Sam Gun Kim

US Patent:

7440091, Oct 21, 2008

Filed:

Oct 26, 2004

Appl. No.:

10/973116

Inventors:

William A. Bagley - Tokyo, JP
Paohuei Lee - San Jose CA, US
Kyung-Tae Kim - Suwon, KR
Sam-Kyung Kim - Kumi, KR
Toshio Kiyotake - Hyogo, JP
Sam Kim - Fremont CA, US
Takayuki Matsumoto - Santa Clara CA, US
Jonathan Erik Larson - East Palo Alto CA, US
Makoto Inagawa - Palo Alto CA, US
James Hoffman - San Jose CA, US
Billy C. Leung - Sunnyvale CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01N 21/00

US Classification:

3562372

Abstract:

An apparatus and method incorporating at least two sensors that detect the presence of substrate defects, such as breakage or misalignment, along the lengths of at least two parallel edges of a moving substrate. In one embodiment, an apparatus for detecting substrate defects includes a sensor arrangement including at least two sensors that continuously sense a substrate near at least two parallel edges of the substrate as the substrate passes the sensors. In another embodiment, an apparatus for detecting substrate defects includes a robot having a substrate support surface, and a sensor arrangement including at least two sensors that continuously sense a substrate near at least two parallel edges of the substrate during substrate transfer on the substrate support surface. In another embodiment, a method of continuously detecting substrate defects includes positioning at least two sensors to continuously sense a substrate near at least two parallel edges of the substrate as the substrate passes the sensors, and transmitting a signal from each of the at least two sensors to a controller that continuously monitors the signals from the at least two sensors to detect the presence of a substrate defect.

US Patent:

7834994, Nov 16, 2010

Filed:

Oct 21, 2008

Appl. No.:

12/255629

Inventors:

William A. Bagley - Tokyo, JP
Paohuei Lee - San Jose CA, US
Kyung-Tae Kim - Suwon, KR
Sam-Kyung Kim - Kumi, KR
Toshio Kiyotake - Hyogo, JP
Sam Kim - San Ramon CA, US
Takayuki Matsumoto - Santa Clara CA, US
Jonathan Erik Larson - East Palo Alto CA, US
Makoto Inagawa - Palo Alto CA, US
James Hoffman - San Jose CA, US
Billy C. Leung - Fremont CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01N 21/00

US Classification:

3562372

Abstract:

An apparatus and method incorporating at least two sensors that detect the presence of a substrate is provided. In one embodiment, a method for transferring a substrate in a processing system is described. The method includes positioning a substrate on an end effector in a first chamber, moving the substrate through an opening between the first chamber and a second chamber along a substrate travel path, and sensing opposing sides of the substrate travel path using at least two sensors positioned proximate to the opening, each of the at least two sensors defining a beam path that is directed through opposing edge regions of the substrate when at least a portion of an edge region traverses the beam path.

US Patent:

8430961, Apr 30, 2013

Filed:

Sep 5, 2008

Appl. No.:

12/205363

Inventors:

Beom Soo Park - San Jose CA, US
Young Jin Choi - Santa Clara CA, US
Robin L. Tiner - Santa Cruz CA, US
Sam H. Kim - San Ramon CA, US
Soo Young Choi - Fremont CA, US
John M. White - Hayward CA, US
Dong-Kil Yim - Seongnam-si, KR

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
H01L 21/306

US Classification:

118715, 15634531, 15634532

Abstract:

The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.

US Patent:

20070024714, Feb 1, 2007

Filed:

Jul 29, 2005

Appl. No.:

11/192943

Inventors:

Sam Kim - Brush Prairie WA, US
Larry Baker - Portland OR, US

International Classification:

H04N 5/225
H04N 9/04

US Classification:

348207990

Abstract:

Disclosed are digital cameras adapted to capturing whiteboard images, and methods. Embodiments of the cameras incorporate processing firmware to create clear whiteboard images from digital images. Embodiments may also include a specialized lens for correcting for perspective effects, an interface for connection to a computer network, and provisions to facilitate semi-permanent mounting. Embodiments may also omit features commonly found on conventional digital cameras, such as a viewfinder; a memory card slot; a wide range of focus and shutter speeds; and on-camera controls; such that the cost of the whiteboard camera is reduced and the camera is rendered unattractive to theft.

US Patent:

20110126405, Jun 2, 2011

Filed:

Sep 28, 2010

Appl. No.:

12/892892

Inventors:

Jonghoon Baek - San Jose CA, US
Beom Soo Park - San Jose CA, US
Sam Hyungsam Kim - San Ramon CA, US

International Classification:

H01R 43/00
H01L 21/02

US Classification:

29825, 15634534, 118723 E

Abstract:

An electrical ground () of an RF impedance matching network () is connected to a connection area () on the grounded chamber cover () of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (). Alternatively, an RF power supply () has an electrically grounded output () that is connected to a connection area () on the chamber cover having such offset. Alternatively, an RF transmission line () has an electrically grounded conductor () that is connected between a grounded output of an RF power supply and a connection area () on the chamber cover having such offset.

US Patent:

20110185972, Aug 4, 2011

Filed:

Jan 26, 2011

Appl. No.:

13/014113

Inventors:

Jonghoon Baek - San Jose CA, US
Sam H. Kim - San Ramon CA, US
Beom Soo Park - San Jose CA, US

Assignee:

APPLIED MATERIALS, INC. - SANTA CLARA CA

International Classification:

C23C 16/505
C23C 16/455

US Classification:

118723 R

Abstract:

Embodiments disclosed herein generally relate to a PECVD apparatus. When the RF power source is coupled to the electrode at multiple locations, the current and voltage may be different at the multiple locations. In order to ensure that both the current and voltage are substantially identical at the multiple locations, an RF bridge assembly may be coupled between the multiple locations at a location just before connection to the electrode. The RF bridge assembly substantially equalizes the voltage distribution and current distribution between multiple locations. Therefore, a substantially identical current and voltage is applied to the electrode at the multiple locations.

US Patent:

20130071581, Mar 21, 2013

Filed:

Sep 19, 2012

Appl. No.:

13/622955

Inventors:

Jonghoon Baek - San Jose CA, US
Sam H. Kim - San Ramon CA, US
Beom Soo Park - San Jose CA, US
John M. White - Hayward CA, US
Shinichi Kunita - San Jose CA, US
Hsiao-Lin Yang - San Jose CA, US

International Classification:

H05H 1/46

US Classification:

427569, 31511121

Abstract:

The present invention generally relates to a capacitively coupled plasma (CCP) processing chamber, a manner to reduce or prevent stray capacitance, and a manner to measure plasma conditions within the processing chamber. As CCP processing chambers increase in size, there is a tendency for stray capacitance to negatively impact the process. Additionally, RF ground straps may break. By increasing the spacing between the chamber backing plate and the chamber wall, stray capacitance may be minimized. Additionally, the plasma may be monitored by measuring the conditions of the plasma at the backing plate rather than at the match network. In so measuring, the plasma harmonic data may be analyzed to reveal plasma processing conditions within the chamber.