programmable cell comprises an externally loadable electrically erasable (EE) transistor cell that is configured to be independent of the currently active state of the programmed cell. When all of the EE cells are loaded with a new configuration, the contents of all of the EE cells are loaded into the corresponding programmable cells, preferably within one clock cycle. Because the entirety of the programmable cells can be pre-loaded with the new configuration, the time to effect a reconfiguration is one clock cycle. Because an EE cell is significantly smaller than a conventional four to six transistor storage cell, the area required to implement this single-clock-cycle reconfiguration capability is substantially less than traditional dynamically reprogrammable memory configurations. In an alternative embodiment, multiple EE cells can be associated with each programmable cell, thereby allowing a multiple-configuration capability.
Very Fine Grain Field Programmable Gate Array Architecture And Circuitry
A very fine-grained gate array cell is provided that includes a two-input logic device and a cascade NAND gate with buffered output. The NAND gate accepts a cascade input from another cell, and the cascade output of the NAND gate is provided as a cascade input to the other cell to facilitate the efficient implementation of cross-coupled devices. Each cell contains integral routing paths that facilitate a âsea of cellsâ layout approach. To ease the routing task, the output of each gate array cell is pre-wired so as to facilitate a programmed interconnection to each logic input of adjacent cells, near-adjacent cells, and far cells, and the aforementioned cascade interconnection with adjacent upper and lower cells. This configuration allows adjacent and near-adjacent cells to be easily interconnected to form macro cells that conform to higher level functional blocks. The gate array does not contain explicit routing channels; routing is effected using the prewired routing that is integral with each gate array cell.
High-Speed, Low Current Level Shifter Circuits For Integrated Circuits Having Multiple Power Supplies
Andy T. Nguyen - San Jose CA, US Ronald L. Cline - Albuquerque NM, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
H03K 190175
US Classification:
326 68, 326 70, 326 83
Abstract:
Level shifter circuits that provide fast operation when changing state while generating little crowbar current. Various embodiments are presented that include some of the following features added to conventional level shifters: additional pull-down transistors coupled to each output node and gated by the associated input signal; additional pull-up transistors coupled to each output node or cross-coupled internal node and gated by the associated input signal; additional pull-up transistors coupled to the cross-coupled internal nodes and gated by the opposing output node; and additional pull-down transistors on the output nodes gated by a low voltage power high. Some of these additional transistors allow the input signal to operate more quickly on the output nodes, causing more rapid transitions on the output signals and reducing crowbar current. The pull-downs gated by the low voltage power high ensure that little or no crowbar current occurs during the power-up sequence.
Ping Zhang - Sunnyvale CA, US Ronald L. Cline - Albuquerque NM, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
H03K 5/08
US Classification:
327309
Abstract:
A selectively enabled clamp circuit for limiting voltage overshoot on an input/output (I/O) pin of an associated integrated circuit (IC) device includes a single discharge transistor and a select circuit. The single discharge transistor is connected between the I/O pin and ground potential, and the select circuit is coupled to the I/O pin and includes an input to receive an enable signal and an output coupled to a gate of the signal discharge transistor. For some embodiments, the select circuit includes a level shifter circuit and a voltage detection circuit.
Gubo Huang - Milpitas CA, US Andy T. Nguyen - San Jose CA, US Ronald L. Cline - Albuquerque NM, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
H03K 19/0175
US Classification:
326 83, 326 38
Abstract:
A programmable differential signaling system includes a programmable bias generator and a plurality of input/output modules. The programmable bias generator is operably coupled to generate a first global bias signal and a second global signal based on desired signal properties of one of a plurality of differential signaling conventions. The a plurality of input/output modules is operably coupled to convert between differential signaling and single ended signaling, wherein actual signal properties of the differential signaling are regulated based on the first and second global bias signals to substantially equal the desired signal properties.
Gubo Huang - Milpitas CA, US Andy T. Nguyen - San Jose CA, US Ronald L. Cline - Albuquerque NM, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
H03K 19/0175
US Classification:
326 83, 326 87
Abstract:
A programmable differential signaling system includes a programmable bias generator and a plurality of input/output modules. The programmable bias generator is operably coupled to generate a first global bias signal and a second global signal based on desired signal properties of one of a plurality of differential signaling conventions. The a plurality of input/output modules is operably coupled to convert between differential signaling and single ended signaling, wherein actual signal properties of the differential signaling are regulated based on the first and second global bias signals to substantially equal the desired signal properties.
Integrated Circuit With A Selectable Interconnect Circuit For Low Power Or High Performance Operation
Chin Hua Tan - Sembawang, SG Shankar Lakka - San Jose CA, US Ronald L. Cline - Tijeras NM, US James B. Anderson - Lubbock TX, US Wayne E. Wennekamp - Rio Rancho NM, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
H03K 19/173
US Classification:
326 41, 326 47, 326113
Abstract:
An integrated circuit, such as a field programmable gate array or other configurable logic device, has an interconnect circuit selectively configurable to operate in a high-speed mode or in a low-power mode. The interconnect circuit is operable from a higher voltage supply or a lower voltage supply to change operating modes without reconfiguring data paths.
Programmable Integrated Circuit With Voltage Domains
Tim Tuan - San Jose CA, US Ronald L. Cline - Tijeras NM, US Arifur Rahman - San Jose CA, US
Assignee:
Xilinx, Inc. - San Jose CA
International Classification:
H03K 19/173
US Classification:
326 38, 326 40, 326 68
Abstract:
A programmable integrated circuit having a plurality of individually controlled voltage domains. Each voltage domain includes logic circuitry powered by a respective power network. The voltage magnitude of each power network is independently selectable. Each of a plurality of level shifters couples a first and second one of the voltage domains, couples a first port of the logic circuitry of the first voltage domain to a second port of the logic circuitry of the second voltage domain, and shifts from a first signaling protocol of the first port to a second signaling protocol of the second port. The first signaling protocol is referenced to the voltage magnitude of the first voltage domain, and the second signaling protocol is referenced to the voltage magnitude of the second voltage domain. Means are disclosed for controlling the voltage magnitude of the respective power network of one or more of the voltage domains.
St. Joseph School Williamsport PA 1954-1958, Webster Elementary School Williamsport PA 1958-1961, Roosevelt Junior High School Williamsport PA 1961-1963, Stevens Junior High School Williamsport PA 1963-1964