Ronald Levi Miles

US Patent:

6839479, Jan 4, 2005

Filed:

May 29, 2002

Appl. No.:

10/160305

Inventors:

Josef Berger - Los Altos CA, US
Gregory Miller - Foster City CA, US
Ronald Miles - Menlo Park CA, US

Assignee:

Silicon Light Machines Corporation - Sunnyvale CA

International Classification:

G02B 626

US Classification:

385 16, 385 14, 385 30

Abstract:

An optical switch comprises a substrate, first and second optical waveguide, and first and second conducting elements. The first optical waveguide is coupled to the substrate. The first conducting element is coupled to the first optical waveguide. The second optical waveguide is coupled to the substrate. The second conducting element is coupled to the second optical waveguide. In operation, a first electrical bias applied between the first and second conducting elements causes the first optical waveguide to not optically couple to the second optical waveguide. Further in operation, a second electric bias applied between the first and second conducting elements causes the first optical waveguide to optically couple to the second optical waveguide.

US Patent:

6932957, Aug 23, 2005

Filed:

Jun 28, 2002

Appl. No.:

10/187330

Inventors:

Ronald O. Miles - Menlo Park CA, US
Ludwig L. Galambos - Menlo Park CA, US
Janos J. Lazar - Redwood City CA, US
Gabriel C. Risk - Burlingame CA, US
Alexei L. Alexandrovski - Los Gatos CA, US
Gregory D. Miller - Foster City CA, US
David Caudillo - Saratoga CA, US
Joseph M. McRae - San Jose CA, US
Gisele L. Foulon - Cupertino CA, US

Assignee:

Silicon Light Machines Corporation - Sunnyvale CA

International Classification:

C01G035/00
C01D015/00

US Classification:

4235948

Abstract:

In one embodiment, a ferroelectric material is processed by placing the material in an environment including metal vapor and heating the material to a temperature below the Curie temperature of the material. This allows the bulk conductivity of the ferroelectric material to be increased without substantially degrading its ferroelectric domain properties. In one embodiment, the ferroelectric material comprises lithium tantalate and the metal vapor comprises zinc.

US Patent:

7527755, May 5, 2009

Filed:

May 9, 2005

Appl. No.:

11/124857

Inventors:

Ronald O. Miles - Menlo Park CA, US
Ludwig L. Galambos - Menlo Park CA, US
Janos J. Lazar - Redwood City CA, US
Gabriel C. Risk - Burlingame CA, US
Alexei L. Alexandrovski - Los Gatos CA, US
Gregory D. Miller - Foster City CA, US
David Caudillo - Saratoga CA, US
Joseph M. McRae - San Jose CA, US
Gisele L. Foulon - Cupertino CA, US

Assignee:

Silicon Light Machines Corporation - San Jose CA

International Classification:

C01G 35/00

US Classification:

252584, 4235948, 228219, 117 3, 118724

Abstract:

In one embodiment, a ferroelectric material is processed by placing the material in an environment including metal vapor and heating the material to a temperature below the Curie temperature of the material. This allows the bulk conductivity of the ferroelectric material to be increased without substantially degrading its ferroelectric domain properties. In one embodiment, the ferroelectric material comprises lithium tantalate and the metal vapor comprises zinc.

US Patent:

7728697, Jun 1, 2010

Filed:

Mar 5, 2007

Appl. No.:

11/681948

Inventors:

Ronald O. Miles - Menlo Park CA, US
Ludwig Galambos - Menlo Park CA, US

Assignee:

MG Materials Corporation - Menlo Park CA

International Classification:

H03H 9/00

US Classification:

333193, 310311, 310313 A, 310313 B

Abstract:

According to some embodiments, a pre-poled, single-domain body of a ferroelectric crystalline material such as lithium tantalate or lithium niobate is electrically reduced by applying a voltage across the body in a non-oxidizing environment while the body is heated to a process temperature below its Curie temperature. The voltage generates an electric field along the polar axis of the body. Electrodes may be formed on the body surface by applying an acetate-based silver paint. Exemplary methods allow achieving electrical conductivity values of 10to 10Siemens/cm.

US Patent:

20040221810, Nov 11, 2004

Filed:

Jun 9, 2004

Appl. No.:

10/865101

Inventors:

Ronald Miles - Menlo Park CA, US
Ludwig Galambos - Menlo Park CA, US
Janos Lazar - Redwood City CA, US

International Classification:

A61M036/14
A61K051/00
C23C016/00

US Classification:

118/715000

Abstract:

In one embodiment, an apparatus for wafer processing comprises a boat and a shell. The shell may be configured to receive and enclose the boat, which in turn may be configured to receive a plurality of wafers. The shell may include a plurality of slots to allow vapor to escape out of the shell and away from the wafers during a temperature ramp down. The apparatus may be employed in a variety of wafer processing applications including in processes for increasing the bulk conductivity of ferroelectric materials, for example.

US Patent:

20040222273, Nov 11, 2004

Filed:

Jun 9, 2004

Appl. No.:

10/865092

Inventors:

Ludwig Galambos - Menlo Park CA, US
Joseph McRae - San Jose CA, US
Ronald Miles - Menlo Park CA, US

International Classification:

B23K031/02

US Classification:

228/219000

Abstract:

In one embodiment, a method of processing a ferroelectric material comprises enclosing the ferroelectric material and a metal source in a container, ramping up the temperature of the container, heating the container for a target amount of time at a temperature below a Curie temperature of the ferroelectric material, and then ramping down the temperature of the container. The target amount of time may be set to obtain a target conductivity. For example, the target amount of time may be about 25 hours or less.

US Patent:

20050201926, Sep 15, 2005

Filed:

May 9, 2005

Appl. No.:

11/124845

Inventors:

Ronald Miles - Menlo Park CA, US
Ludwig Galambos - Menlo Park CA, US
Janos Lazar - Redwood City CA, US
Gabriel Risk - Burlingame CA, US
Alexei Alexandrovski - Los Gatos CA, US
Gregory Miller - Foster City CA, US
David Caudillo - Saratoga CA, US
Joseph McRae - San Jose CA, US
Gisele Foulon - Cupertino CA, US

International Classification:

C01G033/00

US Classification:

423594800

Abstract:

In one embodiment, a ferroelectric material is processed by placing the material in an environment including metal vapor and heating the material to a temperature below the Curie temperature of the material. This allows the bulk conductivity of the ferroelectric material to be increased without substantially degrading its ferroelectric domain properties. In one embodiment, the ferroelectric material comprises lithium tantalate and the metal vapor comprises zinc.

US Patent:

20100233072, Sep 16, 2010

Filed:

May 24, 2010

Appl. No.:

12/786298

Inventors:

Ronald O. Miles - Menlo Park CA, US
Ludwig Galambos - Menlo Park CA, US

International Classification:

C01G 35/00

US Classification:

4235948

Abstract:

According to some embodiments, a pre-poled, single-domain body of a ferroelectric crystalline material such as lithium tantalate or lithium niobate is electrically reduced by applying a voltage across the body in a non-oxidizing environment while the body is heated to a process temperature below its Curie temperature. The voltage generates an electric field along the polar axis of the body. Electrodes may be formed on the body surface by applying an acetate-based silver paint. Exemplary methods allow achieving lithium tantalate electrical conductivity values of 10to 10Siemens/cm and average optical absorption values greater than 50% per 0.4 mm thickness at wavelengths of 300 nm and 460 nm.