Junjing Bao - Cedar Grove NJ, US Griselda Bonilla - Fishkill NY, US Samuel S. Choi - Beacon NY, US Ronald G. Filippi - Wappingers Falls NY, US Naftali Eliahu Lustig - Croton on Hudson NY, US Andrew H. Simon - Fishkill NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - ARMONK NY
International Classification:
H01L 23/525 H01L 21/768
US Classification:
257530, 438381, 257E23147, 257E21592
Abstract:
An electronic anti-fuse structure, the structure including an Mlevel comprising a first Mmetal and a second Mmetal, a dielectric layer located above the Mlevel, an Mlevel located above the dielectric layer; and a metallic element in the dielectric layer and positioned between the first Mmetal and the second Mmetal, wherein the metallic element is insulated from both the first Mmetal and the second Mmetal.
Selective Local Metal Cap Layer Formation For Improved Electromigration Behavior
- Armonk NY, US Junjing Bao - Cedar Grove NJ, US Griselda Bonilla - Fishkill NY, US Samuel S. Choi - Beacon NY, US James A. Culp - Newburgh NY, US Thomas W. Dyer - Pleasant Valley NY, US Ronald G. Filippi - Wappingers Falls NY, US Stephen E. Greco - Lagrangeville NY, US Naftali E. Lustig - Croton On Hudson NY, US Andrew H. Simon - Fishkill NY, US
International Classification:
H01L 21/768
Abstract:
A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.
Selective Local Metal Cap Layer Formation For Improved Electromigration Behavior
- Armonk NY, US Junjing Bao - Cedar Grove NJ, US Griselda Bonilla - Fishkill NY, US Samuel S. Choi - Beacon NY, US James A. Culp - Newburgh NY, US Thomas W. Dyer - Pleasant Valley NY, US Ronald G. Filippi - Wappingers Falls NY, US Stephen E. Greco - Lagrangeville NY, US Naftali E. Lustig - Croton On Hudson NY, US Andrew H. Simon - Fishkill NY, US
International Classification:
H01L 21/768
Abstract:
A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.
Selective Local Metal Cap Layer Formation For Improved Electromigration Behavior
- Armonk NY, US Junjing Bao - Cedar Grove NJ, US Griselda Bonilla - Fishkill NY, US Samuel S. Choi - Beacon NY, US James A. Culp - Newburgh NY, US Thomas W. Dyer - Pleasant Valley NY, US Ronald G. Filippi - Wappingers Falls NY, US Stephen E. Greco - Lagrangeville NY, US Naftali E. Lustig - Croton On Hudson NY, US Andrew H. Simon - Fishkill NY, US
International Classification:
H01L 23/532
Abstract:
A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.
Selective Local Metal Cap Layer Formation For Improved Electromigration Behavior
- Armonk NY, US Junjing Bao - Cedar Grove NJ, US Griselda Bonilla - Fishkill NY, US Samuel S. Choi - Beacon NY, US James A. Culp - Newburgh NY, US Thomas W. Dyer - Pleasant Valley NY, US Ronald G. Filippi - Wappingers Falls NY, US Stephen E. Greco - Lagrangeville NY, US Naftali E. Lustig - Croton on Hudson NY, US Andrew H. Simon - Fishkill NY, US
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
International Classification:
H01L 21/768 H01L 23/532
US Classification:
257751, 438643
Abstract:
A method of forming a wiring structure for an integrated circuit device includes forming one or more copper lines within an interlevel dielectric layer (ILD); masking selected regions of the one or more copper lines; selectively plating metal cap regions over exposed regions of the one or more copper lines; and forming a conformal insulator layer over the metal cap regions and uncapped regions of the one or more copper lines.
Bay Imaging Consultants Medical Group 2450 Ashby Ave, Berkeley, CA 94705 (925)2967150 (phone), (925)2967171 (fax)
Bay Imaging Consultants Medical GroupJohn Muir Imaging Of Brentwood 2400 Balfour Rd STE 100, Brentwood, CA 94513 (925)3088123 (phone), (925)9414065 (fax)
Bay Imaging Consultants Medical GroupBay Imaging Consultants 3901 Lone Tree Way, Antioch, CA 94509 (925)2967150 (phone), (925)2967170 (fax)
Education:
Medical School University of Pittsburgh School of Medicine Graduated: 1984
Languages:
English
Description:
Dr. Choi graduated from the University of Pittsburgh School of Medicine in 1984. He works in Berkeley, CA and 2 other locations and specializes in Diagnostic Radiology. Dr. Choi is affiliated with Alta Bates Summit Medical Center, John Muir Medical Center Concord and Sutter Delta Medical Center.
Carmen; Posted 2005-10-03T23:57:22Z; It's really amazing to meet Samuel in Friendster. I haven't thought I can meet a nice friend when we are at the different