Samson F Berhane

US Patent:

6902872, Jun 7, 2005

Filed:

Jul 29, 2002

Appl. No.:

10/208163

Inventors:

Diane Lai - Corvallis OR, US
Samson Berhane - Corvallis OR, US
Barry C. Snyder - Bend OR, US
Ronald A. Hellekson - Eugene OR, US
Hubert Vander Plas - Palo Alto CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G03F007/00

US Classification:

430322, 430323, 430324, 430325, 347 54, 347 55, 216 27

Abstract:

A method of manufacturing a microelectronics device is provided, wherein the microelectronics device is formed on a substrate having a frontside and a backside. The method comprises forming a circuit element on the frontside of the substrate from a plurality of layers deposited on the frontside of the substrate, wherein the plurality of layers includes an intermediate electrical contact layer, and forming an interconnect structure after forming the electrical contact layer. The interconnect structure includes a contact pad formed on the backside of the substrate, and a through-substrate interconnect in electrical communication with the contact pad, wherein the through-substrate interconnect extends from the backside of the substrate to the electrical contact layer.

US Patent:

7025894, Apr 11, 2006

Filed:

Jul 16, 2003

Appl. No.:

10/620666

Inventors:

Ulrich E. Hess - Corvallis OR, US
Samson Berhane - Corvallis OR, US
Arjang Fartash - Corvallis OR, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

B41J 2/04

US Classification:

216 27, 216 41, 347 54, 347 65, 118718

Abstract:

Atomic layer deposition forms a cavitation layer of a print head.

US Patent:

7432582, Oct 7, 2008

Filed:

Dec 14, 2004

Appl. No.:

11/012603

Inventors:

Diane Lai - Corvallis OR, US
Samson Berhane - Corvallis OR, US
Barry C. Snyder - Bend OR, US
Ronald A. Hellekson - Eugene OR, US
Hubert Vander Plas - Palo Alto CA, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H01L 29/06

US Classification:

257626, 257758

Abstract:

A method of manufacturing a microelectronics device is provided, wherein the microelectronics device is formed on a substrate having a frontside and a backside. The method comprises forming a circuit element on the frontside of the substrate from a plurality of layers deposited on the frontside of the substrate, wherein the plurality of layers includes an intermediate electrical contact layer, and forming an interconnect structure after forming the electrical contact layer. The interconnect structure includes a contact pad formed on the backside of the substrate, and a through-substrate interconnect in electrical communication with the contact pad, wherein the through-substrate interconnect extends from the backside of the substrate to the electrical contact layer.

US Patent:

7517060, Apr 14, 2009

Filed:

Feb 2, 2006

Appl. No.:

11/345755

Inventors:

Ulrich E. Hess - Corvallis OR, US
Samson Berhane - Corvallis OR, US
Arjang Fartash - Corvallis OR, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

B41J 2/05

US Classification:

347 64, 347 63, 347 62, 347 61

Abstract:

A cavitation structure for a print head has a first dielectric layer overlying at least a first portion of a substrate. A second dielectric layer has a first portion overlying at least a second portion of the substrate and a second portion, different from the first portion of the second dielectric layer, overlying at least a portion of the first dielectric layer. A cavitation layer has a first portion in contact with the first dielectric layer and a second portion in lateral contact with the second portion of the second dielectric layer. A third dielectric layer is disposed on only the first portion of the second dielectric layer.

US Patent:

8333459, Dec 18, 2012

Filed:

Apr 29, 2008

Appl. No.:

12/933218

Inventors:

Rio Rivas - Corvallis OR, US
Jon A. Crabtree - San Diego CA, US
Eric L. Nikkel - Philomath OR, US
Siddhartha Bhowmik - Salem OR, US
Bradley D. Chung - Corvallis OR, US
Samson Berhane - Corvallis OR, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

B41J 2/135

US Classification:

347 45, 216 17, 216 27, 239288, 347 63, 427240, 427534, 427569, 428342

Abstract:

A printing device () including a substrate () having an aperture () extending therethrough, wherein the aperture includes a side wall and defines a liquid ink flow path, an ink firing chamber () fluidically connected to the aperture, and a coating positioned on the side wall of the aperture, the coating being impervious to etching by liquid ink, and wherein the coating is chosen from one of silicon dioxide, aluminum oxide, hafnium oxide and silicon nitride.

US Patent:

20040018712, Jan 29, 2004

Filed:

Jul 29, 2002

Appl. No.:

10/208363

Inventors:

Hubert Plas - Palo Alto CA, US
Barry Snyder - Bend OR, US
Ronald Hellekson - Eugene OR, US
Ronnie Yenchik - Blodgett OR, US
Diane Lai - Corvallis OR, US
Samson Berhane - Corvallis OR, US

International Classification:

H01L021/44

US Classification:

438/612000

Abstract:

A method of forming a through-substrate interconnect for a circuit element in a microelectronics device is provided. The device is formed on a substrate having a frontside and a backside, and includes a circuit element formed on the frontside of the substrate connected to a contact pad formed on the backside of the substrate by the through-substrate interconnect. The method includes forming a first interconnect structure extending into the substrate from the frontside of the substrate, at least partially forming the circuit element such that the circuit element is in electrical communication with the first interconnect structure, and forming a second interconnect structure extending into the substrate from the backside of the substrate after forming the first interconnect structure such that the second interconnect structure is in electrical communication with the first interconnect structure.

US Patent:

20050006339, Jan 13, 2005

Filed:

Jul 11, 2003

Appl. No.:

10/618049

Inventors:

Peter Mardilovich - Corvallis OR, US
Gregory Heman - Albany OR, US
David Punsalan - Eugene OR, US
Samson Berhane - Corvallis OR, US

International Classification:

B05D003/04
C23F001/00

US Classification:

216039000, 427099500, 427256000, 427443100, 427304000

Abstract:

Methods and systems for depositing metal patterns on a substrate are provided. Accordingly, an electroless active layer can be formed on a substrate. Ink-jet techniques can then be used to independently ink-jet at least two components of an electroless deposition composition onto a variety of substrates. A metal composition can be ink-jetted onto the electroless active layer. The metal composition can contain a metal salt and optional additives. A reducing agent composition can be ink-jetted either subsequent to or prior to ink-jetting of the metal composition to form an electroless composition on the substrate. The metal salt and reducing agent react to form a metal pattern which can be used in formation of electronic devices or other products. The described ink-jettable compositions are stable over a wide range of conditions and allow for wide latitude in inkjet formulations and choice of substrates.