Ruixuan Gao

US Patent:

20170117147, Apr 27, 2017

Filed:

Jun 11, 2015

Appl. No.:

15/317997

Inventors:

- Cambridge MA, US
Max Nathan Mankin - Cambridge MA, US
Robert Day - Somerville MA, US
Ruixuan Gao - Cambridge MA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01L 21/02
H01L 29/06
H01L 29/04
H01L 21/311

Abstract:

The present invention generally relates to nanoscale wires, and to systems and methods of producing nanoscale wires. In some aspects, the present invention is generally related to facet-specific deposition on semiconductor surfaces. In one embodiment, a first surface of a nanoscale wire, or a semiconductor, is preferentially oxidized relative to a second surface, and material is preferentially deposited on the second surface relative to the first surface. For example, the nanoscale wire or semiconductor may be a silicon nanowire that is initially exposed to an etchant to remove silicon oxide, then exposed to an oxidant under conditions such that one facet or surface (e.g., a {113} facet) is oxidized more quickly than another facet or surface (e.g., a {111} facet). Material may then be deposited or immobilized on the less-oxidized facet relative to the more-oxidized facet. Other embodiments of the invention may be directed to articles made thereby, devices containing such nanoscale wires or semiconductors, kits involving such nanoscale wires or semiconductors, semiconductor surfaces, or the like.

US Patent:

20170081489, Mar 23, 2017

Filed:

Sep 9, 2016

Appl. No.:

15/261163

Inventors:

- Cambridge MA, US
Daniel Oran - Cambridge MA, US
Ruixuan Gao - Cambridge MA, US
Shoh Asano - Cambridge MA, US
Fei Chen - Cambridge MA, US
Paul W. Tillberg - Cambridge MA, US
Adam H. Marblestone - Medford MA, US
Edward S. Boyden - Chestnut Hill MA, US

International Classification:

C08J 7/12
C08J 7/02
B29C 35/08
C08J 3/075

Abstract:

The present invention enables three-dimensional nanofabrication by isotropic shrinking of patterned hydrogels. A hydrogel is first expanded, the rate of expansion being controlled by the concentration of the crosslinker. The hydrogel is then infused with a reactive group and patterned in three dimensions using a photon beam through a limited-diffraction microscope. Functional particles or materials are then deposited on the pattern. The hydrogel is then shrunk and cleaved from the pattern.

US Patent:

20170073841, Mar 16, 2017

Filed:

May 6, 2015

Appl. No.:

15/308951

Inventors:

- Cambridge MA, US
Robert Day - Somerville MA, US
Max Nathan Mankin - Cambridge MA, US
Ruixuan Gao - Cambridge MA, US
Thomas J. Kempa - Somerville MA, US

International Classification:

C30B 29/66
C23C 14/22
H01L 21/02
H01L 29/423
H01L 29/786
C30B 23/02
H01L 29/16
H01L 29/22
H01L 29/20
C30B 29/06
C30B 29/08
C30B 25/18
C23C 16/44
H01L 29/06

Abstract:

The present invention generally relates to nanoscale wires, and to methods of producing nanoscale wires. In some aspects, the nanoscale wires are nanowires comprising a core which is continuous and a shell which may be continuous or discontinuous, and/or may have regions having different cross-sectional areas. In some embodiments, the shell regions are produced by passing the shell material (or a precursor thereof) over a core nanoscale wire under conditions in which Plateau-Raleigh crystal growth occurs, which can lead to non-homogenous deposition of the shell material on different regions of the core. The core and the shell each independently may comprise semiconductors, and/or non-semiconductor materials such as semiconductor oxides, metals, polymers, or the like. Other embodiments are generally directed to systems and methods of making or using such nanoscale wires, devices containing such nanoscale wires, or the like.

