Ruairidh MacCrimmon - Arlington MA, US Nicolaus J. Hofmeester - Danvers MA, US Steven P. Caliendo - Ashby MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
G01L 21/30
US Classification:
216 59, 216 2, 216 38, 216 58, 216 60, 216 66
Abstract:
A method and system of location specific processing on a substrate is described. The method comprises acquiring metrology data for a substrate, and computing correction data for adjusting a first region of the metrology data on the substrate. Thereafter, a first gas cluster ion beam (GCIB) for treating the high gradient regions is established, and the first GCIB is applied to the substrate according to the correction data. The method further comprises optionally acquiring second metrology data following the applying of the first GCIB, and computing second correction data for adjusting a second region of the metrology data, or the second metrology data, or both on the substrate. Thereafter, a second gas cluster ion beam (GCIB) for treating the second region is established, and the second GCIB is applied to the substrate according to the second correction data.
Method And System For Adjusting Beam Dimension For High-Gradient Location Specific Processing
Ruairidh MacCrimmon - Arlington MA, US Nicolaus J. Hofmeester - Danvers MA, US Steven P. Caliendo - Ashby MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
G01L 21/30
US Classification:
216 59, 216 2, 216 38, 216 58, 216 60, 216 66
Abstract:
A method and system of location specific processing on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB) according to a set of beam properties and measuring metrology data for a substrate. Thereafter, the method comprises determining at least one spatial gradient of the metrology data at one or more locations on the substrate and adjusting at least one beam property in the set of beam properties for the GCIB according to the determined at least one spatial gradient. Using the metrology data and the adjusted set of beam properties, correction data for the substrate is computed. Following the computing, the adjusted GCIB is applied to the substrate according to the correction data.
Gas Cluster Ion Beam Etching Process For Achieving Target Etch Process Metrics For Multiple Materials
A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.
Gas Cluster Ion Beam Etching Process For Si-Containing And Ge-Containing Materials
Yan Shao - Andover MA, US Martin D. Tabat - Nashua NH, US Christopher K. Olsen - Peabody MA, US Ruairidh MacCrimmon - Arlington MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/302
US Classification:
438738, 438709, 438719, 216 72
Abstract:
A method and system for performing gas cluster ion beam (GCIB) etch processing of Si-containing material and/or Ge-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.
Gas Cluster Ion Beam Etching Process For Metal-Containing Materials
Yan Shao - Andover MA, US Martin D. Tabat - Nashua NH, US Christopher K. Olsen - Peabody MA, US Ruairidh Maccrimmon - Arlington MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/302
US Classification:
438742, 438709, 438714, 438720, 216 66
Abstract:
A method and system for performing gas cluster ion beam (GCIB) etch processing of metal-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.
Methods And Apparatus For Assigning A Beam Intensity Profile To A Gas Cluster Ion Beam Used To Process Workpieces
Nicolaus J. Hofmeester - Danvers MA, US Steven P. Caliendo - Ashby MA, US Thomas G. Tetreault - Manchester NH, US Ruairidh MacCrimmon - Arlington MA, US
Assignee:
TOKYO ELECTRON LIMITED - Tokyo
International Classification:
H01J 27/00
US Classification:
250424, 250423 R
Abstract:
Embodiments of the invention describe methods and apparatus for assigning a beam intensity profile to a gas cluster ion beam and processing workpieces using a gas cluster ion beam. One embodiment includes generating a gas cluster ion beam in a gas cluster ion beam processing apparatus, collecting parametric data relating to the spatial intensity of the gas cluster ion beam, and generating a beam intensity profile describing the spatial intensity of the gas cluster ion beam by fitting a mathematical functional shape to the parametric data. Another embodiment describes a method for processing a workpiece using a gas cluster ion beam.
Gas Cluster Ion Beam Etching Process For Etching Si-Containing, Ge-Containing, And Metal-Containing Materials
TEL Epion Inc. - Billerica MA, US Christopher K. Olsen - Peabody MA, US Yan Shao - Andover MA, US Ruairidh MacCrimmon - Maynard MA, US Luis Fernandez - Leuven, BE
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/3065
US Classification:
438709
Abstract:
A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.
Gas Cluster Ion Beam Etching Process For Achieving Target Etch Process Metrics For Multiple Materials
Christopher K. Olsen - Peabody MA, US Yan Shao - Andover MA, US Ruairidh MacCrimmon - Arlington MA, US
Assignee:
TEL Epion Inc. - Billerica MA
International Classification:
H01L 21/306
US Classification:
438708
Abstract:
A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.