Samuel D Wilson

US Patent:

6464790, Oct 15, 2002

Filed:

Mar 17, 2000

Appl. No.:

09/527341

Inventors:

Semyon Sherstinsky - San Francisco CA
Arnold Kholodenko - San Francisco CA
Calvin Augason - Los Altos CA
Samuel Wilson - Sunnyvale CA
Michael Phillips - Redwood Estates CA
Leonel Zuniga - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118715, 118500, 269 21

Abstract:

The present invention generally provides a support member adapted to provide vacuum chucking. In one aspect, a support member having an upper surface having an outer, raised portion defining an inner, recessed portion is provided. The inner recessed portion is in fluid communication with a vacuum supply. The support member may include a plurality of raised support portions having one or more recessed portions adjacent thereto, the raised support portions having equal heights above the recessed portions. The transition between the raised portions and the recessed portions is gradual and the orifices formed by the holes extending through the upper surface of the substrate support are rounded to eliminate sharp edges and rapid changes in height at the upper surface.

US Patent:

63197286, Nov 20, 2001

Filed:

Jun 5, 1998

Appl. No.:

9/092477

Inventors:

Mohan K. Bhan - Cupertino CA
Ling Chen - Sunnyvale CA
Bo Zheng - San Jose CA
Justin Jones - San Francisco CA
Seshadri Ganguli - Santa Clara CA
Timothy Levine - Santa Clara CA
Samuel Wilson - Sunnyvale CA
Mei Chang - Saratoga CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2144

US Classification:

436687

Abstract:

A method for reducing the resistivity of a copper layer on a wafer. A moisture containing seed layer of copper is formed over a layer of material on a wafer. The copper seed layer is treated by either heat or ions from a plasma to anneal out moisture thereby reducing its resistivity and improving its adhesion to the underlying layer. A moisture free copper layer is then deposited on top of the "clean" or treated copper seed layer.

US Patent:

61105309, Aug 29, 2000

Filed:

Jun 25, 1999

Appl. No.:

9/339970

Inventors:

Ling Chen - Sunnyvale CA
Seshadri Ganguli - Sunnyvale CA
Bo Zheng - San Jose CA
Samuel Wilson - Sunnyvale CA
Christophe Marcadal - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1618

US Classification:

427253

Abstract:

Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1. 0 to 5. 0 percent by weight of trimethylvinylsilane that is vaporized in a vaporizer, and passed into a chemical vapor deposition chamber. Separately up to about 2 percent by weight of the precursor blend of water vapor is added directly to the chamber.

US Patent:

57400091, Apr 14, 1998

Filed:

Nov 29, 1996

Appl. No.:

8/758531

Inventors:

Bryan Pu - San Jose CA
Hongching Shan - San Jose CA
Michael Welch - Livermore CA
Semyon Sherstinsky - San Francisco CA
Alfred Mak - Union City CA
Ling Chen - Sunnyvale CA
Sue Zhang - Milpitas CA
Leonel Arturo Zuniga - San Jose CA
Samuel C. Wilson - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H02N 1300

US Classification:

361234

Abstract:

Apparatus for retaining a wafer having improved wafer and chuck edge protection, contains an protection ring that circumscribes a pedestal and is biased to be in constant contact with the backside of the wafer. A biasing element uniformly biases the protection ring into contact with the circumferential edge of the wafer. The protection ring has an annular plan form that circumscribes an electrostatic chuck for retaining the wafer in a stationery position. Vertical travel of the ring is restricted by a hard stop that is formed by a portion of a focus ring which overhangs the protection ring. After a wafer is placed upon the chuck and the chucking force enabled, the chucking force easily overcomes the bias force upon the protection ring and the wafer rests upon the chuck support surface. The protection ring contacts the backside of the wafer to ensure that pedestal and electrostatic chuck are not exposed to the plasma and, when a silicon protection ring is used, the effective area of the wafer is extended beyond the physical dimensions of the wafer to facilitate a more uniform plasma distribution over the wafer.

US Patent:

20200411054, Dec 31, 2020

Filed:

Sep 10, 2020

Appl. No.:

17/017507

Inventors:

- San Mateo CA, US
Samuel Wilson - San Mateo CA, US

International Classification:

G11B 27/02
G06N 3/08
G11B 27/031

Abstract:

Feature information characterize features of video clips may be obtained. A given video clip may be selected as a segment of a video edit. Other video clips may be iteratively selected as other segments of the video edit based on the feature information of the video clips and recommended feature information of the segments. Recommended feature information of a particular segment may be obtained by processing feature information of a previously selected video clip through a trained recurrent neural network. Video edit information defining the video edit may be generated. The video edit may include the selected video clips as the segments of the video edit.