US Patent:

20150351691, Dec 10, 2015

Filed:

Aug 21, 2013

Appl. No.:

14/423340

Inventors:

- Cambridge MA, US
Or A. Shemesh - Somerville MA, US
Ruixuan Gao - Cambridge MA, US

International Classification:

A61B 5/00
A61N 1/05
A61B 5/145
A61B 5/04
A61B 5/1473

Abstract:

The present invention generally relates to nanoscale wires and, in particular, to probes comprising nanoscale wires for use in determining electrical and/or chemical properties in a tissue or other material. For example, in certain embodiments, a probe comprising nanoscale wires may be inserted into an electrically-active tissue, such as the heart or the brain, and the nanoscale wires may be used to determine electrical properties of the tissue, e.g., action potentials or other electrical activity. In addition, in some embodiments, a nanoscale wire may be modified to determine chemical properties of a tissue. A probe comprising such nanoscale wires can be inserted into a tissue (not necessarily electrically active) to determine various properties, e.g., chemical or mechanical properties. In addition, in some embodiments, a probe is provided that can be used to stimulate tissues, e.g., by providing electrical stimuli via one or more nanoscale wires. Still other embodiments are generally directed to systems and methods of making, using, or promoting such probes, kits involving such probes, and the like.

US Patent:

20150137794, May 21, 2015

Filed:

May 2, 2013

Appl. No.:

14/396542

Inventors:

- Cambridge MA, US
Ruixuan Gao - Cambridge MA, US
Steffen Strehle - Ulm, DE
Xiaojie Duan - Somerville MA, US
Bozhi Tian - Chicago IL, US
Ping Xie - Needham MA, US
Quan Qing - Somerville MA, US

International Classification:

G01R 1/30
G01R 3/00
H01L 29/772
H01L 21/283
H01L 29/423
B82Y 99/00
B82Y 40/00
G01R 1/067
H01L 29/41

US Classification:

324149, 438682

Abstract:

The present invention generally relates to nanoscale wires for use in sensors and other applications. In various embodiments, a probe comprising a nanotube (or other nanoscale wire) is provided that can be directly inserted into a cell to determine a property of the cell, e.g., an electrical property. In some cases, only the tip of the nanoscale wire is inserted into the cell; this tip may be very small relative to the cell, allowing for very precise study. In some aspects, the tip of the probe is held by a holding member positioned on a substrate, e.g., at an angle, which makes it easier for the probe to be inserted into the cell. The nanoscale wire may also be connected to electrodes and/or form part of a transistor, such that a property of the nanoscale wire, and thus of the cell, may be determined. Such probes may also be useful for studying other samples besides cells. Other aspects of the invention are generally directed to methods of making or using such probes, kits involving such probes, devices involving such probes, or the like.

US Patent:

20140184196, Jul 3, 2014

Filed:

Jun 7, 2012

Appl. No.:

14/124816

Inventors:

- Cambridge MA, US
Xiaojie Duan - Somerville MA, US
Ruixuan Gao - Cambridge MA, US
Ping Xie - Needham MA, US
Xiaocheng Jiang - Cambridge MA, US

Assignee:

President and Fellows of Harvard College - Cambridge MA

International Classification:

H01L 51/05
G01R 1/02
H01L 51/00

US Classification:

324 92, 257 9, 438478

Abstract:

The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, and applications. Certain aspects of the present invention are generally directed to transistors such as field effect transistors, and other similar devices. In one set of embodiments, a field effect transistor is used where a nanoscale wire, for example, a silicon nanowire, acts as a transistor channel connecting a source electrode to a drain electrode. In some cases, a portion of the transistor channel is exposed to an environment that is to be determined, for example, the interior or cytosol of a cell. A nanotube or other suitable fluidic channel may be extended from the transistor channel into a suitable environment, such as a contained environment within a cell, so that the environment is in electrical communication with the transistor channel via the fluidic channel. In some embodiments, the rest of the transistor channel may be coated, e.g., so that the electrical properties of the transistor channel reflect the electrical behavior of the environment that the fluidic channel is in communication with. Other aspects of the invention are generally directed to methods of making such sensors, methods of using such sensors, kits involving such sensors, or the like.