Samuel Leidy Wilson

US Patent:

53037278, Apr 19, 1994

Filed:

Dec 18, 1992

Appl. No.:

7/993264

Inventors:

Samuel L. Wilson - Newhall CA
Mario A. Rodriguez - Oxnard CA

Assignee:

HR Textron Inc. - Valencia CA

International Classification:

F15B 13043
F15B 13044

US Classification:

137 83

Abstract:

A deflector jet servovalve including a fluidic amplifier constructed utilizing a plurality of laminae stacked one upon the other and bonded together to form an integral laminated structure. The fluidic amplifier includes a fixed ejector and a pair of receivers disposed opposed the ejector with a movable deflector disposed between the ejector and the receivers to deflect a jet stream emanating from the ejector. Conduit means is also defined in the integral laminated structure to supply fluid under pressure to the ejector and to receive any differential fluid output therefrom.

US Patent:

63197286, Nov 20, 2001

Filed:

Jun 5, 1998

Appl. No.:

9/092477

Inventors:

Mohan K. Bhan - Cupertino CA
Ling Chen - Sunnyvale CA
Bo Zheng - San Jose CA
Justin Jones - San Francisco CA
Seshadri Ganguli - Santa Clara CA
Timothy Levine - Santa Clara CA
Samuel Wilson - Sunnyvale CA
Mei Chang - Saratoga CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2144

US Classification:

436687

Abstract:

A method for reducing the resistivity of a copper layer on a wafer. A moisture containing seed layer of copper is formed over a layer of material on a wafer. The copper seed layer is treated by either heat or ions from a plasma to anneal out moisture thereby reducing its resistivity and improving its adhesion to the underlying layer. A moisture free copper layer is then deposited on top of the "clean" or treated copper seed layer.

US Patent:

61105309, Aug 29, 2000

Filed:

Jun 25, 1999

Appl. No.:

9/339970

Inventors:

Ling Chen - Sunnyvale CA
Seshadri Ganguli - Sunnyvale CA
Bo Zheng - San Jose CA
Samuel Wilson - Sunnyvale CA
Christophe Marcadal - Santa Clara CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1618

US Classification:

427253

Abstract:

Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1. 0 to 5. 0 percent by weight of trimethylvinylsilane that is vaporized in a vaporizer, and passed into a chemical vapor deposition chamber. Separately up to about 2 percent by weight of the precursor blend of water vapor is added directly to the chamber.

US Patent:

57400091, Apr 14, 1998

Filed:

Nov 29, 1996

Appl. No.:

8/758531

Inventors:

Bryan Pu - San Jose CA
Hongching Shan - San Jose CA
Michael Welch - Livermore CA
Semyon Sherstinsky - San Francisco CA
Alfred Mak - Union City CA
Ling Chen - Sunnyvale CA
Sue Zhang - Milpitas CA
Leonel Arturo Zuniga - San Jose CA
Samuel C. Wilson - Sunnyvale CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H02N 1300

US Classification:

361234

Abstract:

Apparatus for retaining a wafer having improved wafer and chuck edge protection, contains an protection ring that circumscribes a pedestal and is biased to be in constant contact with the backside of the wafer. A biasing element uniformly biases the protection ring into contact with the circumferential edge of the wafer. The protection ring has an annular plan form that circumscribes an electrostatic chuck for retaining the wafer in a stationery position. Vertical travel of the ring is restricted by a hard stop that is formed by a portion of a focus ring which overhangs the protection ring. After a wafer is placed upon the chuck and the chucking force enabled, the chucking force easily overcomes the bias force upon the protection ring and the wafer rests upon the chuck support surface. The protection ring contacts the backside of the wafer to ensure that pedestal and electrostatic chuck are not exposed to the plasma and, when a silicon protection ring is used, the effective area of the wafer is extended beyond the physical dimensions of the wafer to facilitate a more uniform plasma distribution over the wafer.

US Patent:

50316532, Jul 16, 1991

Filed:

Jul 12, 1990

Appl. No.:

7/552737

Inventors:

Samuel L. Wilson - Newhall CA
Timothy C. Bryarly - Palmdale CA
Clyde E. Cobb - Lakeview Terrace CA

Assignee:

HR Textron Inc. - Valencia CA

International Classification:

G05D 1620

US Classification:

137 83

Abstract:

Pressure gain compensation for a single-stage servovalve of the jet pipe type. The pressure gain compensation is provided by a separate reciprocally mounted spool having a feedback wire connected between the spool and the ejector jet. The spool has a differential pressure applied across the ends thereof from the receptors disposed opposed the ejector jet. Movement of the spool applies a force feedback to the ejector jet which is proportional to the pressure differential across the receptors and is opposite the force applied to the ejector by the torque motor to thereby compensate for pressure gain.

US Patent:

20200411054, Dec 31, 2020

Filed:

Sep 10, 2020

Appl. No.:

17/017507

Inventors:

- San Mateo CA, US
Samuel Wilson - San Mateo CA, US

International Classification:

G11B 27/02
G06N 3/08
G11B 27/031

Abstract:

Feature information characterize features of video clips may be obtained. A given video clip may be selected as a segment of a video edit. Other video clips may be iteratively selected as other segments of the video edit based on the feature information of the video clips and recommended feature information of the segments. Recommended feature information of a particular segment may be obtained by processing feature information of a previously selected video clip through a trained recurrent neural network. Video edit information defining the video edit may be generated. The video edit may include the selected video clips as the segments of the video edit.